IN171016B - - Google Patents
Info
- Publication number
- IN171016B IN171016B IN703/DEL/87A IN703DE1987A IN171016B IN 171016 B IN171016 B IN 171016B IN 703DE1987 A IN703DE1987 A IN 703DE1987A IN 171016 B IN171016 B IN 171016B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F210/00—Copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
- C08F210/02—Ethene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/903,022 US4749640A (en) | 1986-09-02 | 1986-09-02 | Integrated circuit manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN171016B true IN171016B (ja) | 1992-07-04 |
Family
ID=25416802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN703/DEL/87A IN171016B (ja) | 1986-09-02 | 1987-08-12 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US4749640A (ja) |
| EP (1) | EP0259985A3 (ja) |
| KR (1) | KR880004543A (ja) |
| CN (1) | CN1006506B (ja) |
| AU (1) | AU587341B2 (ja) |
| BR (1) | BR8704508A (ja) |
| CA (1) | CA1264870A (ja) |
| DK (1) | DK423587A (ja) |
| FI (1) | FI873795A (ja) |
| IL (1) | IL83547A0 (ja) |
| IN (1) | IN171016B (ja) |
| MY (1) | MY100556A (ja) |
| NO (1) | NO873670L (ja) |
| PH (1) | PH24686A (ja) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181985A (en) * | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
| US4900336A (en) * | 1989-04-03 | 1990-02-13 | Arrowhead Industrial Water, Inc. | Method of preferentially removing oxygen from ozonated water |
| US5190627A (en) * | 1989-11-07 | 1993-03-02 | Ebara Corporation | Process for removing dissolved oxygen from water and system therefor |
| US5378317A (en) * | 1990-10-09 | 1995-01-03 | Chlorine Engineers Corp., Ltd. | Method for removing organic film |
| JP3152430B2 (ja) * | 1990-10-09 | 2001-04-03 | クロリンエンジニアズ株式会社 | 有機物被膜の除去方法 |
| DE69325043T2 (de) * | 1992-02-07 | 2000-05-25 | Tadahiro Ohmi | Lithographischer Entwickler und lithographisches Verfahren |
| US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
| DE69321627T2 (de) * | 1992-02-10 | 1999-04-22 | Tadahiro Ohmi Sendai | Lithographisches Verfahren |
| US5565378A (en) * | 1992-02-17 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution |
| KR970008354B1 (ko) * | 1994-01-12 | 1997-05-23 | 엘지반도체 주식회사 | 선택적 식각방법 |
| JP2914555B2 (ja) * | 1994-08-30 | 1999-07-05 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄方法 |
| DE4432738A1 (de) * | 1994-09-14 | 1996-03-21 | Siemens Ag | Verfahren zum naßchemischen Entfernen von Kontaminationen auf Halbleiterkristalloberflächen |
| US6127279A (en) * | 1994-09-26 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying method |
| US5674357A (en) * | 1995-08-30 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor substrate cleaning process |
| KR970023890A (ja) * | 1995-10-05 | 1997-05-30 | ||
| US6245155B1 (en) * | 1996-09-06 | 2001-06-12 | Arch Specialty Chemicals, Inc. | Method for removing photoresist and plasma etch residues |
| US5803980A (en) * | 1996-10-04 | 1998-09-08 | Texas Instruments Incorporated | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue |
| DE19701971C1 (de) * | 1997-01-22 | 1998-11-26 | Invent Gmbh Entwicklung Neuer Technologien | Verfahren und Vorrichtung zur Reinigung von Substratoberflächen |
| US5882425A (en) * | 1997-01-23 | 1999-03-16 | Semitool, Inc. | Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching |
| US5971368A (en) | 1997-10-29 | 1999-10-26 | Fsi International, Inc. | System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized |
| US6100198A (en) * | 1998-02-27 | 2000-08-08 | Micron Technology, Inc. | Post-planarization, pre-oxide removal ozone treatment |
| US6183637B1 (en) | 1998-07-23 | 2001-02-06 | Seh America, Inc. | Resin trap device for use in ultrapure water systems and method of purifying water using same |
| US6235641B1 (en) | 1998-10-30 | 2001-05-22 | Fsi International Inc. | Method and system to control the concentration of dissolved gas in a liquid |
| US6406551B1 (en) | 1999-05-14 | 2002-06-18 | Fsi International, Inc. | Method for treating a substrate with heat sensitive agents |
| US6790783B1 (en) * | 1999-05-27 | 2004-09-14 | Micron Technology, Inc. | Semiconductor fabrication apparatus |
| US6408535B1 (en) | 1999-08-26 | 2002-06-25 | Semitool, Inc. | Ozone conversion in semiconductor manufacturing |
| US6805791B2 (en) * | 2000-09-01 | 2004-10-19 | Applied Science And Technology, Inc. | Ozonated water flow and concentration control apparatus |
| US6387804B1 (en) | 2000-09-19 | 2002-05-14 | Advanced Micro Devices, Inc. | Passivation of sidewall spacers using ozonated water |
| TW541584B (en) * | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
| US6812064B2 (en) * | 2001-11-07 | 2004-11-02 | Micron Technology, Inc. | Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate |
| US7365403B1 (en) * | 2002-02-13 | 2008-04-29 | Cypress Semiconductor Corp. | Semiconductor topography including a thin oxide-nitride stack and method for making the same |
| US7502114B2 (en) * | 2004-03-12 | 2009-03-10 | Mks Instruments, Inc. | Ozone concentration sensor |
| US20060011214A1 (en) * | 2004-07-09 | 2006-01-19 | Zhi Liu | System and method for pre-gate cleaning of substrates |
| JP5251184B2 (ja) * | 2008-03-14 | 2013-07-31 | 栗田工業株式会社 | ガス溶解水供給システム |
| CN101752213B (zh) * | 2008-12-08 | 2011-09-07 | 北京有色金属研究总院 | 一种消除硅片表面水雾的低温热处理工艺 |
| US9627534B1 (en) * | 2015-11-20 | 2017-04-18 | United Microelectronics Corp. | Semiconductor MOS device having a dense oxide film on a spacer |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3066050A (en) * | 1960-03-23 | 1962-11-27 | Philco Corp | Fabrication of semiconductor devices |
| US3705055A (en) * | 1970-09-18 | 1972-12-05 | Western Electric Co | Method of descumming photoresist patterns |
| US3890176A (en) * | 1972-08-18 | 1975-06-17 | Gen Electric | Method for removing photoresist from substrate |
| US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
| DE2316097A1 (de) * | 1973-03-30 | 1974-10-17 | Siemens Ag | Verfahren zur nachbehandlung von siliziumkoerpern mit geaetzter oxydschicht |
| US4156619A (en) * | 1975-06-11 | 1979-05-29 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for cleaning semi-conductor discs |
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
| US4129457A (en) * | 1977-05-23 | 1978-12-12 | International Business Machines Corporation | Post-polishing cleaning of semiconductor surfaces |
| DE2928324A1 (de) * | 1979-07-13 | 1981-01-29 | Coolbox Vertriebsgesellschaft | Einrichtung zur messung von ozon in wasser |
| US4318749A (en) * | 1980-06-23 | 1982-03-09 | Rca Corporation | Wettable carrier in gas drying system for wafers |
| JPS5953842A (ja) * | 1982-09-22 | 1984-03-28 | Seiko Epson Corp | 写真処理法 |
| US4443295A (en) * | 1983-06-13 | 1984-04-17 | Fairchild Camera & Instrument Corp. | Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2 |
| JPS60239028A (ja) * | 1984-05-11 | 1985-11-27 | Nec Corp | 表面清浄化方法 |
| JPS614232A (ja) * | 1984-06-19 | 1986-01-10 | Nec Corp | 半導体基板の洗浄方法 |
| US4595498A (en) * | 1984-12-27 | 1986-06-17 | Thomson Components-Mostek Corporation | Water-polishing loop |
-
1986
- 1986-09-02 US US06/903,022 patent/US4749640A/en not_active Expired - Fee Related
-
1987
- 1987-08-11 CA CA000544260A patent/CA1264870A/en not_active Expired - Fee Related
- 1987-08-12 IN IN703/DEL/87A patent/IN171016B/en unknown
- 1987-08-13 DK DK423587A patent/DK423587A/da not_active Application Discontinuation
- 1987-08-13 AU AU76833/87A patent/AU587341B2/en not_active Ceased
- 1987-08-14 IL IL83547A patent/IL83547A0/xx unknown
- 1987-08-14 EP EP87307183A patent/EP0259985A3/en not_active Withdrawn
- 1987-08-25 PH PH35733A patent/PH24686A/en unknown
- 1987-08-27 KR KR870009395A patent/KR880004543A/ko not_active Application Discontinuation
- 1987-08-28 MY MYPI87001474A patent/MY100556A/en unknown
- 1987-09-01 BR BR8704508A patent/BR8704508A/pt unknown
- 1987-09-01 NO NO873670A patent/NO873670L/no unknown
- 1987-09-01 FI FI873795A patent/FI873795A/fi not_active Application Discontinuation
- 1987-09-01 CN CN87106114A patent/CN1006506B/zh not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0259985A2 (en) | 1988-03-16 |
| KR880004543A (ko) | 1988-06-04 |
| CN1006506B (zh) | 1990-01-17 |
| IL83547A0 (en) | 1988-01-31 |
| DK423587D0 (da) | 1987-08-13 |
| NO873670D0 (no) | 1987-09-01 |
| CN87106114A (zh) | 1988-05-04 |
| MY100556A (en) | 1990-11-15 |
| DK423587A (da) | 1988-03-03 |
| EP0259985A3 (en) | 1990-05-30 |
| FI873795A0 (fi) | 1987-09-01 |
| FI873795A (fi) | 1988-03-03 |
| BR8704508A (pt) | 1988-04-19 |
| AU587341B2 (en) | 1989-08-10 |
| PH24686A (en) | 1990-09-07 |
| AU7683387A (en) | 1988-03-10 |
| US4749640A (en) | 1988-06-07 |
| CA1264870A (en) | 1990-01-23 |
| NO873670L (no) | 1988-03-03 |