IT1161684B - Cmos ad alta tensione con ossidazione localizzata per anelli di guardia autoallineati e relativo processo di fabbricazione - Google Patents

Cmos ad alta tensione con ossidazione localizzata per anelli di guardia autoallineati e relativo processo di fabbricazione

Info

Publication number
IT1161684B
IT1161684B IT12700/78A IT1270078A IT1161684B IT 1161684 B IT1161684 B IT 1161684B IT 12700/78 A IT12700/78 A IT 12700/78A IT 1270078 A IT1270078 A IT 1270078A IT 1161684 B IT1161684 B IT 1161684B
Authority
IT
Italy
Prior art keywords
self
high voltage
manufacturing process
guard rings
voltage cmos
Prior art date
Application number
IT12700/78A
Other languages
English (en)
Italian (it)
Other versions
IT7812700A0 (it
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Publication of IT7812700A0 publication Critical patent/IT7812700A0/it
Application granted granted Critical
Publication of IT1161684B publication Critical patent/IT1161684B/it

Links

Classifications

    • H10P76/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W10/0127—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/07—Guard rings and cmos
IT12700/78A 1977-09-21 1978-07-07 Cmos ad alta tensione con ossidazione localizzata per anelli di guardia autoallineati e relativo processo di fabbricazione IT1161684B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/835,263 US4135955A (en) 1977-09-21 1977-09-21 Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation

Publications (2)

Publication Number Publication Date
IT7812700A0 IT7812700A0 (it) 1978-07-07
IT1161684B true IT1161684B (it) 1987-03-18

Family

ID=25269065

Family Applications (1)

Application Number Title Priority Date Filing Date
IT12700/78A IT1161684B (it) 1977-09-21 1978-07-07 Cmos ad alta tensione con ossidazione localizzata per anelli di guardia autoallineati e relativo processo di fabbricazione

Country Status (5)

Country Link
US (1) US4135955A (enExample)
DE (1) DE2816795A1 (enExample)
FR (1) FR2404300A1 (enExample)
GB (1) GB1581498A (enExample)
IT (1) IT1161684B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4295266A (en) * 1980-06-30 1981-10-20 Rca Corporation Method of manufacturing bulk CMOS integrated circuits
GB2084794B (en) * 1980-10-03 1984-07-25 Philips Electronic Associated Methods of manufacturing insulated gate field effect transistors
JPS5791553A (en) * 1980-11-29 1982-06-07 Toshiba Corp Semiconductor device
US4385947A (en) * 1981-07-29 1983-05-31 Harris Corporation Method for fabricating CMOS in P substrate with single guard ring using local oxidation
US4613885A (en) * 1982-02-01 1986-09-23 Texas Instruments Incorporated High-voltage CMOS process
US4435895A (en) * 1982-04-05 1984-03-13 Bell Telephone Laboratories, Incorporated Process for forming complementary integrated circuit devices
IT1210872B (it) * 1982-04-08 1989-09-29 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari in circuiti integrati ad alta densita' per tensioni elevate.
US4412375A (en) * 1982-06-10 1983-11-01 Intel Corporation Method for fabricating CMOS devices with guardband
US4480375A (en) * 1982-12-09 1984-11-06 International Business Machines Corporation Simple process for making complementary transistors
US4471523A (en) * 1983-05-02 1984-09-18 International Business Machines Corporation Self-aligned field implant for oxide-isolated CMOS FET
US4574467A (en) * 1983-08-31 1986-03-11 Solid State Scientific, Inc. N- well CMOS process on a P substrate with double field guard rings and a PMOS buried channel
US4517731A (en) * 1983-09-29 1985-05-21 Fairchild Camera & Instrument Corporation Double polysilicon process for fabricating CMOS integrated circuits
US4567640A (en) * 1984-05-22 1986-02-04 Data General Corporation Method of fabricating high density CMOS devices
US4600445A (en) * 1984-09-14 1986-07-15 International Business Machines Corporation Process for making self aligned field isolation regions in a semiconductor substrate
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
US4713329A (en) * 1985-07-22 1987-12-15 Data General Corporation Well mask for CMOS process
US4925806A (en) * 1988-03-17 1990-05-15 Northern Telecom Limited Method for making a doped well in a semiconductor substrate
TW328650B (en) * 1996-08-27 1998-03-21 United Microelectronics Corp The MOS device and its manufacturing method
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
RU2674415C1 (ru) * 2018-03-06 2018-12-07 Акционерное общество Научно-производственный центр "Электронные вычислительно-информационные системы" (АО НПЦ "ЭЛВИС") Радиационно-стойкая библиотека элементов на комплементарных металл-окисел-полупроводник транзисторах

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
US3888706A (en) * 1973-08-06 1975-06-10 Rca Corp Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure
US4027380A (en) * 1974-06-03 1977-06-07 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US3983620A (en) * 1975-05-08 1976-10-05 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process

Also Published As

Publication number Publication date
DE2816795C2 (enExample) 1989-10-05
FR2404300B1 (enExample) 1983-01-21
US4135955A (en) 1979-01-23
DE2816795A1 (de) 1979-04-05
GB1581498A (en) 1980-12-17
FR2404300A1 (fr) 1979-04-20
IT7812700A0 (it) 1978-07-07

Similar Documents

Publication Publication Date Title
IT1161684B (it) Cmos ad alta tensione con ossidazione localizzata per anelli di guardia autoallineati e relativo processo di fabbricazione
IT7830409A0 (it) Transistore bipolare e relativo processo di fabbricazione.
IT1086971B (it) Guanto di protezione e suo procedimento di fabbricazione
IT1063564B (it) Processo di fabbricazione di transistori ad effetto di campo e bipolari integrati
IT1099651B (it) Elastomeri termoplastici di polietere poliuretano e relativo procedimento di fabbricazione
IT1116194B (it) Neutralizzatore statico ad accoppiamento capacitivo con schermo di alta tensione
IT1115322B (it) Comparatore di tensione mos perfezionato
FI800162A7 (fi) Silikoni-kautsupohjaiset depot-valmisteet sekä niiden valmistusmenetelmä.
IT1192594B (it) Processo di deidrogenazione non-ossidativa
IT1091703B (it) Transistore di arseniuro di gallio ad effetto di campo ad alta potenza
BR8000171A (pt) Fita gravadora magnetica,e,processo de fabricacao de fita gravadora magnetica
IT1077452B (it) Processo per la fabbriczaione di isobutilene
BR7701944A (pt) Impulsor de rolos aperfeicoado e processo para sua fabricacao
IT8020206A0 (it) Comparatore di tensione.
IT7820770A0 (it) 3-aril-3-eteroarilftalidi e processo di loro preparazione.
BR7800944A (pt) Processo para fabricar 1,1,1,2-tetrafluor-etano
BR7804801A (pt) Isolador eletrico para tensoes media,alta e muito alta e processo de fabrico dos mesmos
BR7706416A (pt) Processo de ligacao de duas pecas e limpador de para brisas
IT7829955A0 (it) Perfezionamenti ai commutatori per alta tensione e relativi ad essi.
SE427377B (sv) Trycksjelvsforsorjande axialglidlager
IT1123638B (it) Elettrolizzatore ad alta tensione con perdite deboli
IT1077983B (it) Filato ad effetto e relativo procedimento di produzione
IT1145379B (it) Cleomicine e relativo procedimento di produzione
IT1145411B (it) Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura
BR7607811A (pt) Processo para oxidacao de cicloalcanos e aparelho para sua realizacao

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960729