IL53497A - Sensing circuit for simiconductor charge transfer devices - Google Patents

Sensing circuit for simiconductor charge transfer devices

Info

Publication number
IL53497A
IL53497A IL53497A IL5349777A IL53497A IL 53497 A IL53497 A IL 53497A IL 53497 A IL53497 A IL 53497A IL 5349777 A IL5349777 A IL 5349777A IL 53497 A IL53497 A IL 53497A
Authority
IL
Israel
Prior art keywords
simiconductor
sensing circuit
charge transfer
transfer devices
devices
Prior art date
Application number
IL53497A
Other languages
English (en)
Other versions
IL53497A0 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL53497A0 publication Critical patent/IL53497A0/xx
Publication of IL53497A publication Critical patent/IL53497A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00Transversal filters
    • H03H15/02Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Amplifiers (AREA)
IL53497A 1976-12-06 1977-11-30 Sensing circuit for simiconductor charge transfer devices IL53497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/747,900 US4075514A (en) 1976-12-06 1976-12-06 Sensing circuit for semiconductor charge transfer devices

Publications (2)

Publication Number Publication Date
IL53497A0 IL53497A0 (en) 1978-01-31
IL53497A true IL53497A (en) 1980-01-31

Family

ID=25007156

Family Applications (1)

Application Number Title Priority Date Filing Date
IL53497A IL53497A (en) 1976-12-06 1977-11-30 Sensing circuit for simiconductor charge transfer devices

Country Status (15)

Country Link
US (1) US4075514A (ja)
JP (1) JPS5370772A (ja)
BE (1) BE861441A (ja)
CA (1) CA1111560A (ja)
CH (1) CH623960A5 (ja)
DE (1) DE2753358C3 (ja)
DK (1) DK146020C (ja)
ES (1) ES464794A1 (ja)
FR (1) FR2373190A1 (ja)
GB (1) GB1589320A (ja)
HK (1) HK25184A (ja)
IL (1) IL53497A (ja)
IT (1) IT1088583B (ja)
NL (1) NL7713143A (ja)
SE (1) SE415066B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
US4126794A (en) * 1977-07-25 1978-11-21 Bell Telephone Laboratories, Incorporated Semiconductor charge coupled device with split electrode configuration
US4151429A (en) * 1977-10-03 1979-04-24 Northern Telecom Limited Differential charge sensing circuit for MOS devices
US4245199A (en) * 1978-05-11 1981-01-13 Bell Telephone Laboratories, Incorporated Semiconductor CCD transversal filter with controllable threshold level
JPS613779U (ja) * 1984-06-14 1986-01-10 日野自動車株式会社 自動車の車体
JPH0693765B2 (ja) * 1985-11-06 1994-11-16 キヤノン株式会社 撮像装置
JPS62156584U (ja) * 1986-03-28 1987-10-05
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
US7576570B1 (en) * 2006-08-22 2009-08-18 Altera Corporation Signal amplitude detection circuitry without pattern dependencies for high-speed serial links

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389340A (en) * 1964-09-30 1968-06-18 Robertshaw Controls Co Common mode rejection differential amplifier
NL7202070A (ja) * 1972-02-17 1973-08-21
GB1436110A (en) * 1972-09-25 1976-05-19 Rca Corp Circuit for amplifying charge
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4071775A (en) * 1976-04-02 1978-01-31 Texas Instruments Incorporated Charge coupled differential amplifier for transversal filter

Also Published As

Publication number Publication date
IT1088583B (it) 1985-06-10
FR2373190B1 (ja) 1980-08-22
FR2373190A1 (fr) 1978-06-30
ES464794A1 (es) 1978-09-01
DK541477A (da) 1978-06-07
GB1589320A (en) 1981-05-13
BE861441A (fr) 1978-03-31
DK146020C (da) 1983-12-12
CH623960A5 (ja) 1981-06-30
JPS5636583B2 (ja) 1981-08-25
JPS5370772A (en) 1978-06-23
IL53497A0 (en) 1978-01-31
NL7713143A (nl) 1978-06-08
DE2753358B2 (de) 1980-07-03
SE7713770L (sv) 1978-06-07
DK146020B (da) 1983-05-24
DE2753358A1 (de) 1978-06-08
HK25184A (en) 1984-03-30
DE2753358C3 (de) 1981-05-27
SE415066B (sv) 1980-09-01
CA1111560A (en) 1981-10-27
US4075514A (en) 1978-02-21

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