IN2014DN06225A - - Google Patents

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Publication number
IN2014DN06225A
IN2014DN06225A IN6225DEN2014A IN2014DN06225A IN 2014DN06225 A IN2014DN06225 A IN 2014DN06225A IN 6225DEN2014 A IN6225DEN2014 A IN 6225DEN2014A IN 2014DN06225 A IN2014DN06225 A IN 2014DN06225A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Denis René Pierre Mathieu
Original Assignee
American Power Conv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Power Conv Corp filed Critical American Power Conv Corp
Publication of IN2014DN06225A publication Critical patent/IN2014DN06225A/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009AC switches, i.e. delivering AC power to a load
IN6225DEN2014 2012-01-05 2014-07-23 IN2014DN06225A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2012/000160 WO2013102778A1 (en) 2012-01-05 2012-01-05 Apparatus and method for control of semiconductor switching devices

Publications (1)

Publication Number Publication Date
IN2014DN06225A true IN2014DN06225A (de) 2015-10-23

Family

ID=45895420

Family Applications (1)

Application Number Title Priority Date Filing Date
IN6225DEN2014 IN2014DN06225A (de) 2012-01-05 2014-07-23

Country Status (7)

Country Link
US (1) US9509299B2 (de)
EP (1) EP2801153B1 (de)
CN (1) CN104040890B (de)
AU (1) AU2012364264B2 (de)
DK (1) DK2801153T3 (de)
IN (1) IN2014DN06225A (de)
WO (1) WO2013102778A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9606567B2 (en) 2012-10-10 2017-03-28 Nxp Usa, Inc. Method and apparatus for providing electrical isolation
US9543942B2 (en) 2013-11-22 2017-01-10 Nxp Usa, Inc. Method and apparatus for controlling an IGBT device
CN103986315B (zh) * 2014-06-10 2016-08-17 安徽工业大学 基于有源栅极电流控制方式的igbt电流源驱动电路及其控制方法
EP3174205A1 (de) * 2015-11-27 2017-05-31 ABB Technology Oy Steuerungsschaltung mit rückkopplung
DE102016207384A1 (de) * 2016-04-29 2017-11-02 Robert Bosch Gmbh Verfahren zum Schutz eines Halbleiterschalters, Schutzvorrichtung für einen Halbleiterschalter und Ansteuerschaltung für einen Halbleiterschalter
US10071652B2 (en) * 2016-05-11 2018-09-11 Ford Global Technologies, Llc Dual mode IGBT gate drive to reduce switching loss
JP6805622B2 (ja) * 2016-08-12 2020-12-23 富士電機株式会社 半導体装置
CN108631557B (zh) * 2017-03-20 2020-03-10 台达电子企业管理(上海)有限公司 绝缘栅双极型晶体管的栅极电压控制电路及其控制方法
CN113193861A (zh) * 2021-04-16 2021-07-30 台达电子企业管理(上海)有限公司 一种防止半导体开关器件误开通的电路以及控制方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920224A (en) * 1998-02-17 1999-07-06 Harris Corporation Network for improving electro-magnetic interference response
US6091274A (en) * 1998-02-17 2000-07-18 Intersil Corporation Optimum placement of bypass capacitors in a network for improving electro-magnetic interference response
JP3255147B2 (ja) * 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
JP3514641B2 (ja) * 1998-10-30 2004-03-31 株式会社日立製作所 内燃機関用点火装置および点火制御システム
DE10149777A1 (de) * 2001-10-09 2003-04-24 Bosch Gmbh Robert Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung
DE10215363A1 (de) * 2002-04-08 2003-10-30 Eupec Gmbh & Co Kg Schaltungsanordnung zum Ansteuern eines Halbleiterschalters
JP3883925B2 (ja) * 2002-07-30 2007-02-21 三菱電機株式会社 電力用半導体素子の駆動回路
US7466185B2 (en) * 2006-10-23 2008-12-16 Infineon Technologies Ag IGBT-Driver circuit for desaturated turn-off with high desaturation level
US8598921B2 (en) * 2006-11-22 2013-12-03 Ct-Concept Holding Gmbh Control circuit and method for controlling a power semiconductor switch
FR2936114B1 (fr) * 2008-09-15 2011-08-05 Converteam Technology Ltd Circuit d'equilibrage des tensions d'une pluralite de transistors igbt connectes en serie
DE102009045052B4 (de) * 2008-09-30 2013-04-04 Infineon Technologies Ag Bereitstellen einer Versorgungsspannung für eine Ansteuerschaltung eines Halbleiterschaltelements
FR2941577B1 (fr) * 2009-01-27 2011-02-11 Schneider Electric Ind Sas Dispositif de commande d'un transistor jfet
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
JP5682269B2 (ja) * 2010-12-06 2015-03-11 サンケン電気株式会社 ゲート駆動回路及び半導体装置
US8310796B2 (en) * 2011-07-13 2012-11-13 General Electric Company Methods and systems for operating power converters
US8767369B2 (en) * 2011-12-20 2014-07-01 General Electric Company Method, power unit, and power system having gate voltage limiting circuit
WO2014034063A1 (ja) * 2012-08-30 2014-03-06 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
AU2012364264B2 (en) 2017-05-11
AU2012364264A1 (en) 2014-07-10
EP2801153A1 (de) 2014-11-12
US9509299B2 (en) 2016-11-29
US20150042397A1 (en) 2015-02-12
EP2801153B1 (de) 2019-08-21
CN104040890B (zh) 2017-06-06
CN104040890A (zh) 2014-09-10
WO2013102778A1 (en) 2013-07-11
DK2801153T3 (da) 2019-11-04

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