IN166164B - - Google Patents

Info

Publication number
IN166164B
IN166164B IN732/DEL/86A IN732DE1986A IN166164B IN 166164 B IN166164 B IN 166164B IN 732DE1986 A IN732DE1986 A IN 732DE1986A IN 166164 B IN166164 B IN 166164B
Authority
IN
India
Prior art keywords
layer
enhancement layer
carriers
improved
photoconductive layer
Prior art date
Application number
IN732/DEL/86A
Inventor
Annette Johncock
Stephen Jenking Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN166164B publication Critical patent/IN166164B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

An improved enhancement layer (18) operatively disposed between the top protective layer (19) and the photoconductive layer (16) of an electrophotographic device (10). The enhancement layer (18) is specifically tailored from a semicondcutor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotogrpahic device (10) from the photoconductive layer (16) thereof. A method of substantially improving charge fatigue characteristics through the use of such an improved enhancement layer (18) is also disclosed.
IN732/DEL/86A 1985-08-26 1986-08-13 IN166164B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76910685A 1985-08-26 1985-08-26

Publications (1)

Publication Number Publication Date
IN166164B true IN166164B (en) 1990-03-24

Family

ID=25084475

Family Applications (1)

Application Number Title Priority Date Filing Date
IN732/DEL/86A IN166164B (en) 1985-08-26 1986-08-13

Country Status (6)

Country Link
EP (1) EP0212581B1 (en)
JP (1) JPH0797228B2 (en)
AT (1) ATE91807T1 (en)
CA (1) CA1271076A (en)
DE (1) DE3688723T2 (en)
IN (1) IN166164B (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
JPS5888753A (en) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd Electrophotographic photoreceptor
JPS6059367A (en) * 1983-08-19 1985-04-05 ゼロツクス　コーポレーシヨン Xerographic device containing adjusted amorphous silicon
JPS6045258A (en) * 1983-08-23 1985-03-11 Sharp Corp Electrophotographic sensitive body
JPS6083957A (en) * 1983-10-13 1985-05-13 Sharp Corp Electrophotographic sensitive body
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
JPS60153051A (en) * 1984-01-20 1985-08-12 Toshiba Corp Photoconductive member
DE3485373D1 (en) * 1984-02-14 1992-01-30 Energy Conversion Devices Inc METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT.

Also Published As

Publication number Publication date
EP0212581B1 (en) 1993-07-21
EP0212581A3 (en) 1988-09-28
JPS6270853A (en) 1987-04-01
ATE91807T1 (en) 1993-08-15
EP0212581A2 (en) 1987-03-04
CA1271076A (en) 1990-07-03
JPH0797228B2 (en) 1995-10-18
DE3688723D1 (en) 1993-08-26
DE3688723T2 (en) 1993-10-28

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