Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
  • H10D84/85—Complementary IGFETs, e.g. CMOS
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
  • H10D84/85—Complementary IGFETs, e.g. CMOS
  • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Applications Claiming Priority (1)

Publications (1)

Family

ID=7779372

Family Applications (1)

Country Status (10)

Family Cites Families (11)

• 1995
  • 1995-12-06 DE DE19545554A patent/DE19545554A1/de not_active Withdrawn
• 1996
  • 1996-11-18 CN CNB961997869A patent/CN1230903C/zh not_active Expired - Lifetime
  • 1996-11-18 RU RU98112593/28A patent/RU2170475C2/ru not_active IP Right Cessation
  • 1996-11-18 EP EP96945730A patent/EP0865669A2/de not_active Ceased
  • 1996-11-18 UA UA98062924A patent/UA56148C2/uk unknown
  • 1996-11-18 WO PCT/DE1996/002189 patent/WO1997021240A2/de not_active Ceased
  • 1996-11-18 US US09/091,152 patent/US6160295A/en not_active Expired - Lifetime
  • 1996-11-18 KR KR10-1998-0704162A patent/KR100415129B1/ko not_active Expired - Fee Related
  • 1996-11-18 JP JP52084597A patent/JP3357069B2/ja not_active Expired - Fee Related
  • 1996-12-02 IN IN2071CA1996 patent/IN190506B/en unknown

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