AT373443B - Schaltkreis mit einem halbleiterbauteil - Google Patents

Schaltkreis mit einem halbleiterbauteil

Info

Publication number
AT373443B
AT373443B AT323074A AT323074A AT373443B AT 373443 B AT373443 B AT 373443B AT 323074 A AT323074 A AT 323074A AT 323074 A AT323074 A AT 323074A AT 373443 B AT373443 B AT 373443B
Authority
AT
Austria
Prior art keywords
circuit
semiconductor component
semiconductor
component
Prior art date
Application number
AT323074A
Other languages
German (de)
English (en)
Other versions
ATA323074A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA323074A publication Critical patent/ATA323074A/de
Application granted granted Critical
Publication of AT373443B publication Critical patent/AT373443B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
AT323074A 1973-04-18 1974-04-18 Schaltkreis mit einem halbleiterbauteil AT373443B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4388173A JPS49131388A (ru) 1973-04-18 1973-04-18

Publications (2)

Publication Number Publication Date
ATA323074A ATA323074A (de) 1983-05-15
AT373443B true AT373443B (de) 1984-01-25

Family

ID=12676034

Family Applications (1)

Application Number Title Priority Date Filing Date
AT323074A AT373443B (de) 1973-04-18 1974-04-18 Schaltkreis mit einem halbleiterbauteil

Country Status (8)

Country Link
JP (1) JPS49131388A (ru)
AT (1) AT373443B (ru)
CA (1) CA1015867A (ru)
DE (1) DE2418560A1 (ru)
FR (1) FR2226750B1 (ru)
GB (1) GB1472113A (ru)
IT (1) IT1009920B (ru)
NL (1) NL7405294A (ru)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (ru) * 1974-04-04 1982-11-20
JPS5753672B2 (ru) * 1974-04-10 1982-11-13
JPS57658B2 (ru) * 1974-04-16 1982-01-07
JPS5714064B2 (ru) * 1974-04-25 1982-03-20
JPS5648983B2 (ru) * 1974-05-10 1981-11-19
JPS5718710B2 (ru) * 1974-05-10 1982-04-17
DE2705990A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor e2
DE2706031A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor
US4365208A (en) * 1980-04-23 1982-12-21 Rca Corporation Gain-controlled amplifier using a controllable alternating-current resistance

Also Published As

Publication number Publication date
FR2226750A1 (ru) 1974-11-15
JPS49131388A (ru) 1974-12-17
GB1472113A (en) 1977-05-04
NL7405294A (ru) 1974-10-22
DE2418560A1 (de) 1974-11-14
IT1009920B (it) 1976-12-20
FR2226750B1 (ru) 1978-03-24
ATA323074A (de) 1983-05-15
CA1015867A (en) 1977-08-16

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
ELJ Ceased due to non-payment of the annual fee