FR2390011B1 - - Google Patents
Info
- Publication number
- FR2390011B1 FR2390011B1 FR7812629A FR7812629A FR2390011B1 FR 2390011 B1 FR2390011 B1 FR 2390011B1 FR 7812629 A FR7812629 A FR 7812629A FR 7812629 A FR7812629 A FR 7812629A FR 2390011 B1 FR2390011 B1 FR 2390011B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/817—Combinations of field-effect devices and resistors only
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT23145/77A IT1115654B (it) | 1977-05-04 | 1977-05-04 | Partitore di tensione diffuso per circuito integrato monolitico |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2390011A1 FR2390011A1 (enExample) | 1978-12-01 |
| FR2390011B1 true FR2390011B1 (enExample) | 1982-05-21 |
Family
ID=11204252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7812629A Expired FR2390011B1 (enExample) | 1977-05-04 | 1978-04-28 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4181878A (enExample) |
| FR (1) | FR2390011B1 (enExample) |
| IT (1) | IT1115654B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1096633B (it) * | 1978-06-13 | 1985-08-26 | Ates Componenti Elettron | Resistore diffuso in un corpo semiconduttore |
| US4219797A (en) * | 1979-03-19 | 1980-08-26 | National Semiconductor Corporation | Integrated circuit resistance ladder having curvilinear connecting segments |
| JPS57100755A (en) * | 1980-12-15 | 1982-06-23 | Fujitsu Ltd | Semiconductor device |
| US4447747A (en) * | 1981-03-02 | 1984-05-08 | Gte Laboratories Incorporated | Waveform generating apparatus |
| EP0109996B1 (fr) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
| US4649417A (en) * | 1983-09-22 | 1987-03-10 | International Business Machines Corporation | Multiple voltage integrated circuit packaging substrate |
| FR2596922B1 (fr) * | 1986-04-04 | 1988-05-20 | Thomson Csf | Resistance integree sur un substrat semi-conducteur |
| US4839633A (en) * | 1987-06-24 | 1989-06-13 | Texas Instruments Incorporated | Asymmetric voltage monitor for series supplies |
| US4968901A (en) * | 1989-05-16 | 1990-11-06 | Burr-Brown Corporation | Integrated circuit high frequency input attenuator circuit |
| JP3049843B2 (ja) * | 1991-04-26 | 2000-06-05 | 株式会社デンソー | 抵抗体電極構造の形成方法 |
| US5506494A (en) * | 1991-04-26 | 1996-04-09 | Nippondenso Co., Ltd. | Resistor circuit with reduced temperature coefficient of resistance |
| US5268651A (en) * | 1991-09-23 | 1993-12-07 | Crystal Semiconductor Corporation | Low drift resistor structure |
| DE4217408C1 (de) * | 1992-05-26 | 1993-11-25 | Texas Instruments Deutschland | Integrierter Spannungsteiler |
| US5339067A (en) * | 1993-05-07 | 1994-08-16 | Crystal Semiconductor Corporation | Integrated voltage divider and circuit employing an integrated voltage divider |
| DE19601135C1 (de) * | 1996-01-13 | 1997-05-28 | Itt Ind Gmbh Deutsche | Halbleiterstruktur |
| DE10213876C1 (de) * | 2002-03-27 | 2003-10-02 | Siemens Ag | Anordnung zur Messung von Hochspannung |
| WO2003105229A2 (en) * | 2002-06-11 | 2003-12-18 | Koninklijke Philips Electronics N.V. | Resistor network such as a resistor ladder network and a method for manufacturing such a resistor network |
| CN101427346B (zh) * | 2006-04-21 | 2010-12-15 | Nxp股份有限公司 | 电阻分压器电路中使用的可调电阻器及其制造方法 |
| JP5072068B2 (ja) * | 2006-12-25 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 抵抗分割回路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6907227A (enExample) * | 1969-05-10 | 1970-11-12 | ||
| US3890602A (en) | 1972-10-25 | 1975-06-17 | Nippon Musical Instruments Mfg | Waveform producing device |
| JPS5220317B2 (enExample) * | 1974-12-25 | 1977-06-02 |
-
1977
- 1977-05-04 IT IT23145/77A patent/IT1115654B/it active
-
1978
- 1978-04-28 FR FR7812629A patent/FR2390011B1/fr not_active Expired
- 1978-05-03 US US05/902,282 patent/US4181878A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2819149A1 (de) | 1978-11-09 |
| FR2390011A1 (enExample) | 1978-12-01 |
| IT1115654B (it) | 1986-02-03 |
| DE2819149C2 (de) | 1983-01-27 |
| US4181878A (en) | 1980-01-01 |