NO874521D0 - Dopemiddelkilde for halvledere og fremgangsmaate for fremstilling av denne. - Google Patents

Dopemiddelkilde for halvledere og fremgangsmaate for fremstilling av denne.

Info

Publication number
NO874521D0
NO874521D0 NO874521A NO874521A NO874521D0 NO 874521 D0 NO874521 D0 NO 874521D0 NO 874521 A NO874521 A NO 874521A NO 874521 A NO874521 A NO 874521A NO 874521 D0 NO874521 D0 NO 874521D0
Authority
NO
Norway
Prior art keywords
conductors
procedures
semi
preparing
summary source
Prior art date
Application number
NO874521A
Other languages
English (en)
Other versions
NO874521L (no
Inventor
Alan M Bonny
Jack Wilson
Robert A Gustaferro
Original Assignee
Stemcor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stemcor Corp filed Critical Stemcor Corp
Publication of NO874521D0 publication Critical patent/NO874521D0/no
Publication of NO874521L publication Critical patent/NO874521L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/24997—Of metal-containing material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
NO874521A 1986-10-31 1987-10-30 Dopemiddelkilde for halvledere og fremgangsmaate for fremstilling av denne. NO874521L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/925,428 US4749615A (en) 1986-10-31 1986-10-31 Semiconductor dopant source

Publications (2)

Publication Number Publication Date
NO874521D0 true NO874521D0 (no) 1987-10-30
NO874521L NO874521L (no) 1988-05-02

Family

ID=25451717

Family Applications (1)

Application Number Title Priority Date Filing Date
NO874521A NO874521L (no) 1986-10-31 1987-10-30 Dopemiddelkilde for halvledere og fremgangsmaate for fremstilling av denne.

Country Status (7)

Country Link
US (1) US4749615A (no)
EP (1) EP0266030A3 (no)
JP (1) JPS63122118A (no)
KR (1) KR880005667A (no)
BR (1) BR8705514A (no)
IL (1) IL84017A (no)
NO (1) NO874521L (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5550082A (en) * 1993-11-18 1996-08-27 The University Of Houston System Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing
JPH08119787A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 連続チャージ法におけるドーパント供給方法およびドーパント組成物
KR100358129B1 (ko) * 1995-02-27 2003-01-24 주식회사 하이닉스반도체 산화물이도핑된폴리실리콘막을사용한반도체소자제조방법
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
US6303517B1 (en) 1999-07-27 2001-10-16 Ball Semiconductor, Inc. Fast deposition on spherical-shaped integrated circuits in non-contact CVD process
US6365493B1 (en) 2000-01-24 2002-04-02 Ball Semiconductor, Inc. Method for antimony and boron doping of spherical semiconductors
US6426280B2 (en) 2000-01-26 2002-07-30 Ball Semiconductor, Inc. Method for doping spherical semiconductors
US6383287B1 (en) 2000-09-28 2002-05-07 Ball Semiconductor, Inc. System and method for performing diffusion on a three-dimensional substrate
JP4442892B2 (ja) * 2004-03-29 2010-03-31 コバレントマテリアル株式会社 シリコン単結晶引上げ用砒素ドーパントの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658606A (en) * 1969-04-01 1972-04-25 Ibm Diffusion source and method of producing same
JPS5717383B2 (no) * 1971-10-08 1982-04-10
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
US3920882A (en) * 1973-04-16 1975-11-18 Owens Illinois Inc N-type dopant source
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
US3998668A (en) * 1973-12-21 1976-12-21 Owens-Illinois, Inc. Aluminum metaphosphate dopant sources
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4379006A (en) * 1981-08-07 1983-04-05 Owens-Illinois, Inc. B2 O3 Diffusion processes
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4596716A (en) * 1983-06-08 1986-06-24 Kennecott Corporation Porous silicon nitride semiconductor dopant carriers
US4490192A (en) * 1983-06-08 1984-12-25 Allied Corporation Stable suspensions of boron, phosphorus, antimony and arsenic dopants
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers
US4526826A (en) * 1983-06-08 1985-07-02 Kennecott Corporation Foam semiconductor dopant carriers
US4588455A (en) * 1984-08-15 1986-05-13 Emulsitone Company Planar diffusion source
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates

Also Published As

Publication number Publication date
KR880005667A (ko) 1988-06-29
EP0266030A3 (en) 1990-01-17
BR8705514A (pt) 1988-05-24
IL84017A0 (en) 1988-02-29
EP0266030A2 (en) 1988-05-04
US4749615A (en) 1988-06-07
IL84017A (en) 1994-07-31
NO874521L (no) 1988-05-02
JPS63122118A (ja) 1988-05-26

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