IT1006088B - Memoria a semiconduttori a base di ossidi metallici con sistema per rigenerare i contenuti di memorizzazione - Google Patents

Memoria a semiconduttori a base di ossidi metallici con sistema per rigenerare i contenuti di memorizzazione

Info

Publication number
IT1006088B
IT1006088B IT29021/73A IT2902173A IT1006088B IT 1006088 B IT1006088 B IT 1006088B IT 29021/73 A IT29021/73 A IT 29021/73A IT 2902173 A IT2902173 A IT 2902173A IT 1006088 B IT1006088 B IT 1006088B
Authority
IT
Italy
Prior art keywords
regenerate
semiconductor memory
memory based
storage contents
metallic oxides
Prior art date
Application number
IT29021/73A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1006088B publication Critical patent/IT1006088B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
IT29021/73A 1972-09-29 1973-09-18 Memoria a semiconduttori a base di ossidi metallici con sistema per rigenerare i contenuti di memorizzazione IT1006088B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2247835A DE2247835C3 (de) 1972-09-29 1972-09-29 Verfahren zum Regenerieren der Speicherinhalte von MOS-Speichern und MOS-Speicher zur Durchführung dieses Verfahrens

Publications (1)

Publication Number Publication Date
IT1006088B true IT1006088B (it) 1976-09-30

Family

ID=5857763

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29021/73A IT1006088B (it) 1972-09-29 1973-09-18 Memoria a semiconduttori a base di ossidi metallici con sistema per rigenerare i contenuti di memorizzazione

Country Status (7)

Country Link
US (1) US4112513A (it)
BE (1) BE805470A (it)
DE (1) DE2247835C3 (it)
FR (1) FR2201520B1 (it)
GB (1) GB1452514A (it)
IT (1) IT1006088B (it)
NL (1) NL178825C (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1041882B (it) * 1975-08-20 1980-01-10 Honeywell Inf Systems Memoria dinamica a semiconduttori e relativo sistema di recarica
NL7600648A (nl) * 1976-01-22 1977-07-26 Philips Nv Geheugen met dynamische informatieopslag.
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4506362A (en) * 1978-12-22 1985-03-19 Gould Inc. Systematic memory error detection and correction apparatus and method
US4238842A (en) * 1978-12-26 1980-12-09 Ibm Corporation LARAM Memory with reordered selection sequence for refresh
US4317169A (en) * 1979-02-14 1982-02-23 Honeywell Information Systems Inc. Data processing system having centralized memory refresh
US4387423A (en) * 1979-02-16 1983-06-07 Honeywell Information Systems Inc. Microprogrammed system having single microstep apparatus
US4449183A (en) * 1979-07-09 1984-05-15 Digital Equipment Corporation Arbitration scheme for a multiported shared functional device for use in multiprocessing systems
US4380812A (en) * 1980-04-25 1983-04-19 Data General Corporation Refresh and error detection and correction technique for a data processing system
US4482979A (en) * 1982-02-04 1984-11-13 May George A Video computing system with automatically refreshed memory
DE3343192C2 (de) * 1983-11-29 1985-10-03 Nixdorf Computer Ag, 4790 Paderborn Schaltungsanordnung zum Wiederauffrischen der in einem dynamischen Speicher enthaltenen Informationen
US4758993A (en) * 1984-11-19 1988-07-19 Fujitsu Limited Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays
JPH0766660B2 (ja) * 1985-03-25 1995-07-19 株式会社日立製作所 ダイナミツク型ｒａｍ
JPH0612613B2 (ja) * 1986-03-18 1994-02-16 富士通株式会社 半導体記憶装置
US4831594A (en) * 1986-09-25 1989-05-16 Texas Instrument, Inc. Process and device for refreshing an array of dynamic memory cells during precharge of the column lines
US5265231A (en) * 1991-02-08 1993-11-23 Thinking Machines Corporation Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system
KR950014089B1 (ko) * 1993-11-08 1995-11-21 현대전자산업주식회사 동기식 디램의 히든 셀프 리프레쉬 방법 및 장치
US6256249B1 (en) * 1999-12-30 2001-07-03 Cypress Semiconductor Corp. Method for hidden DRAM refresh
JP2003007054A (ja) * 2001-06-15 2003-01-10 Sharp Corp 半導体記憶装置
WO2005029778A1 (ja) * 2003-09-16 2005-03-31 Fujitsu Limited 通信制御回路および通信制御方法
US7330391B2 (en) * 2005-10-17 2008-02-12 Infineon Technologies Ag Memory having directed auto-refresh
FR3132954B1 (fr) 2022-02-21 2024-01-05 Psa Automobiles Sa Procede de diagnostic d’un defaut de deconnexion d’un stockeur electrique de securite dans un reseau electrique de bord d’un vehicule electrifie

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760379A (en) * 1971-12-29 1973-09-18 Honeywell Inf Systems Apparatus and method for memory refreshment control
US3800295A (en) * 1971-12-30 1974-03-26 Ibm Asynchronously operated memory system
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3748651A (en) * 1972-02-16 1973-07-24 Cogar Corp Refresh control for add-on semiconductor memory
US3790961A (en) * 1972-06-09 1974-02-05 Advanced Memory Syst Inc Random access dynamic semiconductor memory system

Also Published As

Publication number Publication date
FR2201520B1 (it) 1978-02-10
GB1452514A (en) 1976-10-13
DE2247835B2 (de) 1974-09-12
DE2247835C3 (de) 1978-10-05
US4112513A (en) 1978-09-05
BE805470A (fr) 1974-03-28
NL178825C (nl) 1986-05-16
NL7313198A (it) 1974-04-02
NL178825B (nl) 1985-12-16
DE2247835A1 (de) 1974-04-18
FR2201520A1 (it) 1974-04-26

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