IT1154298B - IMPROVEMENT IN MOS POWER TRANSISTORS - Google Patents

IMPROVEMENT IN MOS POWER TRANSISTORS

Info

Publication number
IT1154298B
IT1154298B IT47840/82A IT4784082A IT1154298B IT 1154298 B IT1154298 B IT 1154298B IT 47840/82 A IT47840/82 A IT 47840/82A IT 4784082 A IT4784082 A IT 4784082A IT 1154298 B IT1154298 B IT 1154298B
Authority
IT
Italy
Prior art keywords
improvement
power transistors
mos power
mos
transistors
Prior art date
Application number
IT47840/82A
Other languages
Italian (it)
Other versions
IT8247840A0 (en
Inventor
C T New Thorndike
Lewis E Terry
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8247840A0 publication Critical patent/IT8247840A0/en
Application granted granted Critical
Publication of IT1154298B publication Critical patent/IT1154298B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT47840/82A 1981-02-23 1982-02-22 IMPROVEMENT IN MOS POWER TRANSISTORS IT1154298B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23732381A 1981-02-23 1981-02-23

Publications (2)

Publication Number Publication Date
IT8247840A0 IT8247840A0 (en) 1982-02-22
IT1154298B true IT1154298B (en) 1987-01-21

Family

ID=22893251

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47840/82A IT1154298B (en) 1981-02-23 1982-02-22 IMPROVEMENT IN MOS POWER TRANSISTORS

Country Status (3)

Country Link
EP (1) EP0077337A1 (en)
IT (1) IT1154298B (en)
WO (1) WO1982002981A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
FR2537780A1 (en) * 1982-12-08 1984-06-15 Radiotechnique Compelec POWER MOS FET DEVICE WITH MULTICELLULAR FLAT STRUCTURE
JPS59167066A (en) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field effect transistor
US4798810A (en) * 1986-03-10 1989-01-17 Siliconix Incorporated Method for manufacturing a power MOS transistor
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US4956700A (en) * 1987-08-17 1990-09-11 Siliconix Incorporated Integrated circuit with high power, vertical output transistor capability
DE3851815T2 (en) * 1987-09-24 1995-05-24 Mitsubishi Electric Corp Field effect transistor and its manufacturing method.
JP2604777B2 (en) * 1988-01-18 1997-04-30 松下電工株式会社 Manufacturing method of double diffusion type field effect semiconductor device.
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
US5184201A (en) * 1989-06-07 1993-02-02 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Static induction transistor
JP2752184B2 (en) * 1989-09-11 1998-05-18 株式会社東芝 Power semiconductor device
JPH05160407A (en) * 1991-12-09 1993-06-25 Nippondenso Co Ltd Vertical insulating gate type semiconductor device and manufacture thereof
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
DE19608003C2 (en) * 1996-03-04 2001-11-29 Daimler Chrysler Ag Power field effect transistor and method for its production
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
WO2000062345A1 (en) * 1999-04-09 2000-10-19 Shindengen Electric Manufacturing Co., Ltd. High-voltage semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device
JPS54885A (en) * 1977-06-03 1979-01-06 Nec Corp Manufacture of field effect transistor
US4206469A (en) * 1978-09-15 1980-06-03 Westinghouse Electric Corp. Power metal-oxide-semiconductor-field-effect-transistor
JPS6041876B2 (en) * 1979-12-17 1985-09-19 株式会社日立製作所 Manufacturing method of insulated gate field effect transistor

Also Published As

Publication number Publication date
IT8247840A0 (en) 1982-02-22
WO1982002981A1 (en) 1982-09-02
EP0077337A1 (en) 1983-04-27

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