IT1153688B - Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto - Google Patents

Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto

Info

Publication number
IT1153688B
IT1153688B IT24911/82A IT2491182A IT1153688B IT 1153688 B IT1153688 B IT 1153688B IT 24911/82 A IT24911/82 A IT 24911/82A IT 2491182 A IT2491182 A IT 2491182A IT 1153688 B IT1153688 B IT 1153688B
Authority
IT
Italy
Prior art keywords
tetrode
semiconductive
procedure
producing
semiconductive tetrode
Prior art date
Application number
IT24911/82A
Other languages
English (en)
Italian (it)
Other versions
IT8224911A0 (it
IT8224911A1 (it
Inventor
Tibor Mohacsy
Mihaly Szuhar
Gyorgy Zimmer
Original Assignee
Mta Koezponti Fiz Kutato Intez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Koezponti Fiz Kutato Intez filed Critical Mta Koezponti Fiz Kutato Intez
Publication of IT8224911A0 publication Critical patent/IT8224911A0/it
Publication of IT8224911A1 publication Critical patent/IT8224911A1/it
Application granted granted Critical
Publication of IT1153688B publication Critical patent/IT1153688B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Mechanical Control Devices (AREA)
IT24911/82A 1981-12-23 1982-12-22 Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto IT1153688B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU813926A HU183760B (en) 1981-12-23 1981-12-23 Method and arrangement for shaping semiconductor tetrode

Publications (3)

Publication Number Publication Date
IT8224911A0 IT8224911A0 (it) 1982-12-22
IT8224911A1 IT8224911A1 (it) 1984-06-22
IT1153688B true IT1153688B (it) 1987-01-14

Family

ID=10966096

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24911/82A IT1153688B (it) 1981-12-23 1982-12-22 Procedimento per produrre un tetrodo semiconduttore e tetrodo semiconduttore con esso ottenuto

Country Status (5)

Country Link
EP (1) EP0096686A4 (fr)
JP (1) JPS58502175A (fr)
HU (1) HU183760B (fr)
IT (1) IT1153688B (fr)
WO (1) WO1983002369A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103169A (ja) * 1981-12-15 1983-06-20 Matsushita Electric Ind Co Ltd 半導体可変抵抗素子
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor
TWI427660B (zh) * 2011-06-16 2014-02-21 Univ Nat Ilan 高纏繞密度之四聯電極製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3445734A (en) * 1965-12-22 1969-05-20 Ibm Single diffused surface transistor and method of making same
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4097888A (en) * 1975-10-15 1978-06-27 Signetics Corporation High density collector-up structure

Also Published As

Publication number Publication date
WO1983002369A1 (fr) 1983-07-07
EP0096686A1 (fr) 1983-12-28
HU183760B (en) 1984-05-28
JPS58502175A (ja) 1983-12-15
IT8224911A0 (it) 1982-12-22
IT8224911A1 (it) 1984-06-22
EP0096686A4 (fr) 1985-12-11

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