IT1020224B - Metodo per la diffusione di im purezze in cristalli semicondut tori di nitruri - Google Patents
Metodo per la diffusione di im purezze in cristalli semicondut tori di nitruriInfo
- Publication number
- IT1020224B IT1020224B IT26649/74A IT2664974A IT1020224B IT 1020224 B IT1020224 B IT 1020224B IT 26649/74 A IT26649/74 A IT 26649/74A IT 2664974 A IT2664974 A IT 2664974A IT 1020224 B IT1020224 B IT 1020224B
- Authority
- IT
- Italy
- Prior art keywords
- purity
- diffusion
- nitride crystals
- semiconductive
- semiconductive nitride
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
- C30B31/185—Pattern diffusion, e.g. by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US399822A US3865655A (en) | 1973-09-24 | 1973-09-24 | Method for diffusing impurities into nitride semiconductor crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1020224B true IT1020224B (it) | 1977-12-20 |
Family
ID=23581095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT26649/74A IT1020224B (it) | 1973-09-24 | 1974-08-27 | Metodo per la diffusione di im purezze in cristalli semicondut tori di nitruri |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3865655A (enExample) |
| JP (1) | JPS5144381B2 (enExample) |
| CA (1) | CA1037840A (enExample) |
| CH (1) | CH595134A5 (enExample) |
| DE (1) | DE2444107A1 (enExample) |
| FR (1) | FR2245082B1 (enExample) |
| GB (1) | GB1473400A (enExample) |
| IT (1) | IT1020224B (enExample) |
| NL (1) | NL7412533A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4102715A (en) * | 1975-12-19 | 1978-07-25 | Matsushita Electric Industrial Co., Ltd. | Method for diffusing an impurity into a semiconductor body |
| FR2361744A1 (fr) * | 1976-08-10 | 1978-03-10 | Ibm | Procede pour l'obtention d'une conductivite de type p dans un materiau semi-conducteur auto-compense et dispositifs semi-conducteurs en resultant |
| DE2738329A1 (de) * | 1976-09-06 | 1978-03-09 | Philips Nv | Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung |
| US4095331A (en) * | 1976-11-04 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | Fabrication of an epitaxial layer diode in aluminum nitride on sapphire |
| SU773795A1 (ru) * | 1977-04-01 | 1980-10-23 | Предприятие П/Я А-1172 | Светоизлучающий прибор |
| EP0979883A4 (en) * | 1997-12-25 | 2003-10-15 | Japan Energy Corp | METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS AND SINGLE CRYSTALS OF COMPOSITE SEMICONDUCTORS |
| AU2002252566A1 (en) * | 2001-03-30 | 2002-10-15 | Technologies And Devices International Inc. | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
| US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
| US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
| US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
| US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
| US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
| DE102007017080A1 (de) | 2007-04-10 | 2008-10-16 | Basf Se | Verfahren zur Beschickung eines Längsabschnitts eines Kontaktrohres |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3540952A (en) * | 1968-01-02 | 1970-11-17 | Gen Electric | Process for fabricating semiconductor laser diodes |
| US3554818A (en) * | 1968-04-25 | 1971-01-12 | Avco Corp | Indium antimonide infrared detector and process for making the same |
| US3592704A (en) * | 1968-06-28 | 1971-07-13 | Bell Telephone Labor Inc | Electroluminescent device |
| US3603833A (en) * | 1970-02-16 | 1971-09-07 | Bell Telephone Labor Inc | Electroluminescent junction semiconductor with controllable combination colors |
| US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
| US3764414A (en) * | 1972-05-01 | 1973-10-09 | Ibm | Open tube diffusion in iii-v compunds |
-
1973
- 1973-09-24 US US399822A patent/US3865655A/en not_active Expired - Lifetime
-
1974
- 1974-08-27 IT IT26649/74A patent/IT1020224B/it active
- 1974-09-03 CA CA208,335A patent/CA1037840A/en not_active Expired
- 1974-09-10 GB GB3937274A patent/GB1473400A/en not_active Expired
- 1974-09-14 DE DE2444107A patent/DE2444107A1/de active Pending
- 1974-09-20 JP JP49109453A patent/JPS5144381B2/ja not_active Expired
- 1974-09-23 FR FR7431950A patent/FR2245082B1/fr not_active Expired
- 1974-09-23 CH CH1281874A patent/CH595134A5/xx not_active IP Right Cessation
- 1974-09-23 NL NL7412533A patent/NL7412533A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2245082B1 (enExample) | 1979-03-16 |
| JPS5144381B2 (enExample) | 1976-11-27 |
| JPS5061182A (enExample) | 1975-05-26 |
| AU7342574A (en) | 1976-03-25 |
| FR2245082A1 (enExample) | 1975-04-18 |
| CA1037840A (en) | 1978-09-05 |
| DE2444107A1 (de) | 1975-04-03 |
| NL7412533A (nl) | 1975-03-26 |
| US3865655A (en) | 1975-02-11 |
| CH595134A5 (enExample) | 1978-01-31 |
| GB1473400A (en) | 1977-05-11 |
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