IN152658B - - Google Patents
Info
- Publication number
- IN152658B IN152658B IN1319/CAL/80A IN1319CA1980A IN152658B IN 152658 B IN152658 B IN 152658B IN 1319CA1980 A IN1319CA1980 A IN 1319CA1980A IN 152658 B IN152658 B IN 152658B
- Authority
- IN
- India
Links
Classifications
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- H10P30/21—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
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- H10P30/204—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/100,680 US4278476A (en) | 1979-12-05 | 1979-12-05 | Method of making ion implanted reverse-conducting thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN152658B true IN152658B (Direct) | 1984-03-03 |
Family
ID=22280989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1319/CAL/80A IN152658B (Direct) | 1979-12-05 | 1980-11-28 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4278476A (Direct) |
| EP (1) | EP0030370B1 (Direct) |
| JP (1) | JPS5693366A (Direct) |
| BR (1) | BR8007898A (Direct) |
| CA (1) | CA1144285A (Direct) |
| DE (1) | DE3070561D1 (Direct) |
| IN (1) | IN152658B (Direct) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4320571A (en) * | 1980-10-14 | 1982-03-23 | International Rectifier Corporation | Stencil mask process for high power, high speed controlled rectifiers |
| EP0074133B1 (de) * | 1981-08-25 | 1987-01-28 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Thyristor |
| JPS5860577A (ja) * | 1981-10-07 | 1983-04-11 | Hitachi Ltd | 半導体装置 |
| US4623910A (en) | 1982-09-24 | 1986-11-18 | Risberg Robert L | Semiconductor device |
| DE3404834A1 (de) * | 1984-02-08 | 1985-08-08 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Halbleiter-leistungsbauelement, insbesondere thyristor und gridistor, sowie verfahren zu dessen herstellung |
| JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
| JPH0642542B2 (ja) * | 1988-04-08 | 1994-06-01 | 株式会社東芝 | 高耐圧半導体装置の製造方法 |
| US5136344A (en) * | 1988-11-02 | 1992-08-04 | Universal Energy Systems, Inc. | High energy ion implanted silicon on insulator structure |
| DE4121375A1 (de) * | 1991-06-28 | 1993-01-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
| US5426059A (en) * | 1994-05-26 | 1995-06-20 | Queyssac; Daniel G. | Method of making vertically stacked bipolar semiconductor structure |
| US6787816B1 (en) * | 2000-09-01 | 2004-09-07 | Rensselaer Polytechnic Institute | Thyristor having one or more doped layers |
| KR100934829B1 (ko) * | 2008-02-15 | 2009-12-31 | 주식회사 하이닉스반도체 | 사이리스터 및 그 제조방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
| US3428870A (en) * | 1965-07-29 | 1969-02-18 | Gen Electric | Semiconductor devices |
| US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
| US3641403A (en) * | 1970-05-25 | 1972-02-08 | Mitsubishi Electric Corp | Thyristor with degenerate semiconductive region |
| US3662382A (en) * | 1970-11-09 | 1972-05-09 | Camera And Instr Corp | Keyboard controlled electrical code-signal generator system |
| US4049478A (en) * | 1971-05-12 | 1977-09-20 | Ibm Corporation | Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device |
| US4009059A (en) * | 1972-01-08 | 1977-02-22 | Mitsubishi Denki Kabushiki Kaisha | Reverse conducting thyristor and process for producing the same |
| FR2274140A1 (fr) * | 1974-06-04 | 1976-01-02 | Alsthom Cgee | Thyristor a conduction inverse |
| CH579827A5 (Direct) * | 1974-11-04 | 1976-09-15 | Bbc Brown Boveri & Cie | |
| CH580339A5 (Direct) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie | |
| US4038106A (en) * | 1975-04-30 | 1977-07-26 | Rca Corporation | Four-layer trapatt diode and method for making same |
| US4080620A (en) * | 1975-11-17 | 1978-03-21 | Westinghouse Electric Corporation | Reverse switching rectifier and method for making same |
| US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
| US4168990A (en) * | 1977-04-04 | 1979-09-25 | International Rectifier Corporation | Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile |
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1979
- 1979-12-05 US US06/100,680 patent/US4278476A/en not_active Expired - Lifetime
-
1980
- 1980-11-28 IN IN1319/CAL/80A patent/IN152658B/en unknown
- 1980-12-03 BR BR8007898A patent/BR8007898A/pt unknown
- 1980-12-03 CA CA000366042A patent/CA1144285A/en not_active Expired
- 1980-12-04 EP EP80107602A patent/EP0030370B1/en not_active Expired
- 1980-12-04 DE DE8080107602T patent/DE3070561D1/de not_active Expired
- 1980-12-05 JP JP17108480A patent/JPS5693366A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0030370B1 (en) | 1985-04-24 |
| CA1144285A (en) | 1983-04-05 |
| DE3070561D1 (en) | 1985-05-30 |
| BR8007898A (pt) | 1981-06-16 |
| JPS5693366A (en) | 1981-07-28 |
| EP0030370A2 (en) | 1981-06-17 |
| EP0030370A3 (en) | 1981-09-16 |
| US4278476A (en) | 1981-07-14 |