IN191309B - - Google Patents

Info

Publication number
IN191309B
IN191309B IN2082CA1996A IN191309B IN 191309 B IN191309 B IN 191309B IN 2082CA1996 A IN2082CA1996 A IN 2082CA1996A IN 191309 B IN191309 B IN 191309B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Holger Sedlak
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN191309B publication Critical patent/IN191309B/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/213Design considerations for internal polarisation in field-effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Control Of Eletrric Generators (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Indole Compounds (AREA)
  • Furan Compounds (AREA)
  • Plural Heterocyclic Compounds (AREA)
IN2082CA1996 1995-12-06 1996-12-03 IN191309B (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19545558A DE19545558C2 (de) 1995-12-06 1995-12-06 Verfahren zur Ansteuerung eines Feldeffekttransistors

Publications (1)

Publication Number Publication Date
IN191309B true IN191309B (cs) 2003-11-15

Family

ID=7779375

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2082CA1996 IN191309B (cs) 1995-12-06 1996-12-03

Country Status (8)

Country Link
US (1) US5999035A (cs)
EP (1) EP0808512B1 (cs)
JP (1) JPH11500296A (cs)
CN (1) CN1084051C (cs)
AT (1) ATE305172T1 (cs)
DE (2) DE19545558C2 (cs)
IN (1) IN191309B (cs)
WO (1) WO1997021241A2 (cs)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599990B2 (ja) * 1978-07-25 1984-03-06 超エル・エス・アイ技術研究組合 半導体記憶装置
KR930003929B1 (ko) * 1990-08-09 1993-05-15 삼성전자 주식회사 데이타 출력버퍼
JPH0812754B2 (ja) * 1990-08-20 1996-02-07 富士通株式会社 昇圧回路
US5220528A (en) * 1990-11-19 1993-06-15 Intel Corporation Compensation circuit for leakage in flash EPROM

Also Published As

Publication number Publication date
DE19545558C2 (de) 2002-06-27
DE19545558A1 (de) 1997-06-12
CN1084051C (zh) 2002-05-01
DE59611274D1 (de) 2006-02-02
US5999035A (en) 1999-12-07
EP0808512B1 (de) 2005-09-21
CN1179233A (zh) 1998-04-15
WO1997021241A2 (de) 1997-06-12
ATE305172T1 (de) 2005-10-15
JPH11500296A (ja) 1999-01-06
WO1997021241A3 (de) 1997-08-07
EP0808512A2 (de) 1997-11-26

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