GB2077491A - Lateral transistors - Google Patents
Lateral transistors Download PDFInfo
- Publication number
- GB2077491A GB2077491A GB8113205A GB8113205A GB2077491A GB 2077491 A GB2077491 A GB 2077491A GB 8113205 A GB8113205 A GB 8113205A GB 8113205 A GB8113205 A GB 8113205A GB 2077491 A GB2077491 A GB 2077491A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- collector
- region
- semiconductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 238000010276 construction Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The collector and collector contact of a lateral transistor surround the emitter region which is contacted by an electrode passing over the collector contact on an insulating layer. The lateral transistor may include a plurality of emitter regions 19 formed in a matrix in a semiconductor layer, a mesh- shaped collector region 20 enclosing each of the emitter regions, a first layer collector electrode 26 formed along the mesh-shaped collector region 20, and a second layer emitter electrode 30 overlying the mesh-shaped collector electrode and connecting the emitter regions in common. The collector electrode 26 thus contacts the collector region 20 all the way around each emitter region 19, so its collector saturation resistance is reduced. The transistor is effective especially as an audio power transistor. <IMAGE>
Description
SPECIFICATION
Lateral transistor semiconductor device
The present invention relates to a semiconductor device, and more particularly to the electrode structure of a lateral transistor.
Generally speaking, a lateral PNP transistor is constructed, as shown in Figures 1A and 1 B, such that a P±type collector 3 enclosing a P±type emitter 2 is formed on an N-type silicon substrate 1 acting as a base and such that aluminum electrodes C and E contacting with the respective regions are formed on a surface oxide film 4 such as an SiO2 film. In order to reduce the collector saturation resistance Rcs of such construction, that contact region 51 of the collector region 3, which opposes an emitter region 52, as shown in Figure 1A, has to be elongated as much as possible.However, since the collector electrode and the emitter electrode are placed in an identical plane in accordance with the prior art, it has been impossible to maximize the length of the collector contact facing the emitter by extending it to the portion where the wiring leading to the emitter electrode is provided. As a result, the lateral transistor according to the prior art has a problem that the collector saturation current is accordingly high. This particular problem will invite an undesirable result that the power dissipation of a monolithic type semiconductor integrated circuit for a power amplifier circuit is increased if a lateral PNP transistor having a high power is assembled in the semiconductor integrated circuit device.
According to the present invention there is provided a semiconductor device having a lateral transistor comprising:
an emitter semiconductor region of a second conductivity type formed in a semiconductor layer of a first conductivity type;
a collector semiconductor region of the second conductivity type formed in the semiconductor layer so as to enclose the emitter region;
a first insulating film extending over the main surface of the semiconductor layer and having an emitter contact hole through which the emitter region is exposed, and a collector contact hole, the collector contact hole enclosing the emitter contact hole and exposing a portion of the collector region which encloses the emitter region;
a collector electrode connecting with the exposed portion of the collector region in the collector contact hole and thereby enclosing the emitter region;;
a second insulating film over the collector electrode and including an emitter contact hole through which the emitter region is exposed; and
an emitter electrode formed on the second insulating film, in electrical contact with the emitter region through the emitter contact holes.
In a preferred embodiment, a mesh- or latticeshaped collector semiconductor region is formed to enclose a plurality of matrix-shaped emitter semiconductor regions. A mesh-shaped first layer collector electrode is formed along the mesh-shaped collector semiconductor region. This collector electrode is so formed as to completely enclose the plural emitter semiconductor regions. An emitter electrode is formed on an insulating film covering the collector electrode in a manner to cross the collector electrode. Thus, it is possible to provide a lateral transistor which has a low collector saturation resistance and a small occupation area.
The present invention will be more particularly described in the following with reference to the accompanying drawings, wherein:
Figures 1A and 15 are a top plan view showing a lateral transistor according to the prior art and a second taken along the line IB-IB of the top plan view, respectively;
Figures 2A and 2B are a top plan view showing a lateral transistor according to the present invention and a section along line IIB-IIB of the top plan view, respectively;
Figure 3 is a top plan view showing another lateral transistor according to the present invention;
Figure 4 is a section taken along line IV-IV of the top plan view shown in Figure 3;
Figure 5 is an equivalent circuit diagram of the lateral transistor shown in Figure 3; and
Figure 6 is a circuit diagram showing a semiconductor integrated circuit power amplifier in which the lateral transistor shown in Figure 3 is applied.
Figures 2A and 2B show a lateral PNP transistor according to one embodiment of the present invention. An N-type single crystalline silicon semiconductor layer 6 has formed in its surface by the diffusion technique both an emitter region 7, which is made of a P-type semiconductor region, and a collector region 8 which is made of another P-type semiconductor region enclosing the emitter region 7. An insulating film 9 made of silicon dioxide (SiO2) is formed on the surface of the semiconductor layer 6. That insulating film 9 is made to have a thickness of 0.8 Fm, for example. The insulating film 9 thus made is formed with an emitter contact hole 10 and a collector contact hole 11. Afirst layer aluminum emitter electrode 12 and a first layer aluminum collector electrode 13 are formed to fill up those emitter and collector contact holes 10 and 11.Those two electrodes provide ohmic contacts for the P-type regions 7 and 8, respectively. It should be especially noted that the collector electrode 13 encloses the emitter region 7 all over the periphery of the collector region.
A second layer insulating film 14 made of a polyimide resin or the like is formed to cover the emitter electrode 12 and the collector electrode 13.
That insulating film 14 is made to have a thickness of 1 ym, for example. On this second layer insulating film 14, there is formed a second layer aluminum electrode 15 which is electrically connected with the emitter electrode 12. The second layer emitter electrode 15 thus formed is led to the outside of the element forming region across the first layer collector electrode 13.
With the construction thus far described, the length of the contact portion of the collector electrode, which encloses the emitter region, can be maximized so that the collector saturation resistance Rcscanbereduced.
Figures 3 and 4 are a top plan view and a sectional view showing another embodiment of the lateral
PNP transistor according to the present invention.
This second embodiment is intended to provide a high power transistor. This transistor in turn provides a construction having a small occupation area such as is suitable for assembly in a semiconductor integrated circuit device. This construction is suitable for the push-pull output circuit of an audio power amplifier, for example. In Figures 3 and 4, reference numeral 16 indicates a silicon semiconductor body which is constructed of a P-type single crystalline silicon semiconductor substrate 17 and an N-type silicon epitaxial semiconductor layer 18 which is formed on that substrate 17. A plurality of
P±type semiconductor regions 19 are formed in a matrix shape in the surface of the N-type semiconductor layer 18. Those semiconductor regions 19 operate as an emitter.A P+4ype semiconductor region 20 operating as a collector is formed to enclose the plural emitter regions 19 which are arranged in the matrix shape. That semiconductor region 20 is so spaced from the emitter regions 19 as to determine a preset base width and is formed into such a mesh or lattice shape that it may be used as a common semiconductor region for the plural emitter regions 19. The regions 19 and 20 thus far described can be simultaneously formed by the well known diffusion technique.
An insulating film 21 such as a silicon oxide film is formed on the main surface of the semiconductor layer. That insulating film 21 is made to have a thickness of 0.8 cm, for example. A plurality of emitter contact holes 22 are formed on the plural emitter regions 19, respectively, by selectively removing the insulating film 21. Simultaneously with this, a mesh-shaped collector contact hole 23 is formed in the common collector region 20 by the selective removal. At the saame time, a base contact hole 24 is formed for the semiconductor layer 18, which operates as the base.
First layer emitter electrodes 25 are formed on the plural emitter regions 19, respectively. Those emitter electrodes 25 are made of aluminum, for example.
The respective emitter electrodes 25 ohmically contact with the emitter regions 19 in the emitter contact holes 22.
A mesh-shaped first layer collector electrode 26 made of aluminum is formed on the collector region 20. That collector electrode 26 ohmically contact with the collector region 20 in the lattice-shaped contact hole 23. As a result, the collector electrode 26 is formed to completely enclose the respective emitter regions 19.
A first layer base electrode 27 made of aluminum is formed on the semiconductor layer 18 operating at the base. That base electrode 27 also ohmically contacts with the semiconductor layer 18 in the base contact hole 24.
The emitter electrodes 25, the collector electrode 26 and the base electrode 27 can be simultaneously formed by forming the metal layer of aluminum all over the main surface of the semiconductor body 16 by the well known aluminum evaporation technique and by subsequently etching that metal film into the aforementioned preset pattern. The electrodes thus formed are made to have a thickness of 1 lim, for example.
A second layer insulating film 28 is formed to cover the respective first layer electrodes. That insulating film 28 is made of a polyimide resin and is made to have a thickness of 1 lim, for example. The second insulating film 28 thus made is formed with a plurality of contact holes 29, through which the first emitter electrodes 25 are exposed to the outside, and with a contact hole (not shown) through which the first layer collector electrode 26 is partially exposed to the outside. Moreover, that second layer insulting film 28 exposes the terminal portion B of the first layer base electrode 27 therethrough to the outside.
A second layer emitter electrode 30 made of aluminum is formed on the second layer insulating film 28. This emitter electrode 30 is electrically connected with the respective first layer emitter electrodes 25 in the contact holes 29. That second layer emitter electrode 30 is constructed of a plurality of branch portions 31, which commonly connect the first emitter electrodes 25 arranged in rows, and a common electrode portion 32 which extends across those plural branch portions 31.
A second layer collector electrode 33 made of aluminum is formed on the remaining portion of the surface of the second layer insulating film 28. That collector electrode 33 is electrically connected with the first layer collector electrode 26 through the contact hole (not shown) which is formed in the insulating film 28.
The second layer emitter and collector electrodes 30 and 33 can be simultaneously formed by the well known aluminum evaporation technique of forming a metal film of aluminum all over the second layer insulating film 28 and of subsequently patterning that metal film. Those emitter and collector electrodes are made to have a thickness of 1 lim, for example.
The terminal portion E of the emitter electrode 30, the terminal portion C of the collector electrode 33, and the terminal portion B of the base electrode 27 can be used as respective bonding pads for connections with external parts.
The equivalent circuit to the construction thus far described is shown in Figure 5. According to the aforementioned construction, the single collector electrode 26 completely encloses the plural emitter regions 19 so that the collector saturation resistor
Rcs of the PNP transistor can be reduced.
According to that construction, moreover, the collector semiconductor region 20 enclosing the respective emitter semiconductor regions 19 can be formed into either mesh or lattice shape so that the occupation area of the PNP transistor can be reduced.
According to that construction, still moreover, the second layer emitter leading electrode 30, which extends across the base semiconductor region 18 interposed between the emitter semiconductor regions 19 and the collector semiconductor region 20, is formed on the second layer insulating film 28 so that it is arranged at such a position as is sufficiently spaced from the surface of the base semiconductor region 18.As a result, the intensity of the electric field, which is imparted to the base semiconductor region 18 from the emitter electrode 30 extending across a portion of the base semiconductor region between the emitter regions and the collector region is made weaker than the conventional one shown in
Figures 1A and 1 B thereby to make it possible to prevent a parasitic channel or an inversion layer from being established in the base semiconductor region jut below that emitter electrode. This resultantly prevents the undesired leak current from flowing from the emitter to the collector of the lateral transistor.
The construction of the present invention, as has been described hereinbefore with reference to Figures 3 and 4, can attain such an excellent effect that the semiconductor integrated circuit device (IC) for an audio power circuit having no bootstrap circuit, as shown in Figure 6, can have its power increased by employing the construction of the present invention. More specifically, the portion shown within a chain-dotted line in Figure 6 is integrated in a single sheet of silicon semiconductor body by the semiconductor integrated circuit technique. Of this IC, especially a PNP transistor Q5 (as enclosed by a broken line in Figure 6) at the output stage employs a transistor having the construction thus far described.
Then, the collector saturation resistance Rcs of the aforementioned transistor Q5 is reduced so that the collector-emitter voltage VCE(sat) (i.e. the residual voltage) of the PNP transistor Q5 upon saturation can be accordingly reduced. As a result, the collectoremitter voltage upon saturation VcE(sat) (i.e. the residual voltage) of an NPN transistor Q4 in the final stage can be reduced so that the power can be increased. On the other hand, a lateral transistor having a small element area can be fabricated so that the integration density of the IC can be improved.
According to the embodiments thus far described, the collector saturation resistance Rcs in the case of the discrete PNP transistor can be reduced about 10% from that of the conventional value. On the other hand, the collector saturation resistance Rcs in the case of the lateral transistor having a plurality (about 50 pieces) of PNP regions connected in parallel can be reduced about 50% from that of the conventional value. Moreover, the element area of the latter case can be reduced about 10% from that of the conventional value.
The present invention should not be limited to the aforementioned embodiments but can have a variety of other modifications.
Claims (6)
1. A semiconductor device having a lateral transistor comprising:
an emitter semiconductor region of a second conductivity type formed in a semiconductor layer of a first conductivity type;
a collector semiconductor region of the second conductivity type formed in the semiconductor layer so as to enclose the emitter region;
a first insulating film extending over the main surface of the semiconductor layer and having an emitter contact hole through which the emitter region is exposed, and a collector contact hole, the collector contact hole enclosing the emitter contact hole and exposing a portion of the collector region which encloses the emitter region;
a collector electrode connecting with the exposed portion of the collector region in the collector contact hole and thereby enclosing the emitter region;;
a second insulating film over the collector electrode and including an emitter contact hole through which the emitter region is exposed; and
an emitter electrode formed on the second insulating film, in electrical contact with the emitter region through the emitter contact holes.
2. A semiconductor device according to claim 1 wherein there is a first emitter electrode contacting the emitter region in the emitter contact hole in the first insulating layer, and a second emitter electrode on the second insulating film and contacting the first emitter electrode.
3. A semiconductor device according to claim 1 or claim 2wherein:
a plurality of said emitter semiconductor regions of second conductivity type are formed in a matrix in the semiconductor layer of first conductivity type and located at a spacing from one another;
said collector semiconductor region of second conductivity type is formed in said semiconductor layer in a mesh or lattice shape which extends between adjacent emitter semiconductor regions and which is spaced from, while enclosing, the emitter semiconductor regions;;
the first insulating film extending over the main surface of said semiconductor layer includes both a plurality of emitter contact holes, through which the emitter regions are partially exposed, and a collector contact hole which is formed into such a mesh or lattice shape as exposes a portion of said meshshaped collector semiconductor region and as encloses said emitter contact holes;
the collector electrode is mesh or lattice-shaped and formed to extend over the first insulating film on said collector semiconductor region and connected with said collector semiconductor region in said mesh-shaped collector contact hole thereby to enclose the respective ones of the first-named emitter electrodes; ;
the second insulating film extending over said collector electrode includes a plurality of emitter contact holes through which the emitter electrodes are electrically connected to the emitter regions.
4. A semiconductor device according to claim 3, wherein the emitter electrode on the second insulating film includes a plurality of branch portions electrically connecting the emitter regions in common, the branch portions being located in respective rows; and a common connecting portion extending across and electrically connected with said branch portions.
5. A semiconductor device according to anyone of the preceding claims, wherein the second insulating film is made of a polyimide resin.
6. A semiconductor device having a lateral transistor which is substantially as any described herein with reference to Figures 2 to 6 of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6538180A JPS56162864A (en) | 1980-05-19 | 1980-05-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2077491A true GB2077491A (en) | 1981-12-16 |
Family
ID=13285337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8113205A Withdrawn GB2077491A (en) | 1980-05-19 | 1981-04-29 | Lateral transistors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS56162864A (en) |
| DE (1) | DE3119288A1 (en) |
| GB (1) | GB2077491A (en) |
| IT (1) | IT1135846B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0186140A1 (en) * | 1984-12-27 | 1986-07-02 | Siemens Aktiengesellschaft | Semiconductor power switch |
| FR2592526A1 (en) * | 1985-12-31 | 1987-07-03 | Radiotechnique Compelec | Integrated circuit containing a lateral transistor |
| US4712126A (en) * | 1986-03-17 | 1987-12-08 | Rca Corporation | Low resistance tunnel |
| EP0322962A1 (en) * | 1987-12-30 | 1989-07-05 | Philips Composants | Integrated circuit having a lateral transistor |
| EP0557705A2 (en) * | 1992-02-24 | 1993-09-01 | Motorola Semiconducteurs S.A. | Fabrication of lateral bipolar transistor |
| EP1953826A1 (en) * | 2005-11-07 | 2008-08-06 | Tsoy, Bronya | Semiconductor device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153550U (en) * | 1984-03-24 | 1985-10-12 | 三洋電機株式会社 | Lateral transistor |
| JPH0727911B2 (en) * | 1986-02-06 | 1995-03-29 | 日本電気株式会社 | Wiring structure of lateral element |
| JPS62298173A (en) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | Transistor |
| JPS6312859U (en) * | 1986-07-10 | 1988-01-27 | ||
| US4924288A (en) * | 1987-06-11 | 1990-05-08 | Unitrode Corporation | High current-gain PNP transistor |
| JPH01235380A (en) * | 1988-03-16 | 1989-09-20 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPH0271529A (en) * | 1988-09-06 | 1990-03-12 | Fuji Electric Co Ltd | Horizontal type bipolar transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL136562C (en) * | 1963-10-24 | |||
| JPS5025306B1 (en) * | 1968-04-04 | 1975-08-22 |
-
1980
- 1980-05-19 JP JP6538180A patent/JPS56162864A/en active Pending
-
1981
- 1981-04-29 GB GB8113205A patent/GB2077491A/en not_active Withdrawn
- 1981-05-14 DE DE19813119288 patent/DE3119288A1/en not_active Withdrawn
- 1981-05-18 IT IT8121781A patent/IT1135846B/en active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0186140A1 (en) * | 1984-12-27 | 1986-07-02 | Siemens Aktiengesellschaft | Semiconductor power switch |
| US4792839A (en) * | 1984-12-27 | 1988-12-20 | Siemens Aktiengesellschaft | Semiconductor power circuit breaker structure obviating secondary breakdown |
| FR2592526A1 (en) * | 1985-12-31 | 1987-07-03 | Radiotechnique Compelec | Integrated circuit containing a lateral transistor |
| US4712126A (en) * | 1986-03-17 | 1987-12-08 | Rca Corporation | Low resistance tunnel |
| EP0322962A1 (en) * | 1987-12-30 | 1989-07-05 | Philips Composants | Integrated circuit having a lateral transistor |
| FR2625611A1 (en) * | 1987-12-30 | 1989-07-07 | Radiotechnique Compelec | INTEGRATED CIRCUIT HAVING A LATERAL TRANSISTOR |
| EP0557705A2 (en) * | 1992-02-24 | 1993-09-01 | Motorola Semiconducteurs S.A. | Fabrication of lateral bipolar transistor |
| EP0557705A3 (en) * | 1992-02-24 | 1997-07-09 | Motorola Semiconducteurs | Fabrication of lateral bipolar transistor |
| EP1953826A1 (en) * | 2005-11-07 | 2008-08-06 | Tsoy, Bronya | Semiconductor device |
| EP1953826A4 (en) * | 2005-11-07 | 2009-07-08 | Tsoy Bronya | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3119288A1 (en) | 1982-06-09 |
| IT1135846B (en) | 1986-08-27 |
| JPS56162864A (en) | 1981-12-15 |
| IT8121781A0 (en) | 1981-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |