IN162750B - - Google Patents
Info
- Publication number
- IN162750B IN162750B IN154/CAL/87A IN154CA1987A IN162750B IN 162750 B IN162750 B IN 162750B IN 154CA1987 A IN154CA1987 A IN 154CA1987A IN 162750 B IN162750 B IN 162750B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45891983A | 1983-01-18 | 1983-01-18 | |
| IN03/CAL/84A IN162262B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1984-01-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN162750B true IN162750B (cg-RX-API-DMAC10.html) | 1988-07-09 |
Family
ID=23822628
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN03/CAL/84A IN162262B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1984-01-03 | |
| IN154/CAL/87A IN162750B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1987-02-27 | |
| IN153/CAL/87A IN163310B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1987-02-27 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN03/CAL/84A IN162262B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1984-01-03 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN153/CAL/87A IN163310B (cg-RX-API-DMAC10.html) | 1983-01-18 | 1987-02-27 |
Country Status (13)
| Country | Link |
|---|---|
| EP (1) | EP0117045B1 (cg-RX-API-DMAC10.html) |
| JP (2) | JPS59136967A (cg-RX-API-DMAC10.html) |
| KR (1) | KR900002912B1 (cg-RX-API-DMAC10.html) |
| AT (1) | ATE70664T1 (cg-RX-API-DMAC10.html) |
| AU (1) | AU562641B2 (cg-RX-API-DMAC10.html) |
| BR (1) | BR8400202A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1208780A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3485348D1 (cg-RX-API-DMAC10.html) |
| IE (1) | IE58671B1 (cg-RX-API-DMAC10.html) |
| IL (1) | IL70715A0 (cg-RX-API-DMAC10.html) |
| IN (3) | IN162262B (cg-RX-API-DMAC10.html) |
| MX (1) | MX159577A (cg-RX-API-DMAC10.html) |
| ZA (2) | ZA8416B (cg-RX-API-DMAC10.html) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
| AU6596286A (en) * | 1985-10-29 | 1987-05-19 | 4C Electronics, Inc. | Progammable integrated crosspoint switch |
| JP2541576B2 (ja) * | 1987-08-22 | 1996-10-09 | 鐘淵化学工業株式会社 | イメ−ジ光メモリデバイス、光記録方法および光メモリの製法 |
| GB8816632D0 (en) * | 1988-07-13 | 1988-08-17 | Raychem Ltd | Electrical device |
| GB9026040D0 (en) * | 1990-11-30 | 1991-01-16 | Philips Electronic Associated | Addressable matrix device |
| USRE40790E1 (en) * | 1992-06-23 | 2009-06-23 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
| US5229326A (en) * | 1992-06-23 | 1993-07-20 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
| US5753947A (en) * | 1995-01-20 | 1998-05-19 | Micron Technology, Inc. | Very high-density DRAM cell structure and method for fabricating it |
| US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
| US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
| US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
| US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
| JP3363154B2 (ja) * | 1995-06-07 | 2003-01-08 | ミクロン テクノロジー、インコーポレイテッド | 不揮発性メモリセル内のマルチステート材料と共に使用するスタック／トレンチダイオード |
| US5831276A (en) | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
| US5837564A (en) * | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
| US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
| US6025220A (en) | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
| US5814527A (en) * | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
| US5789277A (en) * | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
| US6337266B1 (en) | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
| US5985698A (en) * | 1996-07-22 | 1999-11-16 | Micron Technology, Inc. | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell |
| US5998244A (en) * | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
| US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
| US6015977A (en) | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
| US5952671A (en) | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
| US6087689A (en) | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
| US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
| US6563156B2 (en) | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
| US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
| US7768812B2 (en) | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
| US8154005B2 (en) | 2008-06-13 | 2012-04-10 | Sandisk 3D Llc | Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars |
| US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
| US8105867B2 (en) | 2008-11-18 | 2012-01-31 | Sandisk 3D Llc | Self-aligned three-dimensional non-volatile memory fabrication |
| US8120068B2 (en) * | 2008-12-24 | 2012-02-21 | Sandisk 3D Llc | Three-dimensional memory structures having shared pillar memory cells |
| US8270199B2 (en) | 2009-04-03 | 2012-09-18 | Sandisk 3D Llc | Cross point non-volatile memory cell |
| US8289763B2 (en) | 2010-06-07 | 2012-10-16 | Micron Technology, Inc. | Memory arrays |
| US8759809B2 (en) | 2010-10-21 | 2014-06-24 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2994121A (en) * | 1958-11-21 | 1961-08-01 | Shockley William | Method of making a semiconductive switching array |
| US3629863A (en) | 1968-11-04 | 1971-12-21 | Energy Conversion Devices Inc | Film deposited circuits and devices therefor |
| US3699543A (en) | 1968-11-04 | 1972-10-17 | Energy Conversion Devices Inc | Combination film deposited switch unit and integrated circuits |
| US3530441A (en) | 1969-01-15 | 1970-09-22 | Energy Conversion Devices Inc | Method and apparatus for storing and retrieving information |
| US3768060A (en) * | 1972-04-10 | 1973-10-23 | Zenith Radio Corp | Threshold switch and novel material therefor |
| JPS51128268A (en) | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| US4177475A (en) | 1977-10-31 | 1979-12-04 | Burroughs Corporation | High temperature amorphous memory device for an electrically alterable read-only memory |
| US4217374A (en) | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
| IL61671A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Diode and rom or eeprom devices using it |
| JPS56135982A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Array of photoelectric conversion element |
| US4400409A (en) | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| JPS57128957A (en) * | 1981-02-04 | 1982-08-10 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| JPS57190923A (en) * | 1981-05-20 | 1982-11-24 | Seiko Epson Corp | Color liquid crystal display body |
| JPS58118142A (ja) * | 1982-01-06 | 1983-07-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
1983
- 1983-12-14 AU AU22406/83A patent/AU562641B2/en not_active Ceased
- 1983-12-15 CA CA000443457A patent/CA1208780A/en not_active Expired
-
1984
- 1984-01-03 ZA ZA8416A patent/ZA8416B/xx unknown
- 1984-01-03 IN IN03/CAL/84A patent/IN162262B/en unknown
- 1984-01-06 ZA ZA84123A patent/ZA84123B/xx unknown
- 1984-01-13 DE DE8484300212T patent/DE3485348D1/de not_active Expired - Lifetime
- 1984-01-13 EP EP84300212A patent/EP0117045B1/en not_active Expired - Lifetime
- 1984-01-13 AT AT84300212T patent/ATE70664T1/de not_active IP Right Cessation
- 1984-01-17 JP JP59006238A patent/JPS59136967A/ja active Pending
- 1984-01-17 JP JP59006237A patent/JPS59136966A/ja active Pending
- 1984-01-18 BR BR8400202A patent/BR8400202A/pt unknown
- 1984-01-18 IL IL70715A patent/IL70715A0/xx unknown
- 1984-01-18 IE IE10484A patent/IE58671B1/en not_active IP Right Cessation
- 1984-01-18 KR KR1019840000202A patent/KR900002912B1/ko not_active Expired
- 1984-01-18 MX MX200077A patent/MX159577A/es unknown
-
1987
- 1987-02-27 IN IN154/CAL/87A patent/IN162750B/en unknown
- 1987-02-27 IN IN153/CAL/87A patent/IN163310B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BR8400202A (pt) | 1984-08-21 |
| IN163310B (cg-RX-API-DMAC10.html) | 1988-09-03 |
| AU2240683A (en) | 1984-07-19 |
| ZA84123B (en) | 1984-09-26 |
| ZA8416B (en) | 1985-01-30 |
| AU562641B2 (en) | 1987-06-18 |
| JPS59136966A (ja) | 1984-08-06 |
| IL70715A0 (en) | 1984-04-30 |
| KR900002912B1 (ko) | 1990-05-03 |
| KR840007484A (ko) | 1984-12-07 |
| IE840104L (en) | 1984-07-18 |
| JPS59136967A (ja) | 1984-08-06 |
| MX159577A (es) | 1989-07-06 |
| CA1208780A (en) | 1986-07-29 |
| ATE70664T1 (de) | 1992-01-15 |
| EP0117045A3 (en) | 1986-12-30 |
| DE3485348D1 (de) | 1992-01-30 |
| IN162262B (cg-RX-API-DMAC10.html) | 1988-04-23 |
| IE58671B1 (en) | 1993-11-03 |
| EP0117045A2 (en) | 1984-08-29 |
| EP0117045B1 (en) | 1991-12-18 |