IT1087981B - Metodo per la diffusione selettiva di alluminio. - Google Patents

Metodo per la diffusione selettiva di alluminio.

Info

Publication number
IT1087981B
IT1087981B IT29556/77A IT2955677A IT1087981B IT 1087981 B IT1087981 B IT 1087981B IT 29556/77 A IT29556/77 A IT 29556/77A IT 2955677 A IT2955677 A IT 2955677A IT 1087981 B IT1087981 B IT 1087981B
Authority
IT
Italy
Prior art keywords
aluminum diffusion
selective aluminum
selective
diffusion
aluminum
Prior art date
Application number
IT29556/77A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1087981B publication Critical patent/IT1087981B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/033Diffusion of aluminum
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thyristors (AREA)
IT29556/77A 1976-12-09 1977-11-10 Metodo per la diffusione selettiva di alluminio. IT1087981B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/749,179 US4050967A (en) 1976-12-09 1976-12-09 Method of selective aluminum diffusion

Publications (1)

Publication Number Publication Date
IT1087981B true IT1087981B (it) 1985-06-04

Family

ID=25012611

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29556/77A IT1087981B (it) 1976-12-09 1977-11-10 Metodo per la diffusione selettiva di alluminio.

Country Status (8)

Country Link
US (1) US4050967A (it)
JP (1) JPS5383576A (it)
BE (1) BE861642A (it)
DE (1) DE2753533A1 (it)
FR (1) FR2373877A1 (it)
IT (1) IT1087981B (it)
PL (1) PL202674A1 (it)
SE (1) SE7713183L (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
US4148133A (en) * 1978-05-08 1979-04-10 Sperry Rand Corporation Polysilicon mask for etching thick insulator
US4199386A (en) * 1978-11-28 1980-04-22 Rca Corporation Method of diffusing aluminum into monocrystalline silicon
JPS5824007B2 (ja) * 1979-07-16 1983-05-18 株式会社日立製作所 半導体装置の製造方法
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
CN104934305B (zh) * 2014-03-18 2017-11-03 西安永电电气有限责任公司 高压晶闸管及设计工艺方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
DE1644028A1 (de) * 1967-06-01 1971-03-25 Telefunken Patent Verfahren zum Eindiffundieren von Stoerstellen in einen begrenzten Bereich eines Halbleiterkoerpers
DE1806980A1 (de) * 1967-11-15 1969-06-19 Fairchild Camera Instr Co Halbleiter-Bauelement
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same
US3909926A (en) * 1973-11-07 1975-10-07 Jearld L Hutson Method of fabricating a semiconductor diode having high voltage characteristics
FR2270677B1 (it) * 1974-02-20 1978-12-01 Silec Semi Conducteurs
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
FR2280974A1 (fr) * 1974-08-01 1976-02-27 Silec Semi Conducteurs Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
US3997379A (en) * 1975-06-20 1976-12-14 Rca Corporation Diffusion of conductivity modifiers into a semiconductor body

Also Published As

Publication number Publication date
JPS5383576A (en) 1978-07-24
DE2753533A1 (de) 1978-06-15
US4050967A (en) 1977-09-27
PL202674A1 (pl) 1978-06-19
BE861642A (fr) 1978-03-31
FR2373877A1 (fr) 1978-07-07
SE7713183L (sv) 1978-06-10

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