IN2014DE00065A - - Google Patents

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Publication number
IN2014DE00065A
IN2014DE00065A IN65DE2014A IN2014DE00065A IN 2014DE00065 A IN2014DE00065 A IN 2014DE00065A IN 65DE2014 A IN65DE2014 A IN 65DE2014A IN 2014DE00065 A IN2014DE00065 A IN 2014DE00065A
Authority
IN
India
Prior art keywords
sample
resin
lnteraction
detected
charged particle
Prior art date
Application number
Other languages
English (en)
Inventor
Hill Edward
Bean Stewart
Original Assignee
Carl Zeiss Microscopy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Microscopy Ltd filed Critical Carl Zeiss Microscopy Ltd
Publication of IN2014DE00065A publication Critical patent/IN2014DE00065A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2254Measuring cathodoluminescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2804Scattered primary beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2806Secondary charged particle
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2808Cathodoluminescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2809Scanning microscopes characterised by the imaging problems involved

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
IN65DE2014 2013-01-15 2014-01-09 IN2014DE00065A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP13151344.2A EP2755021B1 (en) 2013-01-15 2013-01-15 Method of analyzing a sample and charged particle beam device for analyzing a sample

Publications (1)

Publication Number Publication Date
IN2014DE00065A true IN2014DE00065A (https=) 2015-06-19

Family

ID=47563221

Family Applications (1)

Application Number Title Priority Date Filing Date
IN65DE2014 IN2014DE00065A (https=) 2013-01-15 2014-01-09

Country Status (4)

Country Link
US (1) US9159532B2 (https=)
EP (1) EP2755021B1 (https=)
CN (1) CN104089966B (https=)
IN (1) IN2014DE00065A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190241B2 (en) * 2013-03-25 2015-11-17 Hermes-Microvision, Inc. Charged particle beam apparatus
US10410828B2 (en) * 2014-12-22 2019-09-10 Carl Zeiss Microscopy, Llc Charged particle beam system and methods
US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
WO2018225563A1 (ja) * 2017-06-05 2018-12-13 フォンダチオーネ ブルーノ ケスラー 放射線検出器及び放射線検出装置
CN107727677A (zh) * 2017-09-22 2018-02-23 中国科学院地质与地球物理研究所 独居石的阴极发光成像方法
CN112106168B (zh) * 2018-05-22 2024-04-16 株式会社日立高新技术 带电粒子束装置及带电粒子束装置的检测器位置调整方法
CN110376229B (zh) * 2019-06-12 2020-09-04 聚束科技(北京)有限公司 具备复合式探测系统的扫描电子显微镜和样品探测方法
DE102019208661A1 (de) * 2019-06-13 2020-12-17 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts und Teilchenstrahlgerät zum Ausführen des Verfahrens
US11114274B2 (en) * 2019-12-23 2021-09-07 Carl Zeiss Smt Gmbh Method and system for testing an integrated circuit
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3834495B2 (ja) * 2001-09-27 2006-10-18 株式会社東芝 微細パターン検査装置、cd−sem装置の管理装置、微細パターン検査方法、cd−sem装置の管理方法、プログラムおよびコンピュータ読み取り可能な記録媒体
WO2004034044A1 (en) * 2002-10-08 2004-04-22 Applied Materials Israel, Ltd. Methods and systems for process monitoring using x-ray emission
CN101630623B (zh) * 2003-05-09 2012-02-22 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
JP4283201B2 (ja) * 2004-10-14 2009-06-24 株式会社荏原製作所 情報記録媒体検査装置および方法
JP4636897B2 (ja) * 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
EP2388796A1 (en) * 2010-05-21 2011-11-23 FEI Company Simultaneous electron detection
US8908925B2 (en) 2011-02-28 2014-12-09 Schlumberger Technology Corporation Methods to build 3D digital models of porous media using a combination of high- and low-resolution data and multi-point statistics
WO2012174173A2 (en) * 2011-06-13 2012-12-20 President And Fellows Of Harvard College Multi-color nanoscale imaging based on nanoparticle cathodoluminescence
DE102012217761B4 (de) * 2012-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging

Also Published As

Publication number Publication date
EP2755021B1 (en) 2016-06-22
CN104089966A (zh) 2014-10-08
US20140197310A1 (en) 2014-07-17
EP2755021A1 (en) 2014-07-16
CN104089966B (zh) 2018-07-27
US9159532B2 (en) 2015-10-13

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