IT1135846B - SEMI-CONDUCTOR DEVICE EQUIPPED WITH SIDE TRANSISTOR - Google Patents

SEMI-CONDUCTOR DEVICE EQUIPPED WITH SIDE TRANSISTOR

Info

Publication number
IT1135846B
IT1135846B IT8121781A IT2178181A IT1135846B IT 1135846 B IT1135846 B IT 1135846B IT 8121781 A IT8121781 A IT 8121781A IT 2178181 A IT2178181 A IT 2178181A IT 1135846 B IT1135846 B IT 1135846B
Authority
IT
Italy
Prior art keywords
semi
device equipped
side transistor
conductor device
conductor
Prior art date
Application number
IT8121781A
Other languages
Italian (it)
Other versions
IT8121781A0 (en
Inventor
Kunimitsu Tatsuaki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8121781A0 publication Critical patent/IT8121781A0/en
Application granted granted Critical
Publication of IT1135846B publication Critical patent/IT1135846B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
IT8121781A 1980-05-19 1981-05-18 SEMI-CONDUCTOR DEVICE EQUIPPED WITH SIDE TRANSISTOR IT1135846B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6538180A JPS56162864A (en) 1980-05-19 1980-05-19 Semiconductor device

Publications (2)

Publication Number Publication Date
IT8121781A0 IT8121781A0 (en) 1981-05-18
IT1135846B true IT1135846B (en) 1986-08-27

Family

ID=13285337

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8121781A IT1135846B (en) 1980-05-19 1981-05-18 SEMI-CONDUCTOR DEVICE EQUIPPED WITH SIDE TRANSISTOR

Country Status (4)

Country Link
JP (1) JPS56162864A (en)
DE (1) DE3119288A1 (en)
GB (1) GB2077491A (en)
IT (1) IT1135846B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153550U (en) * 1984-03-24 1985-10-12 三洋電機株式会社 Lateral transistor
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch
FR2592526B1 (en) * 1985-12-31 1988-10-14 Radiotechnique Compelec INTEGRATED CIRCUIT COMPRISING A LATERAL TRANSISTOR
JPH0727911B2 (en) * 1986-02-06 1995-03-29 日本電気株式会社 Wiring structure of lateral element
US4712126A (en) * 1986-03-17 1987-12-08 Rca Corporation Low resistance tunnel
JPS62298173A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS6312859U (en) * 1986-07-10 1988-01-27
US4924288A (en) * 1987-06-11 1990-05-08 Unitrode Corporation High current-gain PNP transistor
FR2625611B1 (en) * 1987-12-30 1990-05-04 Radiotechnique Compelec INTEGRATED CIRCUIT WITH LATERAL TRANSISTOR
JPH01235380A (en) * 1988-03-16 1989-09-20 Fujitsu Ltd Semiconductor integrated circuit device
JPH0271529A (en) * 1988-09-06 1990-03-12 Fuji Electric Co Ltd Horizontal type bipolar transistor
FR2687843A1 (en) * 1992-02-24 1993-08-27 Motorola Semiconducteurs PNP BIPOLAR LATERAL TRANSISTOR AND METHOD FOR MANUFACTURING SAME.
EP1953826A4 (en) * 2005-11-07 2009-07-08 Tsoy Bronya Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136562C (en) * 1963-10-24
JPS5025306B1 (en) * 1968-04-04 1975-08-22

Also Published As

Publication number Publication date
GB2077491A (en) 1981-12-16
IT8121781A0 (en) 1981-05-18
DE3119288A1 (en) 1982-06-09
JPS56162864A (en) 1981-12-15

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