IT1050019B - Sensore d immagine allo stato solido ad accesso casuale con lettura non distruttiva - Google Patents
Sensore d immagine allo stato solido ad accesso casuale con lettura non distruttivaInfo
- Publication number
- IT1050019B IT1050019B IT30091/75A IT3009175A IT1050019B IT 1050019 B IT1050019 B IT 1050019B IT 30091/75 A IT30091/75 A IT 30091/75A IT 3009175 A IT3009175 A IT 3009175A IT 1050019 B IT1050019 B IT 1050019B
- Authority
- IT
- Italy
- Prior art keywords
- random access
- image sensor
- solid state
- state image
- destructive reading
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/537,007 US3988619A (en) | 1974-12-27 | 1974-12-27 | Random access solid-state image sensor with non-destructive read-out |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1050019B true IT1050019B (it) | 1981-03-10 |
Family
ID=24140790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT30091/75A IT1050019B (it) | 1974-12-27 | 1975-12-09 | Sensore d immagine allo stato solido ad accesso casuale con lettura non distruttiva |
Country Status (7)
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104672A (en) * | 1976-10-29 | 1978-08-01 | Bell Telephone Laboratories, Incorporated | High power gallium arsenide schottky barrier field effect transistor |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| US4180416A (en) * | 1978-09-27 | 1979-12-25 | International Business Machines Corporation | Thermal migration-porous silicon technique for forming deep dielectric isolation |
| US4204230A (en) * | 1978-10-25 | 1980-05-20 | Xerox Corporation | High resolution input scanner using a two dimensional detector array |
| JPS56165473A (en) * | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
| US4388532A (en) * | 1981-04-27 | 1983-06-14 | Eastman Kodak Company | Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier |
| US5111253A (en) * | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
| US5262871A (en) * | 1989-11-13 | 1993-11-16 | Rutgers, The State University | Multiple resolution image sensor |
| US6369853B1 (en) | 1997-11-13 | 2002-04-09 | Foveon, Inc. | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications |
| US6069376A (en) * | 1998-03-26 | 2000-05-30 | Foveonics, Inc. | Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications |
| US6160282A (en) * | 1998-04-21 | 2000-12-12 | Foveon, Inc. | CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance |
| US6410899B1 (en) | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
| US6512544B1 (en) | 1998-06-17 | 2003-01-28 | Foveon, Inc. | Storage pixel sensor and array with compression |
| US6054704A (en) * | 1998-06-30 | 2000-04-25 | Foveon, Inc. | Driven capacitor storage pixel sensor and array |
| DE69802509T2 (de) * | 1998-06-30 | 2002-07-18 | St Microelectronics Srl | Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeicheranordnung mit Grabenisolation |
| US6512858B2 (en) | 1998-07-21 | 2003-01-28 | Foveon, Inc. | Image scanning circuitry with row and column addressing for use in electronic cameras |
| US6246043B1 (en) | 1998-09-22 | 2001-06-12 | Foveon, Inc. | Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process |
| US7106374B1 (en) | 1999-04-05 | 2006-09-12 | Amherst Systems, Inc. | Dynamically reconfigurable vision system |
| US6697114B1 (en) | 1999-08-13 | 2004-02-24 | Foveon, Inc. | Triple slope pixel sensor and arry |
| US6809768B1 (en) | 2000-02-14 | 2004-10-26 | Foveon, Inc. | Double slope pixel sensor and array |
| US6882367B1 (en) | 2000-02-29 | 2005-04-19 | Foveon, Inc. | High-sensitivity storage pixel sensor having auto-exposure detection |
| US6946635B1 (en) | 2000-10-05 | 2005-09-20 | Ess Technology, Inc. | System for improving the dynamic range of solid-state imaging devices |
| US7745301B2 (en) | 2005-08-22 | 2010-06-29 | Terapede, Llc | Methods and apparatus for high-density chip connectivity |
| US8957511B2 (en) | 2005-08-22 | 2015-02-17 | Madhukar B. Vora | Apparatus and methods for high-density chip connectivity |
| US9532701B2 (en) | 2013-03-01 | 2017-01-03 | Whirlpool Corporation | Dishwasher with sprayer |
| US10667668B2 (en) | 2013-06-27 | 2020-06-02 | Whirlpool Corporation | Dishwasher with rotationally mounted sprayer |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767984A (en) * | 1969-09-03 | 1973-10-23 | Nippon Electric Co | Schottky barrier type field effect transistor |
| JPS5142903B1 (US07709020-20100504-C00041.png) * | 1970-02-12 | 1976-11-18 | ||
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
| US3721839A (en) * | 1971-03-24 | 1973-03-20 | Philips Corp | Solid state imaging device with fet sensor |
| GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
| DE2345679A1 (de) * | 1972-09-22 | 1974-04-04 | Philips Nv | Halbleiterkaltkathode |
| NL7212912A (US07709020-20100504-C00041.png) * | 1972-09-23 | 1974-03-26 | ||
| NL7308240A (US07709020-20100504-C00041.png) * | 1973-06-14 | 1974-12-17 |
-
1974
- 1974-12-27 US US05/537,007 patent/US3988619A/en not_active Expired - Lifetime
-
1975
- 1975-10-09 GB GB41385/75A patent/GB1481672A/en not_active Expired
- 1975-11-04 CA CA239,236A patent/CA1052892A/en not_active Expired
- 1975-11-05 FR FR7534721A patent/FR2296267A1/fr active Granted
- 1975-11-27 DE DE2553203A patent/DE2553203C2/de not_active Expired
- 1975-12-05 JP JP14409075A patent/JPS5519555B2/ja not_active Expired
- 1975-12-09 IT IT30091/75A patent/IT1050019B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2296267B1 (US07709020-20100504-C00041.png) | 1978-05-12 |
| US3988619A (en) | 1976-10-26 |
| JPS5184514A (US07709020-20100504-C00041.png) | 1976-07-23 |
| CA1052892A (en) | 1979-04-17 |
| FR2296267A1 (fr) | 1976-07-23 |
| GB1481672A (en) | 1977-08-03 |
| DE2553203A1 (de) | 1976-07-08 |
| JPS5519555B2 (US07709020-20100504-C00041.png) | 1980-05-27 |
| DE2553203C2 (de) | 1982-10-21 |
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