IT1009920B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1009920B
IT1009920B IT2161174A IT2161174A IT1009920B IT 1009920 B IT1009920 B IT 1009920B IT 2161174 A IT2161174 A IT 2161174A IT 2161174 A IT2161174 A IT 2161174A IT 1009920 B IT1009920 B IT 1009920B
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT2161174A
Other languages
English (en)
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1009920B publication Critical patent/IT1009920B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
IT2161174A 1973-04-18 1974-04-18 Dispositivo semiconduttore IT1009920B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4388173A JPS49131388A (ru) 1973-04-18 1973-04-18

Publications (1)

Publication Number Publication Date
IT1009920B true IT1009920B (it) 1976-12-20

Family

ID=12676034

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2161174A IT1009920B (it) 1973-04-18 1974-04-18 Dispositivo semiconduttore

Country Status (8)

Country Link
JP (1) JPS49131388A (ru)
AT (1) AT373443B (ru)
CA (1) CA1015867A (ru)
DE (1) DE2418560A1 (ru)
FR (1) FR2226750B1 (ru)
GB (1) GB1472113A (ru)
IT (1) IT1009920B (ru)
NL (1) NL7405294A (ru)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (ru) * 1974-04-04 1982-11-20
JPS5753672B2 (ru) * 1974-04-10 1982-11-13
JPS57658B2 (ru) * 1974-04-16 1982-01-07
JPS5714064B2 (ru) * 1974-04-25 1982-03-20
JPS5648983B2 (ru) * 1974-05-10 1981-11-19
JPS5718710B2 (ru) * 1974-05-10 1982-04-17
DE2705990A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor e2
DE2706031A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor
US4365208A (en) * 1980-04-23 1982-12-21 Rca Corporation Gain-controlled amplifier using a controllable alternating-current resistance

Also Published As

Publication number Publication date
FR2226750A1 (ru) 1974-11-15
JPS49131388A (ru) 1974-12-17
GB1472113A (en) 1977-05-04
NL7405294A (ru) 1974-10-22
AT373443B (de) 1984-01-25
DE2418560A1 (de) 1974-11-14
FR2226750B1 (ru) 1978-03-24
ATA323074A (de) 1983-05-15
CA1015867A (en) 1977-08-16

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