IT1027038B - Diodo fotomettitore - Google Patents
Diodo fotomettitoreInfo
- Publication number
- IT1027038B IT1027038B IT70584/74A IT7058474A IT1027038B IT 1027038 B IT1027038 B IT 1027038B IT 70584/74 A IT70584/74 A IT 70584/74A IT 7058474 A IT7058474 A IT 7058474A IT 1027038 B IT1027038 B IT 1027038B
- Authority
- IT
- Italy
- Prior art keywords
- photomitter
- diode
- photomitter diode
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US423453A US3875451A (en) | 1972-12-15 | 1973-12-10 | Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1027038B true IT1027038B (it) | 1978-11-20 |
Family
ID=23678957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT70584/74A IT1027038B (it) | 1973-12-10 | 1974-12-09 | Diodo fotomettitore |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5092093A (de) |
BE (1) | BE823075A (de) |
CA (1) | CA1018642A (de) |
DE (1) | DE2457460A1 (de) |
FR (1) | FR2254110B1 (de) |
GB (1) | GB1494348A (de) |
IT (1) | IT1027038B (de) |
NL (1) | NL7415996A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016129172A1 (ja) * | 2015-02-09 | 2016-08-18 | 住友電気工業株式会社 | インジウムリン基板、インジウムリン基板の検査方法、およびインジウムリン基板の製造方法 |
-
1974
- 1974-09-10 CA CA208,851A patent/CA1018642A/en not_active Expired
- 1974-12-05 DE DE19742457460 patent/DE2457460A1/de not_active Withdrawn
- 1974-12-06 BE BE151269A patent/BE823075A/xx unknown
- 1974-12-09 GB GB53088/74A patent/GB1494348A/en not_active Expired
- 1974-12-09 IT IT70584/74A patent/IT1027038B/it active
- 1974-12-09 FR FR7440253A patent/FR2254110B1/fr not_active Expired
- 1974-12-09 NL NL7415996A patent/NL7415996A/xx not_active Application Discontinuation
- 1974-12-10 JP JP14123674A patent/JPS5092093A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1018642A (en) | 1977-10-04 |
FR2254110B1 (de) | 1979-02-23 |
FR2254110A1 (de) | 1975-07-04 |
JPS5092093A (de) | 1975-07-23 |
GB1494348A (en) | 1977-12-07 |
NL7415996A (nl) | 1975-06-12 |
BE823075A (fr) | 1975-04-01 |
DE2457460A1 (de) | 1975-06-12 |
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