IL84017A - Sourcing source for semiconductors and its production - Google Patents
Sourcing source for semiconductors and its productionInfo
- Publication number
- IL84017A IL84017A IL8401787A IL8401787A IL84017A IL 84017 A IL84017 A IL 84017A IL 8401787 A IL8401787 A IL 8401787A IL 8401787 A IL8401787 A IL 8401787A IL 84017 A IL84017 A IL 84017A
- Authority
- IL
- Israel
- Prior art keywords
- mixture
- dopant
- antimony
- silicon
- dopant source
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title claims description 155
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000203 mixture Substances 0.000 claims description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 62
- 239000010703 silicon Substances 0.000 claims description 61
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 52
- 229910052787 antimony Inorganic materials 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 43
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000006096 absorbing agent Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- DYKWCNXNJUNWDK-UHFFFAOYSA-N [Sb]=O.[Si] Chemical compound [Sb]=O.[Si] DYKWCNXNJUNWDK-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 4
- 239000003085 diluting agent Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 239000008246 gaseous mixture Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 33
- 125000004429 atom Chemical group 0.000 description 32
- 238000006243 chemical reaction Methods 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 19
- 230000004580 weight loss Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- 238000006722 reduction reaction Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- 230000007480 spreading Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000006260 foam Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- -1 antimony trioxide Chemical compound 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005923 long-lasting effect Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003701 inert diluent Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- LDMJFDJYOVHUMJ-UHFFFAOYSA-N stibanylidynesilicon Chemical compound [Sb]#[Si] LDMJFDJYOVHUMJ-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/24997—Of metal-containing material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/925,428 US4749615A (en) | 1986-10-31 | 1986-10-31 | Semiconductor dopant source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL84017A0 IL84017A0 (en) | 1988-02-29 |
| IL84017A true IL84017A (en) | 1994-07-31 |
Family
ID=25451717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL8401787A IL84017A (en) | 1986-10-31 | 1987-09-29 | Sourcing source for semiconductors and its production |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4749615A (fr) |
| EP (1) | EP0266030A3 (fr) |
| JP (1) | JPS63122118A (fr) |
| KR (1) | KR880005667A (fr) |
| BR (1) | BR8705514A (fr) |
| IL (1) | IL84017A (fr) |
| NO (1) | NO874521L (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5550082A (en) * | 1993-11-18 | 1996-08-27 | The University Of Houston System | Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing |
| JPH08119787A (ja) * | 1994-10-14 | 1996-05-14 | Komatsu Electron Metals Co Ltd | 連続チャージ法におけるドーパント供給方法およびドーパント組成物 |
| KR100358129B1 (ko) * | 1995-02-27 | 2003-01-24 | 주식회사 하이닉스반도체 | 산화물이도핑된폴리실리콘막을사용한반도체소자제조방법 |
| US6078035A (en) * | 1995-12-22 | 2000-06-20 | Lucent Technologies Inc. | Integrated circuit processing utilizing microwave radiation |
| US6303517B1 (en) | 1999-07-27 | 2001-10-16 | Ball Semiconductor, Inc. | Fast deposition on spherical-shaped integrated circuits in non-contact CVD process |
| US6365493B1 (en) | 2000-01-24 | 2002-04-02 | Ball Semiconductor, Inc. | Method for antimony and boron doping of spherical semiconductors |
| US6426280B2 (en) | 2000-01-26 | 2002-07-30 | Ball Semiconductor, Inc. | Method for doping spherical semiconductors |
| US6383287B1 (en) | 2000-09-28 | 2002-05-07 | Ball Semiconductor, Inc. | System and method for performing diffusion on a three-dimensional substrate |
| JP4442892B2 (ja) * | 2004-03-29 | 2010-03-31 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用砒素ドーパントの製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3658606A (en) * | 1969-04-01 | 1972-04-25 | Ibm | Diffusion source and method of producing same |
| JPS5717383B2 (fr) * | 1971-10-08 | 1982-04-10 | ||
| US3849344A (en) * | 1972-03-31 | 1974-11-19 | Carborundum Co | Solid diffusion sources containing phosphorus and silicon |
| US3923563A (en) * | 1973-04-16 | 1975-12-02 | Owens Illinois Inc | Process for doping silicon semiconductors using an impregnated refractory dopant source |
| US3920882A (en) * | 1973-04-16 | 1975-11-18 | Owens Illinois Inc | N-type dopant source |
| US3998668A (en) * | 1973-12-21 | 1976-12-21 | Owens-Illinois, Inc. | Aluminum metaphosphate dopant sources |
| US3962000A (en) * | 1974-01-07 | 1976-06-08 | Owens-Illinois, Inc. | Barium aluminoborosilicate glass-ceramics for semiconductor doping |
| US3954525A (en) * | 1974-08-26 | 1976-05-04 | The Carborundum Company | Hot-pressed solid diffusion sources for phosphorus |
| US4152286A (en) * | 1977-09-13 | 1979-05-01 | Texas Instruments Incorporated | Composition and method for forming a doped oxide film |
| US4379006A (en) * | 1981-08-07 | 1983-04-05 | Owens-Illinois, Inc. | B2 O3 Diffusion processes |
| US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
| US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| US4596716A (en) * | 1983-06-08 | 1986-06-24 | Kennecott Corporation | Porous silicon nitride semiconductor dopant carriers |
| US4526826A (en) * | 1983-06-08 | 1985-07-02 | Kennecott Corporation | Foam semiconductor dopant carriers |
| US4525429A (en) * | 1983-06-08 | 1985-06-25 | Kennecott Corporation | Porous semiconductor dopant carriers |
| US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
| US4592793A (en) * | 1985-03-15 | 1986-06-03 | International Business Machines Corporation | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates |
-
1986
- 1986-10-31 US US06/925,428 patent/US4749615A/en not_active Expired - Fee Related
-
1987
- 1987-08-14 EP EP19870307232 patent/EP0266030A3/fr not_active Withdrawn
- 1987-09-28 JP JP62243534A patent/JPS63122118A/ja active Pending
- 1987-09-29 IL IL8401787A patent/IL84017A/en not_active IP Right Cessation
- 1987-10-15 BR BR8705514A patent/BR8705514A/pt unknown
- 1987-10-30 NO NO874521A patent/NO874521L/no unknown
- 1987-10-31 KR KR870012174A patent/KR880005667A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63122118A (ja) | 1988-05-26 |
| KR880005667A (ko) | 1988-06-29 |
| BR8705514A (pt) | 1988-05-24 |
| EP0266030A2 (fr) | 1988-05-04 |
| IL84017A0 (en) | 1988-02-29 |
| US4749615A (en) | 1988-06-07 |
| EP0266030A3 (fr) | 1990-01-17 |
| NO874521L (no) | 1988-05-02 |
| NO874521D0 (no) | 1987-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RH | Patent void |