IN171365B - - Google Patents

Info

Publication number
IN171365B
IN171365B IN712/DEL/87A IN712DE1987A IN171365B IN 171365 B IN171365 B IN 171365B IN 712DE1987 A IN712DE1987 A IN 712DE1987A IN 171365 B IN171365 B IN 171365B
Authority
IN
India
Application number
IN712/DEL/87A
Other languages
English (en)
Inventor
Prem Nath
Craig Vogeli
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN171365B publication Critical patent/IN171365B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging
IN712/DEL/87A 1986-09-15 1987-08-17 IN171365B (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/907,425 US4729970A (en) 1986-09-15 1986-09-15 Conversion process for passivating short circuit current paths in semiconductor devices

Publications (1)

Publication Number Publication Date
IN171365B true IN171365B (cg-RX-API-DMAC10.html) 1992-09-26

Family

ID=25424075

Family Applications (1)

Application Number Title Priority Date Filing Date
IN712/DEL/87A IN171365B (cg-RX-API-DMAC10.html) 1986-09-15 1987-08-17

Country Status (8)

Country Link
US (1) US4729970A (cg-RX-API-DMAC10.html)
EP (1) EP0260821B1 (cg-RX-API-DMAC10.html)
JP (1) JP2674622B2 (cg-RX-API-DMAC10.html)
AT (1) ATE78365T1 (cg-RX-API-DMAC10.html)
CA (1) CA1264869A (cg-RX-API-DMAC10.html)
DE (1) DE3780386T2 (cg-RX-API-DMAC10.html)
ES (1) ES2033857T3 (cg-RX-API-DMAC10.html)
IN (1) IN171365B (cg-RX-API-DMAC10.html)

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US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
US5084400A (en) * 1988-09-12 1992-01-28 Energy Conversion Devices Inc. Conversion process for passivating short circuit current paths in electronic devices having a metallic electrode
US5055416A (en) * 1988-12-07 1991-10-08 Minnesota Mining And Manufacturing Company Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
AU2549392A (en) * 1991-09-13 1993-04-27 United Solar Systems Corporation Photovoltaic device including shunt preventing layer and method for the deposition thereof
US5268039A (en) * 1991-09-13 1993-12-07 United Solar Systems Corporation Photovoltaic device including shunt preventing layer and method for the deposition thereof
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
JP2915321B2 (ja) * 1995-05-16 1999-07-05 キヤノン株式会社 直列接続光起電力素子アレーの製造方法
JP3387741B2 (ja) * 1995-07-19 2003-03-17 キヤノン株式会社 半導体素子用保護材、該保護材を有する半導体素子、該素子を有する半導体装置
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
CN1235271C (zh) * 1995-10-17 2006-01-04 佳能株式会社 生产半导体器件的工艺
JPH09115978A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の評価方法
EP0784348B1 (en) 1996-01-10 2003-06-25 Canon Kabushiki Kaisha Solar cell module having a specific surface side cover excelling in moisture resistance and transparency
US5859397A (en) * 1996-05-17 1999-01-12 Canon Kabushiki Kaisha Process for the production of a photovoltaic element
TW400554B (en) * 1997-07-25 2000-08-01 United Microelectronics Corp The removing method for the thin film layer involved in the semiconductor device
US6430810B1 (en) 1997-10-28 2002-08-13 Uniax Corporation Mechanical scribing methods of forming a patterned metal layer in an electronic device
AU743134B2 (en) 1997-12-03 2002-01-17 Canon Kabushiki Kaisha Method of producing photovoltaic element
US6414236B1 (en) 1999-06-30 2002-07-02 Canon Kabushiki Kaisha Solar cell module
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
DE10393792T5 (de) * 2002-11-27 2005-11-03 The University Of Toledo, Toledo Integrierte photoelektrochemische Zelle und System mit einem flüssigen Elektrolyten
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US7317566B2 (en) * 2005-08-29 2008-01-08 Teledyne Licensing, Llc Electrode with transparent series resistance for uniform switching of optical modulation devices
US7256140B2 (en) * 2005-09-20 2007-08-14 United Solar Ovonic Llc Higher selectivity, method for passivating short circuit current paths in semiconductor devices
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
JP5135904B2 (ja) * 2007-06-19 2013-02-06 株式会社日立製作所 有機薄膜トランジスタアレイおよびその製造方法
US20100304512A1 (en) * 2007-11-30 2010-12-02 University Of Toledo System for Diagnosis and Treatment of Photovoltaic and Other Semiconductor Devices
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
EP2159583A1 (en) * 2008-08-29 2010-03-03 ODERSUN Aktiengesellschaft System and method for localizing and passivating defects in a photovoltaic element
DE102008043720A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Formmassen zur Herstellung von Solarzellenmodulen
DE102008043707A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Herstellung von Solarzellenmodulen
DE102008043719A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Formmassen zur Herstellung von Solarzellenmodulen
DE102008043713A1 (de) 2008-11-13 2010-05-20 Evonik Röhm Gmbh Herstellung von Solarzellenmodulen
US8318239B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus for detecting and passivating defects in thin film solar cells
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
WO2011075579A1 (en) * 2009-12-18 2011-06-23 First Solar, Inc. Photovoltaic device including doped layer
MX2012013614A (es) 2010-05-26 2013-03-20 Univ Toledo Estructuras fotovoltaicas que tienen una capa de interfaz de difraccion de luz y metodos para fabricar las mismas.
US9214576B2 (en) * 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
DE102010030508A1 (de) 2010-06-25 2011-12-29 Evonik Röhm Gmbh Herstellung von Solarzellenmodulen
WO2012021593A1 (en) * 2010-08-13 2012-02-16 First Solar, Inc. Photovoltaic device with oxide layer
KR101283113B1 (ko) * 2011-12-09 2013-07-05 엘지이노텍 주식회사 태양전지 모듈 및 이의 제조방법
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
FR3037723B1 (fr) * 2015-06-16 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un empilement du type premiere electrode / couche active / deuxieme electrode.
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
EP3869568A1 (en) * 2020-02-20 2021-08-25 NICE Solar Energy GmbH Method of patterning a thin-film photovoltaic layer stack

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131975A (en) * 1980-03-19 1981-10-15 Matsushita Electric Ind Co Ltd Manufacture of solid image photographing plate
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
DE3312053C2 (de) * 1983-04-02 1985-03-28 Nukem Gmbh, 6450 Hanau Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle
JPS6085576A (ja) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd 薄膜光電変換素子の製造方法
JPS6085578A (ja) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd 薄膜光電変換素子の製造方法
JPS614284A (ja) * 1984-06-18 1986-01-10 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPS6258685A (ja) * 1985-09-09 1987-03-14 Fuji Electric Co Ltd 非晶質半導体太陽電池の製造方法
GB8531445D0 (en) * 1985-12-20 1986-02-05 Gen Electric Co Plc Thin films

Also Published As

Publication number Publication date
EP0260821A3 (en) 1988-11-02
DE3780386D1 (de) 1992-08-20
EP0260821B1 (en) 1992-07-15
ES2033857T3 (es) 1993-04-01
ATE78365T1 (de) 1992-08-15
CA1264869A (en) 1990-01-23
DE3780386T2 (de) 1993-01-28
JP2674622B2 (ja) 1997-11-12
JPS6376442A (ja) 1988-04-06
EP0260821A2 (en) 1988-03-23
US4729970A (en) 1988-03-08

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