IT1051042B - Coppia di transistori bipolari con regioni di base elettricamente collegate tra di loro e procedimento per la fabbricazione della coppia di transistori - Google Patents

Coppia di transistori bipolari con regioni di base elettricamente collegate tra di loro e procedimento per la fabbricazione della coppia di transistori

Info

Publication number
IT1051042B
IT1051042B IT30319/75A IT3031975A IT1051042B IT 1051042 B IT1051042 B IT 1051042B IT 30319/75 A IT30319/75 A IT 30319/75A IT 3031975 A IT3031975 A IT 3031975A IT 1051042 B IT1051042 B IT 1051042B
Authority
IT
Italy
Prior art keywords
pair
transistors
procedure
manufacture
electrically connected
Prior art date
Application number
IT30319/75A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1051042B publication Critical patent/IT1051042B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT30319/75A 1974-12-19 1975-12-16 Coppia di transistori bipolari con regioni di base elettricamente collegate tra di loro e procedimento per la fabbricazione della coppia di transistori IT1051042B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742460269 DE2460269A1 (de) 1974-12-19 1974-12-19 Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares

Publications (1)

Publication Number Publication Date
IT1051042B true IT1051042B (it) 1981-04-21

Family

ID=5933916

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30319/75A IT1051042B (it) 1974-12-19 1975-12-16 Coppia di transistori bipolari con regioni di base elettricamente collegate tra di loro e procedimento per la fabbricazione della coppia di transistori

Country Status (7)

Country Link
US (1) US4038676A (it)
JP (1) JPS5186371A (it)
CA (1) CA1045250A (it)
DE (1) DE2460269A1 (it)
FR (1) FR2295572A1 (it)
GB (1) GB1537057A (it)
IT (1) IT1051042B (it)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83838C (it) * 1952-12-01 1957-01-15
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
JPS5223715B2 (it) * 1972-03-27 1977-06-25
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit

Also Published As

Publication number Publication date
JPS5186371A (it) 1976-07-28
GB1537057A (en) 1978-12-29
CA1045250A (en) 1978-12-26
FR2295572B1 (it) 1978-04-14
DE2460269A1 (de) 1976-07-01
US4038676A (en) 1977-07-26
FR2295572A1 (fr) 1976-07-16

Similar Documents

Publication Publication Date Title
IT1047337B (it) Procedimento combinato per la fabbracazione di transistori verticali bipolari isolati con ossido e di transistori laterali bipolari complementari isolati con ossido e strutture ottenute con il procedimento
IT1056756B (it) Procedimento per la fabbricazione di dispositivi semiconduttori con isolamento dielettrico
IT1064386B (it) Procedimento per la fabbricazione di transistori
IT1039025B (it) Wafer dielettrico perfezionato
IT1032591B (it) Procedimento per la fabbricazione di dispostivi semiconduttori
IT1106505B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
IT980775B (it) Procedimento per la fabbricazione di dispositivi semiconduttori e di spositivi ottenuti con il procedi mento
IT980207B (it) Procedimento e dispositivo per la produzione di avvolgimenti elettrici
BE857239A (fr) Electrode bipolaire
IT1071194B (it) Procedimento per la fabbricazione di dispositivi semiconduttori di memoria
FR2316729A1 (fr) Circuit integre bipolaire
IT1028325B (it) Transistore bipolare e metodo di fabbricazione dello stesso
IT1019665B (it) Apparecchiatura e procedimento particolarmente per la fabbrica zione di un elettrodo autoforman te privo di ferro
IT947721B (it) Perfezionamento al montaggio delle connessioni elettriche
IT1112065B (it) Procedimento per la produzione di triclorosinalo e tetracloruro di silicio
IT1016474B (it) Procedimento per la formazione di isolatori e isolatori cosi ottenuti
BR7504809A (pt) Celua eletrolitica de elementos bipolares
BE780893A (fr) Procede de fabrication d'une electrode
SE7510228L (sv) Elektrisk isolator
IT943942B (it) Disposizione di contatti elettrici
CH533351A (de) Elektrische Kontaktvorrichtung für hohe Ströme
IT1069679B (it) Procedimento e dispositivo per la produzione di monocristalli preformati
IT1058452B (it) Calzatura nonche procedimento e dispositivo per la produzione della medesima
IT969912B (it) Corpo isolante elettrico di mate riale poroso espanso
IT1051042B (it) Coppia di transistori bipolari con regioni di base elettricamente collegate tra di loro e procedimento per la fabbricazione della coppia di transistori