IN171016B - - Google Patents

Info

Publication number
IN171016B
IN171016B IN703/DEL/87A IN703DE1987A IN171016B IN 171016 B IN171016 B IN 171016B IN 703DE1987 A IN703DE1987 A IN 703DE1987A IN 171016 B IN171016 B IN 171016B
Authority
IN
India
Application number
IN703/DEL/87A
Other languages
English (en)
Inventor
Peter Louis Trenont
Arthur John Ackermann
Original Assignee
Arrowhead Ind Water
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arrowhead Ind Water filed Critical Arrowhead Ind Water
Publication of IN171016B publication Critical patent/IN171016B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F210/00—Copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
    • C08F210/02—Ethene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
IN703/DEL/87A 1986-09-02 1987-08-12 IN171016B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/903,022 US4749640A (en) 1986-09-02 1986-09-02 Integrated circuit manufacturing process

Publications (1)

Publication Number Publication Date
IN171016B true IN171016B (ja) 1992-07-04

Family

ID=25416802

Family Applications (1)

Application Number Title Priority Date Filing Date
IN703/DEL/87A IN171016B (ja) 1986-09-02 1987-08-12

Country Status (14)

Country Link
US (1) US4749640A (ja)
EP (1) EP0259985A3 (ja)
KR (1) KR880004543A (ja)
CN (1) CN1006506B (ja)
AU (1) AU587341B2 (ja)
BR (1) BR8704508A (ja)
CA (1) CA1264870A (ja)
DK (1) DK423587A (ja)
FI (1) FI873795A (ja)
IL (1) IL83547A0 (ja)
IN (1) IN171016B (ja)
MY (1) MY100556A (ja)
NO (1) NO873670L (ja)
PH (1) PH24686A (ja)

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* Cited by examiner, † Cited by third party
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US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US4900336A (en) * 1989-04-03 1990-02-13 Arrowhead Industrial Water, Inc. Method of preferentially removing oxygen from ozonated water
US5190627A (en) * 1989-11-07 1993-03-02 Ebara Corporation Process for removing dissolved oxygen from water and system therefor
US5378317A (en) * 1990-10-09 1995-01-03 Chlorine Engineers Corp., Ltd. Method for removing organic film
JP3152430B2 (ja) * 1990-10-09 2001-04-03 クロリンエンジニアズ株式会社 有機物被膜の除去方法
EP0555098B1 (en) * 1992-02-07 1999-05-26 Tadahiro Ohmi Lithographic developer and lithographic process
US6007970A (en) * 1992-02-07 1999-12-28 Canon Kabushiki Kaisha Lithographic developer containing surfactant
DE69321627T2 (de) * 1992-02-10 1999-04-22 Canon K.K., Tokio/Tokyo Lithographisches Verfahren
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
JP2914555B2 (ja) * 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
DE4432738A1 (de) * 1994-09-14 1996-03-21 Siemens Ag Verfahren zum naßchemischen Entfernen von Kontaminationen auf Halbleiterkristalloberflächen
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
US5674357A (en) * 1995-08-30 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor substrate cleaning process
KR970023890A (ja) * 1995-10-05 1997-05-30
US6245155B1 (en) * 1996-09-06 2001-06-12 Arch Specialty Chemicals, Inc. Method for removing photoresist and plasma etch residues
US5803980A (en) * 1996-10-04 1998-09-08 Texas Instruments Incorporated De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue
DE19701971C1 (de) * 1997-01-22 1998-11-26 Invent Gmbh Entwicklung Neuer Technologien Verfahren und Vorrichtung zur Reinigung von Substratoberflächen
US5882425A (en) * 1997-01-23 1999-03-16 Semitool, Inc. Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6100198A (en) * 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
US6183637B1 (en) * 1998-07-23 2001-02-06 Seh America, Inc. Resin trap device for use in ultrapure water systems and method of purifying water using same
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6790783B1 (en) * 1999-05-27 2004-09-14 Micron Technology, Inc. Semiconductor fabrication apparatus
US6408535B1 (en) 1999-08-26 2002-06-25 Semitool, Inc. Ozone conversion in semiconductor manufacturing
US6805791B2 (en) * 2000-09-01 2004-10-19 Applied Science And Technology, Inc. Ozonated water flow and concentration control apparatus
US6387804B1 (en) 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. Passivation of sidewall spacers using ozonated water
TW541584B (en) * 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate
US7365403B1 (en) 2002-02-13 2008-04-29 Cypress Semiconductor Corp. Semiconductor topography including a thin oxide-nitride stack and method for making the same
US7502114B2 (en) * 2004-03-12 2009-03-10 Mks Instruments, Inc. Ozone concentration sensor
WO2006017108A2 (en) * 2004-07-09 2006-02-16 Akrion, Llc System and method for pre-gate cleaning of substrates
JP5251184B2 (ja) * 2008-03-14 2013-07-31 栗田工業株式会社 ガス溶解水供給システム
CN101752213B (zh) * 2008-12-08 2011-09-07 北京有色金属研究总院 一种消除硅片表面水雾的低温热处理工艺
US9627534B1 (en) * 2015-11-20 2017-04-18 United Microelectronics Corp. Semiconductor MOS device having a dense oxide film on a spacer

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US3066050A (en) * 1960-03-23 1962-11-27 Philco Corp Fabrication of semiconductor devices
US3705055A (en) * 1970-09-18 1972-12-05 Western Electric Co Method of descumming photoresist patterns
US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
DE2316097A1 (de) * 1973-03-30 1974-10-17 Siemens Ag Verfahren zur nachbehandlung von siliziumkoerpern mit geaetzter oxydschicht
US4156619A (en) * 1975-06-11 1979-05-29 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for cleaning semi-conductor discs
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4129457A (en) * 1977-05-23 1978-12-12 International Business Machines Corporation Post-polishing cleaning of semiconductor surfaces
DE2928324A1 (de) * 1979-07-13 1981-01-29 Coolbox Vertriebsgesellschaft Einrichtung zur messung von ozon in wasser
US4318749A (en) * 1980-06-23 1982-03-09 Rca Corporation Wettable carrier in gas drying system for wafers
JPS5953842A (ja) * 1982-09-22 1984-03-28 Seiko Epson Corp 写真処理法
US4443295A (en) * 1983-06-13 1984-04-17 Fairchild Camera & Instrument Corp. Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2
JPS60239028A (ja) * 1984-05-11 1985-11-27 Nec Corp 表面清浄化方法
JPS614232A (ja) * 1984-06-19 1986-01-10 Nec Corp 半導体基板の洗浄方法
US4595498A (en) * 1984-12-27 1986-06-17 Thomson Components-Mostek Corporation Water-polishing loop

Also Published As

Publication number Publication date
CN1006506B (zh) 1990-01-17
CN87106114A (zh) 1988-05-04
AU7683387A (en) 1988-03-10
DK423587A (da) 1988-03-03
DK423587D0 (da) 1987-08-13
NO873670L (no) 1988-03-03
FI873795A0 (fi) 1987-09-01
BR8704508A (pt) 1988-04-19
NO873670D0 (no) 1987-09-01
CA1264870A (en) 1990-01-23
MY100556A (en) 1990-11-15
US4749640A (en) 1988-06-07
EP0259985A2 (en) 1988-03-16
FI873795A (fi) 1988-03-03
AU587341B2 (en) 1989-08-10
EP0259985A3 (en) 1990-05-30
IL83547A0 (en) 1988-01-31
PH24686A (en) 1990-09-07
KR880004543A (ko) 1988-06-04

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