IT1012869B - Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo - Google Patents

Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo

Info

Publication number
IT1012869B
IT1012869B IT23240/74A IT2324074A IT1012869B IT 1012869 B IT1012869 B IT 1012869B IT 23240/74 A IT23240/74 A IT 23240/74A IT 2324074 A IT2324074 A IT 2324074A IT 1012869 B IT1012869 B IT 1012869B
Authority
IT
Italy
Prior art keywords
crucible
delivering
progressive zone
zone fusion
semiconductive
Prior art date
Application number
IT23240/74A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1012869B publication Critical patent/IT1012869B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT23240/74A 1973-05-28 1974-05-28 Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo IT1012869B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE732327085A DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
IT1012869B true IT1012869B (it) 1977-03-10

Family

ID=5882335

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23240/74A IT1012869B (it) 1973-05-28 1974-05-28 Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo

Country Status (6)

Country Link
US (1) US3908586A (fr)
JP (1) JPS5336403B2 (fr)
BE (1) BE815609A (fr)
DE (1) DE2327085C3 (fr)
DK (1) DK286274A (fr)
IT (1) IT1012869B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
DE3518073A1 (de) * 1985-05-20 1986-11-20 Siemens AG, 1000 Berlin und 8000 München Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen
JP4934829B2 (ja) * 2007-09-06 2012-05-23 株式会社やまびこ エンジンユニット
JP4957600B2 (ja) * 2008-03-18 2012-06-20 信越半導体株式会社 Ｆｚ法による半導体結晶製造方法および半導体結晶製造装置
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2550899A (en) * 1948-03-16 1951-05-01 United States Steel Corp Apparatus for cooling mill rolls
NL266156A (fr) * 1960-06-24
US3606171A (en) * 1970-03-06 1971-09-20 Walter D Voelker Injection nozzle of adjustable length

Also Published As

Publication number Publication date
DE2327085A1 (de) 1974-12-19
DE2327085C3 (de) 1979-03-08
DK286274A (fr) 1975-01-20
DE2327085B2 (de) 1978-07-20
JPS5020907A (fr) 1975-03-05
JPS5336403B2 (fr) 1978-10-03
US3908586A (en) 1975-09-30
BE815609A (fr) 1974-09-16

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