IN2013CH04799A - - Google Patents

Info

Publication number
IN2013CH04799A
IN2013CH04799A IN4799CH2013A IN2013CH04799A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A IN 4799CH2013 A IN4799CH2013 A IN 4799CH2013A IN 2013CH04799 A IN2013CH04799 A IN 2013CH04799A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Thevasahayam Arockiadoss
Original Assignee
Empire Technology Dev Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Empire Technology Dev Llc filed Critical Empire Technology Dev Llc
Priority to IN4799CH2013 priority Critical patent/IN2013CH04799A/en
Priority to US14/520,358 priority patent/US9914647B2/en
Publication of IN2013CH04799A publication Critical patent/IN2013CH04799A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/06—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0768—After-treatment, e.g. grinding, purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66—Current collectors
    • H01G11/68—Current collectors characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/01—Crystal-structural characteristics depicted by a TEM-image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/20—Two-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Photovoltaic Devices (AREA)
IN4799CH2013 2013-10-24 2013-10-24 IN2013CH04799A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IN4799CH2013 IN2013CH04799A (ko) 2013-10-24 2013-10-24
US14/520,358 US9914647B2 (en) 2013-10-24 2014-10-22 Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN4799CH2013 IN2013CH04799A (ko) 2013-10-24 2013-10-24

Publications (1)

Publication Number Publication Date
IN2013CH04799A true IN2013CH04799A (ko) 2015-05-08

Family

ID=52995168

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4799CH2013 IN2013CH04799A (ko) 2013-10-24 2013-10-24

Country Status (2)

Country Link
US (1) US9914647B2 (ko)
IN (1) IN2013CH04799A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102412965B1 (ko) * 2014-12-30 2022-06-24 삼성전자주식회사 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법
US9735227B2 (en) 2015-08-03 2017-08-15 Synopsys, Inc. 2D material super capacitors
CN106608652B (zh) * 2015-10-21 2018-01-09 中国科学院大连化学物理研究所 金属阳离子掺杂二硫化钼材料的制备方法及材料和应用
CN105329946A (zh) * 2015-11-16 2016-02-17 暨南大学 一种富活性位二硫化钼纳米片及其制备方法和应用
CN105449026A (zh) * 2016-01-08 2016-03-30 湖南师范大学 一种二硫化钼叠层太阳能电池及其制备方法
WO2017177168A1 (en) * 2016-04-07 2017-10-12 University Of North Texas Two-dimensional transition metal dichalcogenide micro-supercapacitors
WO2017210264A1 (en) 2016-06-03 2017-12-07 Ohio University Directed growth of electrically self-contacted monolayer transition metal dichalcogenides with lithographically defined metallic patterns
CN106328387A (zh) * 2016-08-31 2017-01-11 江苏大学 氮掺杂碳纳米管/二硫化钼纳米球复合材料及其制备方法
CN106517335B (zh) * 2016-10-21 2018-10-12 河南师范大学 一种单层二硫化钨纳米片的制备方法
CN108336151B (zh) * 2017-01-20 2020-12-04 清华大学 肖特基二极管、肖特基二极管阵列及肖特基二极管的制备方法
CN110240744B (zh) * 2019-05-05 2023-03-10 浙江太湖远大新材料股份有限公司 一种硅烷交联聚乙烯电缆绝缘材料
CN114345373A (zh) * 2020-09-27 2022-04-15 武汉理工大学 一种富含缺陷的掺氧二硫化钼纳米片析氢电催化剂的制备方法
US20240102196A1 (en) * 2020-11-13 2024-03-28 Board Of Regents, The University Of Texas System Systems and methods for thinning transition metal dichalcogenides
CN114457426B (zh) * 2021-11-22 2022-11-22 天津理工大学 Ti掺杂单层二硫化钼单晶及其制备方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9181486B2 (en) 2006-05-25 2015-11-10 Aspen Aerogels, Inc. Aerogel compositions with enhanced performance
GB0914816D0 (en) 2009-08-25 2009-09-30 Isis Innovation Method of fabrication of aligned nanotube-containing composites
FR2965569B1 (fr) * 2010-10-04 2019-06-14 X-Fab France Utilisation d'un procede de deposition par pulverisation cathodique d'une couche de chalcogenure
US8993113B2 (en) 2010-08-06 2015-03-31 Lawrence Livermore National Security, Llc Graphene aerogels
GB2483288A (en) 2010-09-03 2012-03-07 Trinity College Dublin Exfoliation process for forming semiconducting nanoflakes
GB201101482D0 (en) 2011-01-28 2011-03-16 Isis Innovation Exfoiation of lyered material
US9208919B2 (en) * 2012-02-03 2015-12-08 Massachusetts Institute Of Technology Aerogels and methods of making same
IN2013CH04797A (ko) * 2013-10-24 2015-05-08 Empire Technology Dev Llc

Also Published As

Publication number Publication date
US9914647B2 (en) 2018-03-13
US20150116906A1 (en) 2015-04-30

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