IN2014CN03385A - - Google Patents
Info
- Publication number
- IN2014CN03385A IN2014CN03385A IN3385CHN2014A IN2014CN03385A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A IN 3385CHN2014 A IN3385CHN2014 A IN 3385CHN2014A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A
- Authority
- IN
- India
- Prior art keywords
- forming
- methods
- fabrication
- enable
- electrochemical capacitor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2011/067434 WO2013100916A1 (en) | 2011-12-27 | 2011-12-27 | Fabrication of porous silicon electrochemical capacitors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN03385A true IN2014CN03385A (cg-RX-API-DMAC10.html) | 2015-07-03 |
Family
ID=48698160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3385CHN2014 IN2014CN03385A (cg-RX-API-DMAC10.html) | 2011-12-27 | 2011-12-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10170244B2 (cg-RX-API-DMAC10.html) |
| DE (1) | DE112011106043T5 (cg-RX-API-DMAC10.html) |
| IN (1) | IN2014CN03385A (cg-RX-API-DMAC10.html) |
| TW (1) | TWI587330B (cg-RX-API-DMAC10.html) |
| WO (1) | WO2013100916A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9741881B2 (en) * | 2003-04-14 | 2017-08-22 | S'tile | Photovoltaic module including integrated photovoltaic cells |
| CN104025225B (zh) | 2011-11-03 | 2017-06-09 | 英特尔公司 | 储能结构、制造用于储能结构的支承结构的方法及包含储能结构的微电子组件和系统 |
| WO2013100916A1 (en) | 2011-12-27 | 2013-07-04 | Intel Corporation | Fabrication of porous silicon electrochemical capacitors |
| US9025313B2 (en) | 2012-08-13 | 2015-05-05 | Intel Corporation | Energy storage devices with at least one porous polycrystalline substrate |
| WO2014145559A2 (en) | 2013-03-15 | 2014-09-18 | Cleanvolt Energy, Inc. | Improved electrodes and currents through the use of organic and organometallic high dielectric constant materials in energy storage devices and associated methods |
| US10535466B1 (en) * | 2014-11-05 | 2020-01-14 | United States Of America As Represented By The Secretary Of The Navy | Super dielectric capacitor having electrically and ionically conducting electrodes |
| US10128057B2 (en) | 2015-10-28 | 2018-11-13 | Stmicroelectronics S.R.L. | Supercapacitor with movable separator and method of operating a supercapacitor |
| CN105655139B (zh) * | 2016-01-21 | 2018-05-25 | 东南大学 | 一种氧化钼/碳包覆氮化钛纳米管阵列复合材料及其制备方法和应用 |
| CN105655148B (zh) * | 2016-01-21 | 2018-02-02 | 东南大学 | 一种纳米多孔结构的氮化钛酸锂纳米线/纳米膜一体化材料及其制备方法和应用 |
| CN105719843B (zh) * | 2016-01-21 | 2018-05-04 | 东南大学 | 一种氮化钼/氮化钛纳米管阵列复合材料及其制备方法和应用 |
| DE102016202979A1 (de) * | 2016-02-25 | 2017-08-31 | Robert Bosch Gmbh | Hybridsuperkondensator |
| US10636583B2 (en) | 2017-02-14 | 2020-04-28 | Rolls-Royce Corporation | Material property capacitance sensor |
| NO343382B1 (en) | 2017-03-07 | 2019-02-18 | Univ College Of Southeast Norway | On-chip supercapacitor With Silicon nanostructure |
| CN110574132B (zh) | 2017-03-07 | 2022-12-09 | 挪威东南大学 | 用于片上超级电容器的蚀刻的硅上的沉积的碳膜 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
| US5508542A (en) * | 1994-10-28 | 1996-04-16 | International Business Machines Corporation | Porous silicon trench and capacitor structures |
| DE10242877A1 (de) * | 2002-09-16 | 2004-03-25 | Infineon Technologies Ag | Halbleitersubstrat sowie darin ausgebildete Halbleiterschaltung und zugehörige Herstellungsverfahren |
| IL153289A (en) * | 2002-12-05 | 2010-06-16 | Acktar Ltd | Electrodes for electrolytic capacitors and method for producing them |
| US7033703B2 (en) | 2002-12-20 | 2006-04-25 | Firefly Energy, Inc. | Composite material and current collector for battery |
| WO2005036574A1 (ja) | 2003-10-10 | 2005-04-21 | Japan Gore-Tex Inc. | 電気二重層キャパシタ用電極とその製造方法、および電気二重層キャパシタ、並びに導電性接着剤 |
| CA2616726C (en) | 2005-07-27 | 2015-06-02 | Cellergy Ltd. | Multilayered electrochemical energy storage device and method of manufacture thereof |
| JP4411331B2 (ja) * | 2007-03-19 | 2010-02-10 | 信越化学工業株式会社 | 磁気記録媒体用シリコン基板およびその製造方法 |
| US8526167B2 (en) * | 2009-09-03 | 2013-09-03 | Applied Materials, Inc. | Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications |
| JP5743353B2 (ja) | 2010-04-02 | 2015-07-01 | インテル・コーポレーション | 電荷蓄積デバイス、電荷蓄積デバイスを製造する方法、移動型電子デバイスおよびマイクロ電子デバイス |
| FR2963476B1 (fr) * | 2010-07-30 | 2012-08-24 | Centre Nat Rech Scient | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
| CN104025225B (zh) * | 2011-11-03 | 2017-06-09 | 英特尔公司 | 储能结构、制造用于储能结构的支承结构的方法及包含储能结构的微电子组件和系统 |
| WO2013100916A1 (en) | 2011-12-27 | 2013-07-04 | Intel Corporation | Fabrication of porous silicon electrochemical capacitors |
-
2011
- 2011-12-27 WO PCT/US2011/067434 patent/WO2013100916A1/en not_active Ceased
- 2011-12-27 DE DE112011106043.2T patent/DE112011106043T5/de not_active Withdrawn
- 2011-12-27 IN IN3385CHN2014 patent/IN2014CN03385A/en unknown
- 2011-12-27 US US13/997,881 patent/US10170244B2/en active Active
-
2012
- 2012-12-24 TW TW101149593A patent/TWI587330B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI587330B (zh) | 2017-06-11 |
| US20140233152A1 (en) | 2014-08-21 |
| DE112011106043T5 (de) | 2014-09-18 |
| US10170244B2 (en) | 2019-01-01 |
| WO2013100916A1 (en) | 2013-07-04 |
| TW201342406A (zh) | 2013-10-16 |
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