IT1115654B - Partitore di tensione diffuso per circuito integrato monolitico - Google Patents

Partitore di tensione diffuso per circuito integrato monolitico

Info

Publication number
IT1115654B
IT1115654B IT23145/77A IT2314577A IT1115654B IT 1115654 B IT1115654 B IT 1115654B IT 23145/77 A IT23145/77 A IT 23145/77A IT 2314577 A IT2314577 A IT 2314577A IT 1115654 B IT1115654 B IT 1115654B
Authority
IT
Italy
Prior art keywords
integrated circuit
voltage divider
monolithic integrated
diffused
diffused voltage
Prior art date
Application number
IT23145/77A
Other languages
English (en)
Italian (it)
Inventor
Bruno Murari
Silvano Coccetti
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT23145/77A priority Critical patent/IT1115654B/it
Priority to FR7812629A priority patent/FR2390011B1/fr
Priority to DE19782819149 priority patent/DE2819149C3/de
Priority to US05/902,282 priority patent/US4181878A/en
Application granted granted Critical
Publication of IT1115654B publication Critical patent/IT1115654B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
IT23145/77A 1977-05-04 1977-05-04 Partitore di tensione diffuso per circuito integrato monolitico IT1115654B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT23145/77A IT1115654B (it) 1977-05-04 1977-05-04 Partitore di tensione diffuso per circuito integrato monolitico
FR7812629A FR2390011B1 (enExample) 1977-05-04 1978-04-28
DE19782819149 DE2819149C3 (de) 1977-05-04 1978-05-02 Monolithisch integrierte Spannungsteilerschaltung
US05/902,282 US4181878A (en) 1977-05-04 1978-05-03 Integrated-circuit chip with voltage divider

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23145/77A IT1115654B (it) 1977-05-04 1977-05-04 Partitore di tensione diffuso per circuito integrato monolitico

Publications (1)

Publication Number Publication Date
IT1115654B true IT1115654B (it) 1986-02-03

Family

ID=11204252

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23145/77A IT1115654B (it) 1977-05-04 1977-05-04 Partitore di tensione diffuso per circuito integrato monolitico

Country Status (3)

Country Link
US (1) US4181878A (enExample)
FR (1) FR2390011B1 (enExample)
IT (1) IT1115654B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1096633B (it) * 1978-06-13 1985-08-26 Ates Componenti Elettron Resistore diffuso in un corpo semiconduttore
US4219797A (en) * 1979-03-19 1980-08-26 National Semiconductor Corporation Integrated circuit resistance ladder having curvilinear connecting segments
JPS57100755A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Semiconductor device
US4447747A (en) * 1981-03-02 1984-05-08 Gte Laboratories Incorporated Waveform generating apparatus
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
US4649417A (en) * 1983-09-22 1987-03-10 International Business Machines Corporation Multiple voltage integrated circuit packaging substrate
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
US4839633A (en) * 1987-06-24 1989-06-13 Texas Instruments Incorporated Asymmetric voltage monitor for series supplies
US4968901A (en) * 1989-05-16 1990-11-06 Burr-Brown Corporation Integrated circuit high frequency input attenuator circuit
JP3049843B2 (ja) * 1991-04-26 2000-06-05 株式会社デンソー 抵抗体電極構造の形成方法
US5506494A (en) * 1991-04-26 1996-04-09 Nippondenso Co., Ltd. Resistor circuit with reduced temperature coefficient of resistance
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
DE4217408C1 (de) * 1992-05-26 1993-11-25 Texas Instruments Deutschland Integrierter Spannungsteiler
US5339067A (en) * 1993-05-07 1994-08-16 Crystal Semiconductor Corporation Integrated voltage divider and circuit employing an integrated voltage divider
DE19601135C1 (de) * 1996-01-13 1997-05-28 Itt Ind Gmbh Deutsche Halbleiterstruktur
DE10213876C1 (de) * 2002-03-27 2003-10-02 Siemens Ag Anordnung zur Messung von Hochspannung
WO2003105229A2 (en) * 2002-06-11 2003-12-18 Koninklijke Philips Electronics N.V. Resistor network such as a resistor ladder network and a method for manufacturing such a resistor network
CN101427346B (zh) * 2006-04-21 2010-12-15 Nxp股份有限公司 电阻分压器电路中使用的可调电阻器及其制造方法
JP5072068B2 (ja) * 2006-12-25 2012-11-14 ルネサスエレクトロニクス株式会社 抵抗分割回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6907227A (enExample) * 1969-05-10 1970-11-12
US3890602A (en) 1972-10-25 1975-06-17 Nippon Musical Instruments Mfg Waveform producing device
JPS5220317B2 (enExample) * 1974-12-25 1977-06-02

Also Published As

Publication number Publication date
DE2819149A1 (de) 1978-11-09
FR2390011B1 (enExample) 1982-05-21
FR2390011A1 (enExample) 1978-12-01
DE2819149C2 (de) 1983-01-27
US4181878A (en) 1980-01-01

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960530