IT1051481B - Disposizione circuitale per produrre una corrente compensata nei riguardi delle variazzoni di temperatura e di tensione di alimentazione - Google Patents

Disposizione circuitale per produrre una corrente compensata nei riguardi delle variazzoni di temperatura e di tensione di alimentazione

Info

Publication number
IT1051481B
IT1051481B IT70051/75A IT7005175A IT1051481B IT 1051481 B IT1051481 B IT 1051481B IT 70051/75 A IT70051/75 A IT 70051/75A IT 7005175 A IT7005175 A IT 7005175A IT 1051481 B IT1051481 B IT 1051481B
Authority
IT
Italy
Prior art keywords
circuitual
regard
variations
arrangement
produce
Prior art date
Application number
IT70051/75A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1051481B publication Critical patent/IT1051481B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
IT70051/75A 1974-12-14 1975-12-11 Disposizione circuitale per produrre una corrente compensata nei riguardi delle variazzoni di temperatura e di tensione di alimentazione IT1051481B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2459271A DE2459271C3 (de) 1974-12-14 1974-12-14 Schaltungsanordnung zum Erzeugen eines kompensierten Gleichstromes

Publications (1)

Publication Number Publication Date
IT1051481B true IT1051481B (it) 1981-04-21

Family

ID=5933458

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70051/75A IT1051481B (it) 1974-12-14 1975-12-11 Disposizione circuitale per produrre una corrente compensata nei riguardi delle variazzoni di temperatura e di tensione di alimentazione

Country Status (7)

Country Link
US (1) US4019121A (it)
JP (1) JPS5953563B2 (it)
CA (1) CA1032619A (it)
DE (1) DE2459271C3 (it)
FR (1) FR2294482A1 (it)
GB (1) GB1530805A (it)
IT (1) IT1051481B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL177858C (nl) * 1976-03-31 1985-12-02 Philips Nv Schakeling voor het leveren van een vooraf bepaalde stroom aan een belasting.
JPS607414B2 (ja) * 1976-10-28 1985-02-25 ソニー株式会社 ミュ−テイング回路
US4278946A (en) * 1979-06-28 1981-07-14 Rca Corporation Current scaling circuitry
US4280090A (en) * 1980-03-17 1981-07-21 Silicon General, Inc. Temperature compensated bipolar reference voltage circuit
US4354122A (en) * 1980-08-08 1982-10-12 Bell Telephone Laboratories, Incorporated Voltage to current converter
JPS6022862A (ja) * 1983-07-18 1985-02-05 Rohm Co Ltd 電源回路
US4835487A (en) * 1988-04-14 1989-05-30 Motorola, Inc. MOS voltage to current converter
US5977759A (en) * 1999-02-25 1999-11-02 Nortel Networks Corporation Current mirror circuits for variable supply voltages
US8970301B2 (en) * 2013-05-20 2015-03-03 Analog Devices, Inc. Method for low power low noise input bias current compensation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7210633A (it) * 1972-08-03 1974-02-05
NL7309767A (nl) * 1973-07-13 1975-01-15 Philips Nv Versterkerschakeling.
US3914684A (en) * 1973-10-05 1975-10-21 Rca Corp Current proportioning circuit

Also Published As

Publication number Publication date
GB1530805A (en) 1978-11-01
US4019121A (en) 1977-04-19
FR2294482B1 (it) 1978-12-08
FR2294482A1 (fr) 1976-07-09
JPS5184057A (it) 1976-07-23
DE2459271A1 (de) 1976-06-16
DE2459271C3 (de) 1980-08-28
DE2459271B2 (de) 1980-01-03
CA1032619A (en) 1978-06-06
JPS5953563B2 (ja) 1984-12-26

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