IL42599A - Ion plating method and product therefrom - Google Patents

Ion plating method and product therefrom

Info

Publication number
IL42599A
IL42599A IL42599A IL4259973A IL42599A IL 42599 A IL42599 A IL 42599A IL 42599 A IL42599 A IL 42599A IL 4259973 A IL4259973 A IL 4259973A IL 42599 A IL42599 A IL 42599A
Authority
IL
Israel
Prior art keywords
substrate
metal
coating
ions
coated
Prior art date
Application number
IL42599A
Other versions
IL42599A0 (en
Original Assignee
Engel Niels Nikolaj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Engel Niels Nikolaj filed Critical Engel Niels Nikolaj
Publication of IL42599A0 publication Critical patent/IL42599A0/en
Publication of IL42599A publication Critical patent/IL42599A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06Surface hardening
    • C21D1/09Surface hardening by direct application of electrical or wave energy; by particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48Ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • C23C14/582Thermal treatment using electron bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5846Reactive treatment

Description

PDian nsinm o¾ a ■ns*-*'? rra-w ION PLATING METHOD AND PRODUCT THEREFROM Γ0 ALL WHOM IT MAYsCONCER : , ' Be : it known that I, NIELS N. ENGEL, a citizen of the United States of America, residing at Atlanta, Fulton County, Georgia, lave invented -certain new and useful improvements in an .„.;:·. ION PLATING METHOD AND PRODUCT THEREFROM for which the, following is a specification.
ABSTRACT OF THE DISCLOSURE ^ · , ! : i ·.
An' ion plating method and product therefrom wherein ions of a metal; are implanted into or/and plated onto a substrate to increase the hardness of the surface. After plating, the product can be reacted with carbon, boron, nitrogen or another metal, thereby forming the carbide, boride, nitride or metal compound of the plating metal coating. Hardening of the product by quenching follows which produces a cutting tool of superior qualities.
BACKGROUND OF THE INVENTION This invention relates to an improved metalic deposition on a substrate and more particularly to an ion plating method and product therefrom.
The cutting power and edge life of knife blades depend . upon the presence of a matrix structure of slightly tempered martensite Of high hardness and the embedding of a sufficient number of finely, and uniformly distributed carbides in this matrix There are many procedures utilized in the formation of cutting tools to provide a cutting edge of great hardness and durability.- ' With stainless steel, for example, the carbon content of the steel substrate has been increased in order to increase the proportion of hard chromium carbides in the structure when used as cutting materials. Other carbide -forming alloying constituents, such as molybdenum, tungsten, vanadium, titanium and the like have also been added to the substrate. coat of the carbide, boride, nitride or metal compound to form an excellent cutting edge.
It is, therefore, a primary object of the present invention to provide a method of producing improved cutting edges and products therefrom.
Another object of the present invention is to provide a method of implanting ions of a metal into a steel or iron containing alloy substrate to form carbides of the metal within the martensite of the hardened substrate, thereby increasing the surface hardness of the substrate to produce an improved cutting tool Another object of the present invention is to provide a method of ion plating a metal onto the surface of a substrate.
A further object of the present invention is to provide a method of carburizing, boriding, nitriding or metallizing an ion plated substrate.
;A still further object of the present invention is to . provide cutting.and abrading tools which have superior cutting power, durability, strength and corrosion and wear resistance; Another object of the present invention is to provide a method of ion plating which is adaptable to substrates of steel or iron containing alloys.
'■■ An- object of the present invention is to provide an iron plated product which is very resistant to thermal shock.
Another object of the present invention is to provide an improved cutting edge which has a low coefficient of friction.
Still other objects and advantages of the present invention will become apparent , after reading the accompanying description of the selected illustrative embodiment.
DESCRIPTION OF THE FIGURES OF DRAWING Figure 1 is a : photomicrograph of plain carbon steel treated in accordance with the present invention; and Figure 2 is a photomicrograph of plain carbon steel which was given the same heat treatment but which has not been ion implanted.
. DESCRIPTION OF THE INVENTION Ion implanting in any metal will generally cause an increase in the hardness and strength of the metal. Ion implantation into a carbon containing steel combined with a hardening treatment leads to a superhard martensite independent of the implanted material. In ion implanting a steel substrate, the carbon content of the substrate should range from 0.31 to 1.8% b weight, with the optimum range being from 0.5% to 0.8% by weight. A substrate having a carbon content below 0.3% is called "mild" steel and is too soft for cutting tools and various wear resistant objects. Their coats will easily break down if the support or substrate is much softer" and weaker than the coating itself.
Therefore^ substrates should be hard, preferably hardened steel. There is actually no maximum limit of the carbon percentage within the. substrate; it depends on how brittle it is desired that the substrate be after it has been quenched as discussed below. The substrate used in the present invention can be any steel or iron containing alloy.
The ion implantation yields the advantage that the hardened matrix is harder than martensite obtained by normal hardening implanted matrix constitutes a method to obtai the hardest Coats on a super ard matrix, which cannot be obtained by any other method*. At the same time* the adherence between coat and matrix is better than can be obtained by any other method* Th fj&re step in the io plating process of the present inventio is to clean the substeate. The substrate is cleaned by any suitable method and then is quickly mounted on a metal holder with the edges to be ion plated exposed. The holder is trans erred to a vacuum chamber for ion Implantation and plating wherein the substrate forms the cathode* The chamber is pumped down to a vacuum of 2xlO"¾nmHg or better with frequent flushing with argon gas. Such a low pressure is necessary to support the plasma that is created therein as described below*' Argon gas is let into the chamber* An electrical potential is then applied to the cathode(substrate) and Is radualincreased until a pink argon plasma is formed. Argon is used as It will not react with the substrate or with the ion plating material and is heavy so as to increase the Impact force of the ions on the substrate whereby better cleaning action is achieved* The plasma forming starts in the range of 1KV and 50 mamps and can then be maintained to much lower potentials* The power setting can be varied according to the needs* The object to be Ion plated Is first ion cl eaned with the argon plasma* The argon sputters off any atomic impurities or dirt that are present on the substrate surface, and Inherently implants this inert gas into the surface of the substrate to produce a subsur ace containing the argon (an iner gas) as an element which is insoluble in the substrate* The ion plating material on a filament (such as a tungsten wire) or from a poo of melted meta heated by an electron gun forms the anode within the ohamber* By passing sufficient current through this filament while the argon plasma is holding,, the filament (anode) Is gradually heated until the material on the anode melts and, aided by the substantial vaouum within the 6a - chamber, then vaporizes. These ionized particles are attracted^ to the athode (object to be ion plated) due to the great potential .difference (which can vary from 500V to 50,000V), and thus , iom mplantation and/or plating is . accomplished .
Actually, the first ions that strike the substrate surface are implanted within the substrate and cause a gradual transition between the substrate and the surface. As the sub- strate becomes "saturated" by the ion implantation, the remainder of the ions are deposited on the substrate surface.
The "penetration depth" of the ion implantation into the substrate depends on the hardness of the substrate. Generally a substrate having a hardness of less than 50 Rockwell C is preferred. ' ■ ".
When the 'implanted ions react with the carbon present in the substrate , it , is not known at this time whether they form a precipitate or are in "solution" within the crystalline · lattice of the substrate. This is due to the fact that compounds formed b the implanted ions are too small to be observed by , present day methods .
■ /^..The time of ion plating can be varied from fractions of seconds to several minutes . During the ion plating process, the pressure in the chamber does drop somewhat, but should be maintained at the right level by adjusting the argon pressure of metal vaporization.
.Ob ects Ion Plated: The above ion plating procedure can be performed on a number of steel or iron containing alloys, such as Tazor blades , industrial blades,, band saws , files , nails, ; etc.■, as.''.well as other metals and shapes including meat chopper -Ion Plating Materials : A wide range o£ elements can be ion Dlated onto the substrate. These include all of the refractory elements (scandium, titanium, zirconium, hafnium, ; vanadium:j'rcolumbium, tantalum, chromium, molybdenum and tungsten) the rare-earth elements (lanthanum, cerium, praseodymium, neodymiu , promethium,. samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, yttrium, ytterbium, · and lutetium) the actinide series (actinium, thorium, protactinium, * uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, mendelevium, nobelium, and lawrencium)',, iron , cobalt, nickel and boron. Some of these metals require a high powered vaporization unit, such as an electron gun, in order to evaporate the same. In industrial production, electron gun vaporization would be preferred.
.·; Carburizing, Boridin , Nitriding, and Metallizing: Wear resistant and corrosion resistant cutting edges are obtained with superhard materials which can be added to the ion implanted substrate surface . The hardest known materials are carbides, borides,; and nitrides and compounds of transistion elements with second period elements, for example TiC, ScN, VC, Cr^Cz, TiB, B4C, and BN. Additionally, any metal included in the above list of ion plating materials , other than the metal already plated on the substrate, tan be. added to the ion implanted substrate surface. These materials can be added to the substrate as compounds; however , they are very stable and difficult to evaporate. The best procedure . is to ion plate the pure metal (Ti , Cr, B, Sc, etc.) onto the substrate, and then convert the metal to the respective carbids boride or nitride . were carburized in a methane and hydrogen atmosphere and hardened by water quenching. It was found that there was a difference &ϊ nearly 300 points in the Knoop hardness between the two: '' '· ' ■ Annealed file 1120 Khn Unannealed file 825 Khn It is believed that this difference in hardness is caused by the ability of dislocations to penetrate into the material. The mechanism of creating superhard martensite is most probably that atoms impinging on the metal surface initiate a dislocation which moves to a certain depth into the material carrying the impinged atom with it. Soft materials are permeable to dislocations and can therefore absorb impinging atoms to penetrate below the surfac An. advantage of the present invention is that it. produces an adhesion between the coating and the substrate which is greater than the strength of the substrate. Glue was placed on a portion of the coated substrate. In an attempt to pull the coating away from the substrate surface, either the substrate or the glue broke under the tension. The "joint" or coating/substrate interface never did break.
The method of this invention produces a coating on a substrate which is very resistant to thermal shock. Extreme and sudden temperature changes do not effect either the coating or the inti This can be obtained by the selection of a coat with a smaller thermal expansion than the substrate. When cooled after plating at a somewhat elevated temperature, the coat will be under compressive stresses Also, the selection of a coat materiap. with a low coefficient of friction will prevent heating through rubbing such as with chopper plates in meai cutting. A titanium Figure Ids a photomicrograph of a sample A of plain carbon steel ion plated with titanium, carburized by a plasm .£s formed by a nitrogen-propane mixture and quenched in water.
/Figure 2 is a photomicrograph of a sample B of the same plain carbon steel carburized and quenched as sample A but without) ion plating. The test load for both samples A and B was 100 grams. The magnification of Figures 1 and 2 is 250X. As seen in the following Table I, the Knoop hardness values for the carburized sample (sample B) are fairly constant and are similar to that of a normal steel. However, for the ion implanted sample (sample A), the surface hardness is very much higher. rs Sample B 885 885 880 880 910 880 'Typical hardness values for samples under varying' experi' mental conditions of voltage, current, ion plating material and time of ion plating are presented in Table II. ater a on a ng me o age u Ion Material and Ion Plating (KV) (mamps) Medium Plated .Atmosphere (Minutes) 1. Plain Ti/Argon 100 C+H Carbon Steel 2. } Plain r Ti/Argon 2 100 C+H '·■ " Carbon Steel 3. Plain . Ti/Argon , 2 . 100 C+H Carbon Steel 4. ; Plain - Ti/Argon ½ 2 100 C+H Carbon Steel 5. Plain Ti/Argon 5 2 100 C+H. Carbon Steel 6 Plain Fe/Argon 2 2 100 C+H.
Carbon Steel ?V Plain Al/Argon 1 2 100 C+H. 3 Carbon Steel 8. Plain ·. ' Ti/Propane 2 2 100 Impulse Carbon Steel Hardene 9. Steel File - Ti/Argon 3 3 100 ¾+m Annealed 10. Steel File Ti/Argon 3 3 100· t+H. (Hardened) 11. Plain None -C,HR Carbon Steel 12. Plain None Impulse Carbon Steel Hardene VOTE:1--*'11 thf> " 1^ were nn cleaned for 2 minutes in argon except #2.
•C-cn^lmn-contair.inc caseous compounl. such as methane.

Claims (1)

1. Claims A method of producing a ooated bod comprising bombarding a substrate with a in ionic tio with such substrate is reactive and at a sufficient for the me a ions penetrate into said continuing the bombardment of said substrate with said meta a suffioient length of time to a coating of said metal over the surf ce of the implanted metal of said and reacting the coating on the sur with a substance which imparts greater hardness to the method according to Claim 1 wherein said hardening is accomplished by reacting the coating with a hardening chemica selected the group consisting of nitrogen and a seleoted one of the metals with which said substrate is reaotive othe than said bombarding A method according Claim 2 or 3 wherein said ning further includes heat treating said coated A method aooording to of Claims 1 to 3 including the step of leaning sur of said substrate prior to ste A method according to of 1 to including the steps of heat ng substrate to the austenite range of the substrate and cooling it with a supe A method according to 5 wherein said substrate is a carbon containing A method according to Claim 6 wherei said carbon containing substrate has a carbon content ging from to by A method according to Claim wherein the amount of carbon in said substrate ranges from to by A method according to any of Claims 1 to comprising the steps o bombarding a surface of the substrate with ions of a metal seleoted from the grou consisting of thulium actinium i e and boron to implant said ions to a preselected penetratio depth within continuing the bombardment until said substrate had become saturated with said ions within said lected further continuing said bombardmen to said ions to plate the surface of and reacting said io with element seleoted from the group consisting of nitrogen a seleoted of said metals other than the implanted so as to form the nitride or compound of the respective plated method of producing a ooated substantially hereinbefore coated whenever obtained by the according to any of Claims to coated product a iro an implanted subsur ace along sur ace of said said subsurface containing an element which is insoluble in aaid and coatin along said subsurface o a coating metal and a hardening substance reacted with said metal said substance with said coating a layer which is harder the coating itsel coated metal produc 12 wherein said insoluble is an inert gas and said coatin metal is the group consisting of soandium hafnium molybdenum s t thor mendelevium iron cobalt nickel A ooated metal product according to Claim 12 or wherein said hardening substance is selected group consisting of nitrogen and A coated metal product according to any of Claims 12 to 14 a knoop hardness in excess of insufficientOCRQuality
IL42599A 1972-08-09 1973-06-26 Ion plating method and product therefrom IL42599A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US279244A US3915757A (en) 1972-08-09 1972-08-09 Ion plating method and product therefrom

Publications (2)

Publication Number Publication Date
IL42599A0 IL42599A0 (en) 1973-08-29
IL42599A true IL42599A (en) 1977-02-28

Family

ID=23068203

Family Applications (1)

Application Number Title Priority Date Filing Date
IL42599A IL42599A (en) 1972-08-09 1973-06-26 Ion plating method and product therefrom

Country Status (13)

Country Link
US (1) US3915757A (en)
JP (1) JPS547261B2 (en)
AT (1) AT326971B (en)
CA (1) CA1006844A (en)
CH (1) CH586287A5 (en)
DE (1) DE2340282C3 (en)
FR (1) FR2195704B1 (en)
GB (1) GB1423412A (en)
IE (1) IE37888B1 (en)
IL (1) IL42599A (en)
IT (1) IT989807B (en)
SE (1) SE401840B (en)
ZA (1) ZA734395B (en)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT385058B (en) * 1946-07-17 1988-02-10 Vni Instrument Inst METHOD FOR MOUNTING CUTTING TOOLS
JPS51115286A (en) * 1975-04-03 1976-10-09 Anelva Corp Ornament
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
DE3030149C3 (en) * 1979-08-09 1996-12-19 Mitsubishi Materials Corp Cutting blade and method for its production
JPS5656636A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Processing method of fine pattern
GB2075069B (en) * 1979-12-03 1984-09-12 Atomic Energy Authority Uk Wear resistance of metals
US4364969A (en) * 1979-12-13 1982-12-21 United Kingdom Atomic Energy Authority Method of coating titanium and its alloys
JPS5779169A (en) * 1980-11-06 1982-05-18 Sumitomo Electric Ind Ltd Physical vapor deposition method
US4645715A (en) * 1981-09-23 1987-02-24 Energy Conversion Devices, Inc. Coating composition and method
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
GB2123039B (en) * 1982-03-23 1985-10-23 Atomic Energy Authority Uk Coatings for cutting implements
AT381268B (en) * 1982-05-05 1986-09-25 Ver Edelstahlwerke Ag TOOL AND METHOD FOR THE PRODUCTION THEREOF
GB2125442B (en) * 1982-05-24 1986-02-19 Atomic Energy Authority Uk A procedure for the hardening of materials
US4486247A (en) * 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
US4751100A (en) * 1983-06-20 1988-06-14 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium and method for making the same
JPS6115967A (en) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd Surface treatment
GB8423255D0 (en) * 1984-09-14 1984-10-17 Atomic Energy Authority Uk Surface treatment of metals
GB8512542D0 (en) * 1985-05-17 1985-06-19 Atomic Energy Authority Uk Improved cutting edges
US5250327A (en) * 1986-04-28 1993-10-05 Nissin Electric Co. Ltd. Composite substrate and process for producing the same
US4744938A (en) * 1986-08-18 1988-05-17 Westinghouse Electric Corp. Method and apparatus for producing ultralowmass fissionable deposits for reactor neutron dosimetry by recoil ion-implantation
US4737234A (en) * 1986-08-18 1988-04-12 Westinghouse Electric Corp. Method and apparatus for permanently recording high neutron fluence
AT388394B (en) * 1987-01-09 1989-06-12 Vni Instrument Inst METHOD FOR PRODUCING CUTTING TOOL
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US5088202A (en) * 1988-07-13 1992-02-18 Warner-Lambert Company Shaving razors
GB2227755B (en) * 1988-12-08 1993-03-10 Univ Hull A process for improving the wear and corrosion resistance of metallic components
US5061512A (en) * 1989-02-21 1991-10-29 General Electric Company Method of producing lubricated bearings
US5242741A (en) * 1989-09-08 1993-09-07 Taiho Kogyo Co., Ltd. Boronized sliding material and method for producing the same
JP2786283B2 (en) * 1989-12-22 1998-08-13 株式会社日立製作所 Surface modification method and apparatus, and surface modified substrate
US5139876A (en) * 1990-03-05 1992-08-18 Cleveland State University Ceramic article having wear resistant coating
US5167725A (en) * 1990-08-01 1992-12-01 Ultracision, Inc. Titanium alloy blade coupler coated with nickel-chrome for ultrasonic scalpel
CA2065581C (en) 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5393573A (en) * 1991-07-16 1995-02-28 Microelectronics And Computer Technology Corporation Method of inhibiting tin whisker growth
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
JP3221892B2 (en) * 1991-09-20 2001-10-22 帝国ピストンリング株式会社 Piston ring and its manufacturing method
EP0572673B1 (en) * 1991-11-21 1997-06-25 Nisshin Steel Co., Ltd. Method of forming layer of evaporation coating
US5224249A (en) * 1992-01-21 1993-07-06 Grumman Aerospace Corporation Corrosion prevention of honeycomb core panel construction using ion implantation
US5301431A (en) * 1992-12-01 1994-04-12 Etm Corporation Hand-held cutting tool
US5347887A (en) * 1993-03-11 1994-09-20 Microsurgical Techniques, Inc. Composite cutting edge
US5445689A (en) * 1994-08-23 1995-08-29 Northrop Grumman Corporation Pulsed ion beam surface treatment process for aluminum honeycomb panels to improve corrosion resistance
FR2748851B1 (en) * 1996-05-15 1998-08-07 Commissariat Energie Atomique PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL
SE506949C2 (en) * 1996-07-19 1998-03-09 Sandvik Ab Carbide tools with borated surface zone and its use for cold working operations
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (en) 1997-12-30 2000-01-28 Commissariat Energie Atomique METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS
DE19827803A1 (en) * 1998-06-23 1999-12-30 Bortec Gmbh Wear resistant boron nitride layers are produced especially on cutting tools e.g. of titanium boride-based material or nickel-bonded hard metal
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
DE19840950A1 (en) * 1998-09-08 2000-03-09 Jagenberg Papiertech Gmbh Knife for cutting running material webs
US6338879B1 (en) * 1998-12-09 2002-01-15 Nachi-Fujikoshi Corp. Solid lubricant film for coated cutting tool and method for manufacturing same
US6200649B1 (en) * 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
AU6905000A (en) 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
RU2161661C1 (en) * 1999-08-16 2001-01-10 Падеров Анатолий Николаевич Method of applying wear-resistant coatings and improvement of durability of parts
US7229675B1 (en) * 2000-02-17 2007-06-12 Anatoly Nikolaevich Paderov Protective coating method for pieces made of heat resistant alloys
EP1347804A4 (en) * 2000-11-30 2009-04-22 Semequip Inc Ion implantation system and control method
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
FR2823599B1 (en) 2001-04-13 2004-12-17 Commissariat Energie Atomique DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING
US6723177B2 (en) 2001-07-09 2004-04-20 Southwest Research Institute Life extension of chromium coating and chromium alloys
US20040112476A1 (en) * 2001-07-09 2004-06-17 Geoffrey Dearnaley Life extension of chromium coatings and chromium alloys
US6933509B1 (en) * 2001-09-11 2005-08-23 Allasso Industries, Inc. Apparatus and method using fractionated irradiation to harden metal
DE10222453A1 (en) * 2002-05-22 2003-12-04 Voith Paper Patent Gmbh Process for the surface treatment of a doctor element
US20050100673A1 (en) * 2002-05-22 2005-05-12 Ulrich Schoof Method for the surface treatment of a doctor element
US6686595B2 (en) 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US7960709B2 (en) * 2002-06-26 2011-06-14 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20050246904A1 (en) * 2002-08-21 2005-11-10 Koninklijke Philips Electronics N.V. Cutting member having a superlattice coating
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (en) 2002-12-09 2005-10-28 Commissariat Energie Atomique METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING
FR2856844B1 (en) 2003-06-24 2006-02-17 Commissariat Energie Atomique HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT
FR2857953B1 (en) 2003-07-21 2006-01-13 Commissariat Energie Atomique STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME
FR2861497B1 (en) 2003-10-28 2006-02-10 Soitec Silicon On Insulator METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION
GB0407531D0 (en) * 2004-04-02 2004-05-05 Univ Loughborough An alloy
FR2889887B1 (en) 2005-08-16 2007-11-09 Commissariat Energie Atomique METHOD FOR DEFERING A THIN LAYER ON A SUPPORT
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
CN1966761B (en) * 2006-11-03 2010-09-22 广东世创金属科技有限公司 Method for adding rare earth into rare earth modified coating in ion plating
FR2910179B1 (en) 2006-12-19 2009-03-13 Commissariat Energie Atomique METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE
CA2680858A1 (en) * 2007-03-22 2008-09-25 Skaff Corporation Of America, Inc. Mechanical parts having increased wear-resistance
US20090018644A1 (en) * 2007-07-13 2009-01-15 Jan Weber Boron-Enhanced Shape Memory Endoprostheses
GB2450933A (en) * 2007-07-13 2009-01-14 Hauzer Techno Coating Bv Method of providing a hard coating
JP2009120405A (en) * 2007-11-09 2009-06-04 Canon Inc Glass composition for ultraviolet light and optical device using the same
FR2925221B1 (en) 2007-12-17 2010-02-19 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN LAYER
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
EP2276591B2 (en) * 2008-05-05 2020-01-22 Edgewell Personal Care Brands, LLC Method of making a razor blade
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (en) 2009-06-18 2010-12-24 Commissariat Energie Atomique METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER
RU2447194C1 (en) * 2010-08-03 2012-04-10 Федеральное государственное образовательное учреждение высшего профессионального образования "Алтайский государственный аграрный университет" (АГАУ) Method of surface impregnation of steel actuator cutting edge of tiller
US20140003959A1 (en) * 2012-06-27 2014-01-02 General Electric Company Modified rotor component and method for modifying a wear characteristic of a rotor component in a turbine system
CN103540945B (en) * 2013-10-21 2015-07-01 哈尔滨东安发动机(集团)有限公司 Thin-walled part nitridation deformation control method
CN106521444B (en) * 2016-10-21 2018-10-02 清华大学 It handles the method for M50NiL bearing steels, strengthen M50NiL bearing steels and bearing
CN106521406B (en) * 2016-10-21 2018-10-02 清华大学 It handles the method for M50 bearing steels, strengthen M50 bearing steels and bearing
JP1624793S (en) * 2018-07-24 2019-02-18
CN110042339B (en) * 2019-06-05 2021-07-06 哈尔滨工程大学 Vacuum carburization method for reducing temperature and increasing speed
CN111893431B (en) * 2020-08-17 2022-12-20 中国人民解放军陆军装甲兵学院 20Cr2Ni4A carburizing steel with high contact fatigue resistance and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH277400A (en) * 1948-01-08 1951-08-31 Boehler & Co Ag Geb Process for increasing the resistance of the surface of steel parts to wear, especially at high temperatures.
CH342980A (en) * 1950-11-09 1959-12-15 Berghaus Elektrophysik Anst Process for the diffusion treatment of pipes made of iron and steel or their alloys
US3341352A (en) * 1962-12-10 1967-09-12 Kenneth W Ehlers Process for treating metallic surfaces with an ionic beam
US3573098A (en) * 1968-05-09 1971-03-30 Boeing Co Ion beam deposition unit
GB1380583A (en) * 1971-01-21 1975-01-15 Gillette Co Cutting edges

Also Published As

Publication number Publication date
IE37888L (en) 1974-02-09
JPS4958031A (en) 1974-06-05
CA1006844A (en) 1977-03-15
JPS547261B2 (en) 1979-04-05
CH586287A5 (en) 1977-03-31
GB1423412A (en) 1976-02-04
DE2340282C3 (en) 1979-08-23
IL42599A0 (en) 1973-08-29
SE401840B (en) 1978-05-29
ATA696173A (en) 1975-03-15
AT326971B (en) 1976-01-12
IE37888B1 (en) 1977-11-09
FR2195704A1 (en) 1974-03-08
US3915757A (en) 1975-10-28
FR2195704B1 (en) 1977-08-26
IT989807B (en) 1975-06-10
DE2340282B2 (en) 1978-12-21
ZA734395B (en) 1974-06-26
DE2340282A1 (en) 1974-02-21

Similar Documents

Publication Publication Date Title
IL42599A (en) Ion plating method and product therefrom
US3988955A (en) Coated steel product and process of producing the same
Christiansen et al. Low-temperature gaseous surface hardening of stainless steel: The current status
US3953178A (en) Coated metal product
Sista et al. Electrochemical boriding and characterization of AISI D2 tool steel
EP0474369A1 (en) Diamond-like carbon coatings
CA1041881A (en) Coated steel product and process of producing the same
Dearnaley Adhesive, abrasive and oxidative wear in ion-implanted metals
Fu et al. Deposition of diamond coating on pure titanium using micro-wave plasma assisted chemical vapor deposition
Blawert et al. Plasma immersion ion implantation of pure aluminium at elevated temperatures
Sousa et al. Cathodic cage nitriding of AISI 409 ferritic stainless steel with the addition of CH4
US6723177B2 (en) Life extension of chromium coating and chromium alloys
RU2415966C1 (en) Procedure for coating items out of hard alloys
Grant et al. Ion beam techniques for material modification
Ovcharenko et al. Improving durability of cermets for metal cutting by generation of subsurface multilevel structures
JPH036219B2 (en)
Ojika et al. Low-pressure diamond nucleation and growth on Cu substrate
Yan et al. A new technique for deposition of titanium carbonitride films at room temperature by high energy density pulse plasma
Moretti et al. Duplex treatment on AISI D2 tool steel: plasma nitriding and reactive deposition of TiN and TiAlN films via magnetron sputtering
Thongtem et al. High‐temperature nitridation of the intermetallic compound TiAl at 1000–1200 K
RU2167216C1 (en) Process of hardening of hard-alloy cutting tool
Yusof et al. Diffusion kinetics of boronized compacted graphite iron
Manory Some principles for understanding surface modification of metals by glow discharge processes
Hutchings et al. Plasma immersion ion implantation at elevated temperatures
Grill et al. Boriding of steel in a cold RF plasma of diborane in argon