IN2012DN05898A - - Google Patents
Info
- Publication number
- IN2012DN05898A IN2012DN05898A IN5898DEN2012A IN2012DN05898A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A IN 5898DEN2012 A IN5898DEN2012 A IN 5898DEN2012A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A
- Authority
- IN
- India
- Prior art keywords
- absorber layer
- molybdenum
- semiconductor absorber
- molybdenum nitride
- depositing
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28806509P | 2009-12-18 | 2009-12-18 | |
| PCT/US2010/060201 WO2011075461A1 (en) | 2009-12-18 | 2010-12-14 | Photovoltaic device back contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN05898A true IN2012DN05898A (ko) | 2015-09-18 |
Family
ID=44149398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN5898DEN2012 IN2012DN05898A (ko) | 2009-12-18 | 2010-12-14 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20110146784A1 (ko) |
| IN (1) | IN2012DN05898A (ko) |
| WO (1) | WO2011075461A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2010004731A (es) | 2007-11-02 | 2010-05-21 | First Solar Inc | Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas. |
| US8759669B2 (en) * | 2011-01-14 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Barrier and planarization layer for thin-film photovoltaic cell |
| US9147793B2 (en) | 2011-06-20 | 2015-09-29 | Alliance For Sustainable Energy, Llc | CdTe devices and method of manufacturing same |
| US9780242B2 (en) | 2011-08-10 | 2017-10-03 | Ascent Solar Technologies, Inc. | Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates |
| CN103187457A (zh) * | 2011-12-27 | 2013-07-03 | 无锡尚德太阳能电力有限公司 | 碲化镉薄膜太阳电池、电池组件及其制备方法 |
| WO2014151610A1 (en) * | 2013-03-15 | 2014-09-25 | First Solar, Inc. | Photovoltaic device having improved back electrode and method of formation |
| WO2017079008A1 (en) * | 2015-11-04 | 2017-05-11 | Ascent Solar Technologies, Inc. | Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207348A (ja) * | 1982-05-28 | 1983-12-02 | Tanaka Kikinzoku Kogyo Kk | 封入用電気接点材料 |
| US4471004A (en) * | 1983-04-28 | 1984-09-11 | General Electric Company | Method of forming refractory metal conductors of low resistivity |
| JPH01120818A (ja) * | 1987-09-23 | 1989-05-12 | Siemens Ag | 低伝達抵抗オーム接触の形成方法 |
| PL173917B1 (pl) * | 1993-08-10 | 1998-05-29 | Ct Badan Wysokocisnieniowych P | Sposób wytwarzania krystalicznej struktury wielowarstwowej |
| GB9425334D0 (en) * | 1994-12-15 | 1995-02-15 | Philips Electronics Uk Ltd | Liquid crystal display device and apparatus including such |
| US5916375A (en) * | 1995-12-07 | 1999-06-29 | Japan Energy Corporation | Method of producing photoelectric conversion device |
| US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
| JP2001147424A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子 |
| US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| US20020144725A1 (en) * | 2001-04-10 | 2002-10-10 | Motorola, Inc. | Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure |
| KR100571819B1 (ko) * | 2003-10-16 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| US7935382B2 (en) * | 2005-12-20 | 2011-05-03 | Momentive Performance Materials, Inc. | Method for making crystalline composition |
| US8154493B2 (en) * | 2006-06-02 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, driving method of the same, and electronic device using the same |
| US9147778B2 (en) * | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| WO2010141461A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Doped metal contact |
| US20100307568A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Metal barrier-doped metal contact layer |
| WO2010141463A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Dopant-containing contact material |
-
2010
- 2010-12-14 WO PCT/US2010/060201 patent/WO2011075461A1/en active Application Filing
- 2010-12-14 IN IN5898DEN2012 patent/IN2012DN05898A/en unknown
- 2010-12-16 US US12/970,793 patent/US20110146784A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011075461A1 (en) | 2011-06-23 |
| US20110146784A1 (en) | 2011-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IN2012DN05898A (ko) | ||
| SG149774A1 (en) | Buried contact devices for nitride-based films and manufacture therof | |
| EP2534699A4 (en) | Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting element and manufacturing method thereof | |
| MX2010004731A (es) | Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas. | |
| WO2012044978A3 (en) | High efficiency solar cell device with gallium arsenide absorber layer | |
| EP2590233A3 (en) | Photovoltaic device and method of manufacturing the same | |
| EP2410580A4 (en) | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING THE GROUP III NITRIDE SEMICONDUCTOR DEVICE | |
| WO2012021227A3 (en) | Heterojunction solar cell | |
| WO2011109058A3 (en) | Method of fabricating a back-contact solar cell and device thereof | |
| MY157221A (en) | Photovoltaic devices including an interfacial layer | |
| TW200638555A (en) | Solar cell and semiconductor device, and manufacturing method thereof | |
| EP2541617A4 (en) | SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL | |
| WO2010019532A3 (en) | Compositions and processes for forming photovoltaic devices | |
| EP2377839A4 (en) | METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE | |
| WO2011156486A3 (en) | Transparent conducting oxide for photovoltaic devices | |
| WO2011025266A3 (ko) | 고전위 밀도의 중간층을 갖는 발광 다이오드 및 그것을 제조하는 방법 | |
| GB2495166A (en) | Single-junction photovoltaic cell | |
| WO2010151224A8 (en) | A phase shifting device and a method for manufacturing the same | |
| WO2014196860A3 (en) | Photovoltaic cell and method for manufacturing such a photovoltaic cell | |
| GB201108160D0 (en) | Device | |
| WO2012040013A3 (en) | Photovoltaic device containing an n-type dopant source | |
| WO2010085439A3 (en) | Self-aligned selective emitter formed by counterdoping | |
| GB2514711A (en) | Power semiconductor device and method for manufacturing thereof | |
| WO2014044871A3 (fr) | Cellule photovoltaique a heterojonction et procede de fabrication d'une telle cellule | |
| WO2011022687A3 (en) | Laser processed heterojunction photovoltaic devices and associated methods |