IL87417A0 - Induced metallization process by way of dissociating aluminum nitride ceramic - Google Patents
Induced metallization process by way of dissociating aluminum nitride ceramicInfo
- Publication number
- IL87417A0 IL87417A0 IL87417A IL8741788A IL87417A0 IL 87417 A0 IL87417 A0 IL 87417A0 IL 87417 A IL87417 A IL 87417A IL 8741788 A IL8741788 A IL 8741788A IL 87417 A0 IL87417 A0 IL 87417A0
- Authority
- IL
- Israel
- Prior art keywords
- way
- aluminum nitride
- nitride ceramic
- metallization process
- dissociating
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1136—Conversion of insulating material into conductive material, e.g. by pyrolysis
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laser Beam Processing (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9608387A | 1987-09-14 | 1987-09-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL87417A0 true IL87417A0 (en) | 1989-01-31 |
Family
ID=22255201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL87417A IL87417A0 (en) | 1987-09-14 | 1988-08-11 | Induced metallization process by way of dissociating aluminum nitride ceramic |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH02501253A (en) |
KR (1) | KR890702417A (en) |
IL (1) | IL87417A0 (en) |
WO (1) | WO1989002697A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3942472A1 (en) * | 1989-12-22 | 1991-06-27 | Asea Brown Boveri | COATING PROCESS |
DE4342258A1 (en) * | 1993-12-10 | 1995-06-14 | Resma Gmbh | Conductive region prodn. on or in ceramic |
DE4401612A1 (en) * | 1994-01-20 | 1995-07-27 | Resma Gmbh | Conductive region prodn. in or on ceramic workpiece |
US8003513B2 (en) | 2002-09-27 | 2011-08-23 | Medtronic Minimed, Inc. | Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures |
US20040061232A1 (en) | 2002-09-27 | 2004-04-01 | Medtronic Minimed, Inc. | Multilayer substrate |
US7138330B2 (en) | 2002-09-27 | 2006-11-21 | Medtronic Minimed, Inc. | High reliability multilayer circuit substrates and methods for their formation |
DE102006017630A1 (en) * | 2006-04-12 | 2007-10-18 | Lpkf Laser & Electronics Ag | Method for producing a printed conductor structure and a printed conductor structure produced in this way |
EP1845170A3 (en) * | 2006-04-12 | 2007-11-21 | LPKF Laser & Electronics AG | Method for manufacturing a conductor path structure and such a conductor path structure |
JP6003194B2 (en) | 2012-04-27 | 2016-10-05 | セイコーエプソン株式会社 | Base substrate, electronic device, and method of manufacturing base substrate |
DE102016200062B4 (en) * | 2016-01-06 | 2023-08-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the formation of electrically conductive vias in ceramic circuit carriers |
CN112420300A (en) * | 2020-11-11 | 2021-02-26 | 昆山丰景拓电子有限公司 | Novel resistor and manufacturing method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3256109A (en) * | 1962-12-20 | 1966-06-14 | Berger Carl | Metal formation within a substrate |
GB1251451A (en) * | 1969-03-19 | 1971-10-27 | ||
DE3103986A1 (en) * | 1981-02-05 | 1982-09-09 | Reiner Dipl.-Phys. 8011 Vaterstetten Szepan | Method for producing drilled holes for through-plated contact making in electronic printed-circuit boards |
JPS62136897A (en) * | 1985-12-11 | 1987-06-19 | 株式会社東芝 | Manufacture of ceramic circuit substrate |
US4691091A (en) * | 1985-12-31 | 1987-09-01 | At&T Technologies | Direct writing of conductive patterns |
-
1988
- 1988-07-29 JP JP63507973A patent/JPH02501253A/en active Pending
- 1988-07-29 KR KR1019890700839A patent/KR890702417A/en not_active Application Discontinuation
- 1988-07-29 WO PCT/US1988/002577 patent/WO1989002697A1/en not_active Application Discontinuation
- 1988-08-11 IL IL87417A patent/IL87417A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO1989002697A1 (en) | 1989-03-23 |
KR890702417A (en) | 1989-12-23 |
JPH02501253A (en) | 1990-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2192198B (en) | Preparation process of compound semiconductor | |
EP0437302A3 (en) | Ceramic port liners | |
EP0394477A4 (en) | Method of matching modem mode by pbx inward dialling | |
GB8725497D0 (en) | Isolation of silicon | |
DE3572155D1 (en) | Process for production of readily sinterable aluminum nitride powder | |
IL87417A0 (en) | Induced metallization process by way of dissociating aluminum nitride ceramic | |
DE3760041D1 (en) | Process for the preparation of ceramic cores | |
GB2193729B (en) | Process for producing aluminum nitride sintered body | |
JPS6470442A (en) | Manufacture of methylamine | |
HU896623D0 (en) | Process for preparation of fluorinated-diphenyl-ethers | |
EP0282285A3 (en) | A method of metallization for a nitride ceramic member | |
PH22740A (en) | Improved process for the resolution of 1-aminoindanes | |
YU100089A (en) | Process for obtaining silicium nitride with high content of alpha phase | |
PT83487B (en) | Process for the preparation of cementatious admixtures | |
EP0240869A3 (en) | Process for the preparation of silicon nitride | |
EP0242188A3 (en) | Method of making silicon nitride precursor | |
EP0206795A3 (en) | Method of producing silicon nitride powders | |
HU895128D0 (en) | Process for preparation of oxazolidine- and imidazolidine-derivatives | |
JPS5527841A (en) | Metallization of highly aluminous ceramics | |
EP0186497A3 (en) | Process for producing silicon nitride of high alpha content | |
YU41487A (en) | Process for obtaining perlite kinds of cast iron | |
GB2178417B (en) | Process for production of silicon nitride | |
EP0227082A3 (en) | Process for preparation of high alpha-type silicon nitride powder | |
HU896622D0 (en) | Process for preparation of 3-benzyl-4-fluor-benzaldehyde | |
GB9004062D0 (en) | Treatment of reaction-bonded silicon nitride articles |