IT1055195B - Transistore planare inverso - Google Patents

Transistore planare inverso

Info

Publication number
IT1055195B
IT1055195B IT20063/76A IT2006376A IT1055195B IT 1055195 B IT1055195 B IT 1055195B IT 20063/76 A IT20063/76 A IT 20063/76A IT 2006376 A IT2006376 A IT 2006376A IT 1055195 B IT1055195 B IT 1055195B
Authority
IT
Italy
Prior art keywords
planar transistor
reverse planar
reverse
transistor
planar
Prior art date
Application number
IT20063/76A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1055195B publication Critical patent/IT1055195B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47Schottky barrier electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7327Inverse vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT20063/76A 1975-02-19 1976-02-11 Transistore planare inverso IT1055195B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752507148 DE2507148A1 (de) 1975-02-19 1975-02-19 Inverser planartransistor

Publications (1)

Publication Number Publication Date
IT1055195B true IT1055195B (it) 1981-12-21

Family

ID=5939287

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20063/76A IT1055195B (it) 1975-02-19 1976-02-11 Transistore planare inverso

Country Status (5)

Country Link
JP (1) JPS51107778A (zh)
DE (1) DE2507148A1 (zh)
FR (1) FR2301924A1 (zh)
GB (1) GB1495864A (zh)
IT (1) IT1055195B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit
EP2180517A1 (en) * 2008-10-24 2010-04-28 Epcos Ag Pnp bipolar transistor with lateral collector and method of production

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
JPS4911659U (zh) * 1972-05-09 1974-01-31

Also Published As

Publication number Publication date
DE2507148A1 (de) 1976-09-02
FR2301924B1 (zh) 1982-04-23
JPS51107778A (zh) 1976-09-24
FR2301924A1 (fr) 1976-09-17
GB1495864A (en) 1977-12-21

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