IN170025B - - Google Patents

Info

Publication number
IN170025B
IN170025B IN407/MAS/87A IN407MA1987A IN170025B IN 170025 B IN170025 B IN 170025B IN 407MA1987 A IN407MA1987 A IN 407MA1987A IN 170025 B IN170025 B IN 170025B
Authority
IN
India
Application number
IN407/MAS/87A
Other languages
English (en)
Inventor
Richard L Jacobson
Frank R Jeffrey
Roger K Westerberg
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of IN170025B publication Critical patent/IN170025B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
IN407/MAS/87A 1986-06-23 1987-06-03 IN170025B (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87716186A 1986-06-23 1986-06-23

Publications (1)

Publication Number Publication Date
IN170025B true IN170025B (el) 1992-01-25

Family

ID=25369390

Family Applications (1)

Application Number Title Priority Date Filing Date
IN407/MAS/87A IN170025B (el) 1986-06-23 1987-06-03

Country Status (7)

Country Link
EP (1) EP0258966B1 (el)
JP (1) JPS634059A (el)
KR (1) KR960001033B1 (el)
CN (1) CN1020045C (el)
DE (1) DE3781748T2 (el)
IL (1) IL82673A0 (el)
IN (1) IN170025B (el)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5961269A (en) * 1996-11-18 1999-10-05 Applied Materials, Inc. Three chamber load lock apparatus
EP2137338A2 (en) * 2007-03-28 2009-12-30 Dow Corning Corporation Roll-to-roll plasma enhanced chemical vapor deposition method of barrier layers comprising silicon and carbon
CN101962751B (zh) * 2010-10-27 2012-02-22 普尼太阳能(杭州)有限公司 一种多步物理气相沉积设备
TWI812475B (zh) 2018-09-29 2023-08-11 美商應用材料股份有限公司 具有精確溫度和流量控制的多站腔室蓋

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4438723A (en) * 1981-09-28 1984-03-27 Energy Conversion Devices, Inc. Multiple chamber deposition and isolation system and method
JPS58111127A (ja) * 1981-12-24 1983-07-02 Ulvac Corp 耐摩耗性磁気記録体の製造法
JPS58189371A (ja) * 1982-04-28 1983-11-05 Teijin Ltd スパツタ装置
JPS6017074A (ja) * 1983-07-09 1985-01-28 Konishiroku Photo Ind Co Ltd 薄膜形成装置、及びこれを構成する処理室ユニツト

Also Published As

Publication number Publication date
CN1020045C (zh) 1993-03-10
IL82673A0 (en) 1987-11-30
EP0258966A3 (en) 1989-01-25
KR880001037A (ko) 1988-03-31
EP0258966A2 (en) 1988-03-09
KR960001033B1 (ko) 1996-01-17
DE3781748T2 (de) 1993-04-01
EP0258966B1 (en) 1992-09-16
CN87104355A (zh) 1988-02-17
JPS634059A (ja) 1988-01-09
DE3781748D1 (de) 1992-10-22

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