IN2015DN02262A - - Google Patents
Info
- Publication number
- IN2015DN02262A IN2015DN02262A IN2262DEN2015A IN2015DN02262A IN 2015DN02262 A IN2015DN02262 A IN 2015DN02262A IN 2262DEN2015 A IN2262DEN2015 A IN 2262DEN2015A IN 2015DN02262 A IN2015DN02262 A IN 2015DN02262A
- Authority
- IN
- India
- Prior art keywords
- layers
- culet
- defect
- sets
- single crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Adornments (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261702982P | 2012-09-19 | 2012-09-19 | |
GBGB1216697.1A GB201216697D0 (en) | 2012-09-19 | 2012-09-19 | Single crystal chemical vapour deposited synthetic diamond materials having uniform colour |
PCT/EP2013/069013 WO2014044607A1 (en) | 2012-09-19 | 2013-09-13 | Single crystal chemical vapour deposited synthetic diamond materials having uniform colour |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN02262A true IN2015DN02262A (de) | 2015-08-21 |
Family
ID=47144492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2262DEN2015 IN2015DN02262A (de) | 2012-09-19 | 2013-09-13 |
Country Status (13)
Country | Link |
---|---|
US (1) | US11746436B2 (de) |
EP (1) | EP2898124B1 (de) |
JP (1) | JP6047846B2 (de) |
CN (1) | CN104854267B (de) |
CA (1) | CA2884543C (de) |
GB (2) | GB201216697D0 (de) |
HK (1) | HK1208507A1 (de) |
IL (1) | IL237729B (de) |
IN (1) | IN2015DN02262A (de) |
MY (1) | MY180153A (de) |
RU (1) | RU2595671C1 (de) |
SG (1) | SG11201502117QA (de) |
WO (1) | WO2014044607A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3366815A4 (de) * | 2015-10-19 | 2019-11-13 | Sumitomo Electric Industries, Ltd. | Einkristalldiamant, werkzeug damit und verfahren zur herstellung eines einkristalldiamanten |
CN110219043A (zh) * | 2019-05-23 | 2019-09-10 | 宁波晶钻工业科技有限公司 | 一种多色单晶金刚石生长方法 |
CN111024819A (zh) * | 2019-12-23 | 2020-04-17 | 复旦大学 | 一种珠宝与首饰声共振谱仿伪方法 |
JPWO2022210566A1 (de) * | 2021-03-31 | 2022-10-06 | ||
GB2614240B (en) | 2021-12-21 | 2024-08-14 | Element Six Tech Ltd | Sensor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE407237T1 (de) * | 2000-06-15 | 2008-09-15 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
EP1632590B1 (de) * | 2000-06-15 | 2017-01-11 | Element Six Technologies Limited | Dicke einkristalline Diamantschicht, Verfahren zur Herstellung der Schicht und Edelsteine hergestellt durch Bearbeitung der Schicht |
AU2001281404B2 (en) | 2001-08-08 | 2008-07-03 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
GB0130004D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
GB0220772D0 (en) * | 2002-09-06 | 2002-10-16 | Diamanx Products Ltd | Coloured diamond |
ATE489490T1 (de) * | 2002-09-06 | 2010-12-15 | Element Six Ltd | Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht |
WO2005061400A1 (en) * | 2003-12-12 | 2005-07-07 | Element Six Limited | Method of incorporating a mark in cvd diamond |
KR101240785B1 (ko) | 2003-12-12 | 2013-03-07 | 엘리멘트 식스 리미티드 | 화학적 증착 다이아몬드에 마크를 통합시키는 방법 |
GB0512728D0 (en) * | 2005-06-22 | 2005-07-27 | Element Six Ltd | High colour diamond |
US20090297429A1 (en) * | 2006-01-04 | 2009-12-03 | Vohra Yogesh K | High growth rate methods of producing high-quality diamonds |
US20100028556A1 (en) * | 2008-05-09 | 2010-02-04 | Apollo Diamond Gemstone Corporation | Chemical vapor deposition colored diamond |
EP2446069B1 (de) | 2009-06-26 | 2018-08-08 | Element Six Technologies Limited | Verfahren zur behandlung eines cvd-einkristalldiamants und daraus gewonnenes produkt |
GB201000768D0 (en) | 2010-01-18 | 2010-03-03 | Element Six Ltd | CVD single crystal diamond material |
US9277792B2 (en) * | 2010-08-24 | 2016-03-08 | Board Of Trustees Of Michigan State University | Multicolored single crystal diamond gemstones and methods for forming the same |
CN103370765B (zh) | 2010-12-23 | 2016-09-07 | 六号元素有限公司 | 控制合成金刚石材料的掺杂 |
-
2012
- 2012-09-19 GB GBGB1216697.1A patent/GB201216697D0/en not_active Ceased
-
2013
- 2013-09-13 EP EP13776738.0A patent/EP2898124B1/de active Active
- 2013-09-13 CN CN201380056310.9A patent/CN104854267B/zh active Active
- 2013-09-13 MY MYPI2015700850A patent/MY180153A/en unknown
- 2013-09-13 JP JP2015532377A patent/JP6047846B2/ja active Active
- 2013-09-13 CA CA2884543A patent/CA2884543C/en active Active
- 2013-09-13 IN IN2262DEN2015 patent/IN2015DN02262A/en unknown
- 2013-09-13 SG SG11201502117QA patent/SG11201502117QA/en unknown
- 2013-09-13 RU RU2015109562/05A patent/RU2595671C1/ru active
- 2013-09-13 US US14/426,727 patent/US11746436B2/en active Active
- 2013-09-13 WO PCT/EP2013/069013 patent/WO2014044607A1/en active Application Filing
- 2013-09-18 GB GB1316322.5A patent/GB2508072B/en active Active
-
2015
- 2015-03-12 IL IL237729A patent/IL237729B/en active IP Right Grant
- 2015-09-15 HK HK15109021.7A patent/HK1208507A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB201316322D0 (en) | 2013-10-30 |
HK1208507A1 (en) | 2016-03-04 |
US11746436B2 (en) | 2023-09-05 |
GB2508072B (en) | 2017-05-10 |
US20150240382A1 (en) | 2015-08-27 |
SG11201502117QA (en) | 2015-05-28 |
CA2884543A1 (en) | 2014-03-27 |
RU2595671C1 (ru) | 2016-08-27 |
CA2884543C (en) | 2017-05-09 |
JP2015531337A (ja) | 2015-11-02 |
GB2508072A (en) | 2014-05-21 |
EP2898124B1 (de) | 2019-03-27 |
MY180153A (en) | 2020-11-23 |
JP6047846B2 (ja) | 2016-12-21 |
WO2014044607A1 (en) | 2014-03-27 |
CN104854267A (zh) | 2015-08-19 |
EP2898124A1 (de) | 2015-07-29 |
IL237729B (en) | 2018-08-30 |
GB201216697D0 (en) | 2012-10-31 |
CN104854267B (zh) | 2019-04-09 |
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