IT1012869B - Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo - Google Patents
Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuoloInfo
- Publication number
- IT1012869B IT1012869B IT23240/74A IT2324074A IT1012869B IT 1012869 B IT1012869 B IT 1012869B IT 23240/74 A IT23240/74 A IT 23240/74A IT 2324074 A IT2324074 A IT 2324074A IT 1012869 B IT1012869 B IT 1012869B
- Authority
- IT
- Italy
- Prior art keywords
- crucible
- delivering
- progressive zone
- zone fusion
- semiconductive
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE732327085A DE2327085C3 (de) | 1973-05-28 | 1973-05-28 | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1012869B true IT1012869B (it) | 1977-03-10 |
Family
ID=5882335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23240/74A IT1012869B (it) | 1973-05-28 | 1974-05-28 | Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo |
Country Status (6)
Country | Link |
---|---|
US (1) | US3908586A (ja) |
JP (1) | JPS5336403B2 (ja) |
BE (1) | BE815609A (ja) |
DE (1) | DE2327085C3 (ja) |
DK (1) | DK286274A (ja) |
IT (1) | IT1012869B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4556448A (en) * | 1983-10-19 | 1985-12-03 | International Business Machines Corporation | Method for controlled doping of silicon crystals by improved float zone technique |
DE3518073A1 (de) * | 1985-05-20 | 1986-11-20 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen |
JP4934829B2 (ja) * | 2007-09-06 | 2012-05-23 | 株式会社やまびこ | エンジンユニット |
JP4957600B2 (ja) * | 2008-03-18 | 2012-06-20 | 信越半導体株式会社 | Fz法による半導体結晶製造方法および半導体結晶製造装置 |
JP2017141130A (ja) * | 2016-02-09 | 2017-08-17 | 信越半導体株式会社 | 半導体単結晶の製造方法及び半導体単結晶の製造装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2550899A (en) * | 1948-03-16 | 1951-05-01 | United States Steel Corp | Apparatus for cooling mill rolls |
NL266156A (ja) * | 1960-06-24 | |||
US3606171A (en) * | 1970-03-06 | 1971-09-20 | Walter D Voelker | Injection nozzle of adjustable length |
-
1973
- 1973-05-28 DE DE732327085A patent/DE2327085C3/de not_active Expired
-
1974
- 1974-03-04 US US447745A patent/US3908586A/en not_active Expired - Lifetime
- 1974-05-27 DK DK286274A patent/DK286274A/da unknown
- 1974-05-28 JP JP6015274A patent/JPS5336403B2/ja not_active Expired
- 1974-05-28 IT IT23240/74A patent/IT1012869B/it active
- 1974-05-28 BE BE144810A patent/BE815609A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3908586A (en) | 1975-09-30 |
DK286274A (ja) | 1975-01-20 |
DE2327085B2 (de) | 1978-07-20 |
DE2327085C3 (de) | 1979-03-08 |
JPS5020907A (ja) | 1975-03-05 |
BE815609A (fr) | 1974-09-16 |
DE2327085A1 (de) | 1974-12-19 |
JPS5336403B2 (ja) | 1978-10-03 |
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