IL63411A - Semiconductor device,method of making contact between two constituents thereof and etchant employed in the method - Google Patents

Semiconductor device,method of making contact between two constituents thereof and etchant employed in the method

Info

Publication number
IL63411A
IL63411A IL63411A IL6341181A IL63411A IL 63411 A IL63411 A IL 63411A IL 63411 A IL63411 A IL 63411A IL 6341181 A IL6341181 A IL 6341181A IL 63411 A IL63411 A IL 63411A
Authority
IL
Israel
Prior art keywords
constituents
semiconductor device
making contact
etchant employed
etchant
Prior art date
Application number
IL63411A
Other languages
English (en)
Other versions
IL63411A0 (en
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of IL63411A0 publication Critical patent/IL63411A0/xx
Publication of IL63411A publication Critical patent/IL63411A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic Table 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
IL63411A 1980-07-25 1981-07-24 Semiconductor device,method of making contact between two constituents thereof and etchant employed in the method IL63411A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/172,049 US4319069A (en) 1980-07-25 1980-07-25 Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation

Publications (2)

Publication Number Publication Date
IL63411A0 IL63411A0 (en) 1981-10-30
IL63411A true IL63411A (en) 1985-04-30

Family

ID=22626155

Family Applications (1)

Application Number Title Priority Date Filing Date
IL63411A IL63411A (en) 1980-07-25 1981-07-24 Semiconductor device,method of making contact between two constituents thereof and etchant employed in the method

Country Status (7)

Country Link
US (1) US4319069A (xx)
EP (1) EP0045195B1 (xx)
JP (1) JPS5753985A (xx)
AU (1) AU548678B2 (xx)
CA (1) CA1162283A (xx)
DE (1) DE3172136D1 (xx)
IL (1) IL63411A (xx)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2544131B1 (fr) * 1983-04-08 1985-07-05 Telecommunications Sa Detecteur photovoltaique en immersion optique
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4568792A (en) * 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4680611A (en) * 1984-12-28 1987-07-14 Sohio Commercial Development Co. Multilayer ohmic contact for p-type semiconductor and method of making same
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
FR2614135B1 (fr) * 1987-04-14 1989-06-30 Telecommunications Sa Photodiode hgcdte a reponse rapide
US6265731B1 (en) * 1992-06-03 2001-07-24 Raytheon Company Ohmic contacts for p-type wide bandgap II-VI semiconductor materials
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6281035B1 (en) 1997-09-25 2001-08-28 Midwest Research Institute Ion-beam treatment to prepare surfaces of p-CdTe films
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
US6423565B1 (en) 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
KR20140113717A (ko) * 2012-02-15 2014-09-24 코니카 미놀타 가부시키가이샤 기능성 필름 및 그의 제조 방법, 및 상기 기능성 필름을 포함하는 전자 디바이스
US9231134B2 (en) 2012-08-31 2016-01-05 First Solar, Inc. Photovoltaic devices
US9276157B2 (en) * 2012-08-31 2016-03-01 First Solar, Inc. Methods of treating a semiconductor layer
EP2969273A4 (en) 2013-03-15 2016-10-12 First Solar Inc METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480473A (en) * 1966-06-24 1969-11-25 Kewanee Oil Co Method of producing polycrystalline photovoltaic cells
FR1594268A (xx) * 1968-12-10 1970-06-01
JPS4936792B1 (xx) * 1970-10-15 1974-10-03
NL7015375A (xx) * 1970-10-21 1972-04-25
DE2137280C2 (de) * 1971-07-26 1975-04-17 Deutsche Itt Industries Gmbh, 7800 Freiburg Anwendung eines Verfahrens zum Xtzen einer Schicht aus Aluminium
JPS5040832A (xx) * 1973-08-16 1975-04-14
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
US4207119A (en) * 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell

Also Published As

Publication number Publication date
DE3172136D1 (en) 1985-10-10
EP0045195A3 (en) 1982-02-10
AU548678B2 (en) 1986-01-02
EP0045195B1 (en) 1985-09-04
CA1162283A (en) 1984-02-14
JPS5753985A (xx) 1982-03-31
IL63411A0 (en) 1981-10-30
AU7341081A (en) 1982-01-28
US4319069A (en) 1982-03-09
EP0045195A2 (en) 1982-02-03

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