IN2012DN04976A - - Google Patents

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Publication number
IN2012DN04976A
IN2012DN04976A IN4976DEN2012A IN2012DN04976A IN 2012DN04976 A IN2012DN04976 A IN 2012DN04976A IN 4976DEN2012 A IN4976DEN2012 A IN 4976DEN2012A IN 2012DN04976 A IN2012DN04976 A IN 2012DN04976A
Authority
IN
India
Prior art keywords
output
circuit
signal
limiting
transistor
Prior art date
Application number
Other languages
English (en)
Inventor
Rolf Reber
Patrick Schuh
Original Assignee
Eads Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eads Deutschland Gmbh filed Critical Eads Deutschland Gmbh
Publication of IN2012DN04976A publication Critical patent/IN2012DN04976A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/04—Limiting level dependent on strength of signal; Limiting level dependent on strength of carrier on which signal is modulated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/441—Protection of an amplifier being implemented by clamping means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/66—Clipping circuitry being present in an amplifier, i.e. the shape of the signal being modified

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
IN4976DEN2012 2009-12-09 2010-11-25 IN2012DN04976A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200910057544 DE102009057544A1 (de) 2009-12-09 2009-12-09 Begrenzerschaltung
PCT/DE2010/001387 WO2011069479A1 (de) 2009-12-09 2010-11-25 Begrenzerschaltung

Publications (1)

Publication Number Publication Date
IN2012DN04976A true IN2012DN04976A (de) 2015-09-25

Family

ID=43741922

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4976DEN2012 IN2012DN04976A (de) 2009-12-09 2010-11-25

Country Status (6)

Country Link
US (1) US9093972B2 (de)
EP (1) EP2510617A1 (de)
JP (1) JP2013513978A (de)
DE (1) DE102009057544A1 (de)
IN (1) IN2012DN04976A (de)
WO (1) WO2011069479A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3013536B1 (fr) * 2013-11-18 2016-01-01 Thales Sa Limiteur de puissance radiofrequence ameliore; chaine d'emission et/ou de reception radiofrequence et etage d'amplification faible bruit associes 

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233453A (en) * 1975-09-10 1977-03-14 Nec Corp High frequency high output transistor amplifier
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US5121176A (en) * 1990-02-01 1992-06-09 Quigg Fred L MOSFET structure having reduced gate capacitance
US5157289A (en) 1991-07-29 1992-10-20 Grumman Aerospace Corporation FET adaptive limiter with high current FET detector
US5301081A (en) * 1992-07-16 1994-04-05 Pacific Monolithics Input protection circuit
US5608353A (en) * 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
JPH10247828A (ja) * 1997-03-04 1998-09-14 Mitsubishi Electric Corp リミタアンプ
JPH10322141A (ja) * 1997-05-20 1998-12-04 Matsushita Electric Ind Co Ltd 高周波電力増幅器およびそれを用いた無線通信装置
US6100763A (en) * 1999-03-29 2000-08-08 Motorola, Inc. Circuit for RF buffer and method of operation
KR100759508B1 (ko) * 2000-08-01 2007-09-18 정연문 귀환루프를 갖는 고주파 발진 회로
JP4512971B2 (ja) * 2001-03-02 2010-07-28 株式会社日立プラズマパテントライセンシング 表示駆動装置
WO2003098795A1 (en) * 2002-05-22 2003-11-27 Koninklijke Philips Electronics N.V. Rf power amplifier
US6747484B1 (en) 2003-04-22 2004-06-08 Raytheon Company Radio frequency limiter circuit
KR100663450B1 (ko) * 2003-05-19 2007-01-02 삼성전자주식회사 집적 가능한 전압조정 초고주파 전력 증폭기
US7348852B1 (en) * 2004-11-08 2008-03-25 Anadigies, Inc. Device and method for power amplifier noise reduction
EP1906532B1 (de) * 2006-07-05 2008-11-05 Infineon Technologies AG MOS-Transistorschaltung mit gesteuerter Anstiegszeit
JP2008251755A (ja) 2007-03-30 2008-10-16 Eudyna Devices Inc 半導体装置

Also Published As

Publication number Publication date
US9093972B2 (en) 2015-07-28
DE102009057544A1 (de) 2011-06-16
US20120281325A1 (en) 2012-11-08
WO2011069479A1 (de) 2011-06-16
EP2510617A1 (de) 2012-10-17
JP2013513978A (ja) 2013-04-22

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