DE3172136D1 - Semiconductor device, a method of making a low-resistance contact between a metal and a layer of polycrystalline p-type cdte in said semiconductor device and a cadmium-selective etchant which is useful for said method - Google Patents
Semiconductor device, a method of making a low-resistance contact between a metal and a layer of polycrystalline p-type cdte in said semiconductor device and a cadmium-selective etchant which is useful for said methodInfo
- Publication number
- DE3172136D1 DE3172136D1 DE8181303406T DE3172136T DE3172136D1 DE 3172136 D1 DE3172136 D1 DE 3172136D1 DE 8181303406 T DE8181303406 T DE 8181303406T DE 3172136 T DE3172136 T DE 3172136T DE 3172136 D1 DE3172136 D1 DE 3172136D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- cadmium
- polycrystalline
- useful
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 229910052793 cadmium Inorganic materials 0.000 title 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/172,049 US4319069A (en) | 1980-07-25 | 1980-07-25 | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3172136D1 true DE3172136D1 (en) | 1985-10-10 |
Family
ID=22626155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181303406T Expired DE3172136D1 (en) | 1980-07-25 | 1981-07-24 | Semiconductor device, a method of making a low-resistance contact between a metal and a layer of polycrystalline p-type cdte in said semiconductor device and a cadmium-selective etchant which is useful for said method |
Country Status (7)
Country | Link |
---|---|
US (1) | US4319069A (de) |
EP (1) | EP0045195B1 (de) |
JP (1) | JPS5753985A (de) |
AU (1) | AU548678B2 (de) |
CA (1) | CA1162283A (de) |
DE (1) | DE3172136D1 (de) |
IL (1) | IL63411A (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2544131B1 (fr) * | 1983-04-08 | 1985-07-05 | Telecommunications Sa | Detecteur photovoltaique en immersion optique |
US4456630A (en) * | 1983-08-18 | 1984-06-26 | Monosolar, Inc. | Method of forming ohmic contacts |
US4568792A (en) * | 1984-02-02 | 1986-02-04 | Sri International | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts |
US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
US4548681A (en) * | 1984-02-03 | 1985-10-22 | The Standard Oil Company (Ohio) | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
US4680611A (en) * | 1984-12-28 | 1987-07-14 | Sohio Commercial Development Co. | Multilayer ohmic contact for p-type semiconductor and method of making same |
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
FR2614135B1 (fr) * | 1987-04-14 | 1989-06-30 | Telecommunications Sa | Photodiode hgcdte a reponse rapide |
US6265731B1 (en) * | 1992-06-03 | 2001-07-24 | Raytheon Company | Ohmic contacts for p-type wide bandgap II-VI semiconductor materials |
US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
US6281035B1 (en) | 1997-09-25 | 2001-08-28 | Midwest Research Institute | Ion-beam treatment to prepare surfaces of p-CdTe films |
US6576547B2 (en) | 1998-03-05 | 2003-06-10 | Micron Technology, Inc. | Residue-free contact openings and methods for fabricating same |
US6423565B1 (en) | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
US20110117696A1 (en) * | 2009-11-19 | 2011-05-19 | Air Liquide Electronics U.S. Lp | CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
KR20140113717A (ko) * | 2012-02-15 | 2014-09-24 | 코니카 미놀타 가부시키가이샤 | 기능성 필름 및 그의 제조 방법, 및 상기 기능성 필름을 포함하는 전자 디바이스 |
US9231134B2 (en) | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
US9276157B2 (en) * | 2012-08-31 | 2016-03-01 | First Solar, Inc. | Methods of treating a semiconductor layer |
EP2969273A4 (de) | 2013-03-15 | 2016-10-12 | First Solar Inc | Verfahren zur herstellung eines fotovoltaikmoduls |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3480473A (en) * | 1966-06-24 | 1969-11-25 | Kewanee Oil Co | Method of producing polycrystalline photovoltaic cells |
FR1594268A (de) * | 1968-12-10 | 1970-06-01 | ||
JPS4936792B1 (de) * | 1970-10-15 | 1974-10-03 | ||
NL7015375A (de) * | 1970-10-21 | 1972-04-25 | ||
DE2137280C2 (de) * | 1971-07-26 | 1975-04-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Anwendung eines Verfahrens zum Xtzen einer Schicht aus Aluminium |
JPS5040832A (de) * | 1973-08-16 | 1975-04-14 | ||
US3993533A (en) * | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
US4207119A (en) * | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
-
1980
- 1980-07-25 US US06/172,049 patent/US4319069A/en not_active Expired - Lifetime
- 1980-10-07 CA CA000361703A patent/CA1162283A/en not_active Expired
-
1981
- 1981-07-24 AU AU73410/81A patent/AU548678B2/en not_active Ceased
- 1981-07-24 JP JP56115425A patent/JPS5753985A/ja active Pending
- 1981-07-24 EP EP81303406A patent/EP0045195B1/de not_active Expired
- 1981-07-24 DE DE8181303406T patent/DE3172136D1/de not_active Expired
- 1981-07-24 IL IL63411A patent/IL63411A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
EP0045195A3 (en) | 1982-02-10 |
AU548678B2 (en) | 1986-01-02 |
EP0045195B1 (de) | 1985-09-04 |
CA1162283A (en) | 1984-02-14 |
JPS5753985A (de) | 1982-03-31 |
IL63411A0 (en) | 1981-10-30 |
IL63411A (en) | 1985-04-30 |
AU7341081A (en) | 1982-01-28 |
US4319069A (en) | 1982-03-09 |
EP0045195A2 (de) | 1982-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |