IL42599A - Ion plating method and product therefrom - Google Patents
Ion plating method and product therefromInfo
- Publication number
- IL42599A IL42599A IL42599A IL4259973A IL42599A IL 42599 A IL42599 A IL 42599A IL 42599 A IL42599 A IL 42599A IL 4259973 A IL4259973 A IL 4259973A IL 42599 A IL42599 A IL 42599A
- Authority
- IL
- Israel
- Prior art keywords
- substrate
- metal
- coating
- ions
- coated
- Prior art date
Links
- 238000007733 ion plating Methods 0.000 title description 18
- 239000000758 substrate Substances 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- -1 thulium actinium Chemical compound 0.000 claims description 3
- 229910052764 Mendelevium Inorganic materials 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- MQVSLOYRCXQRPM-UHFFFAOYSA-N mendelevium atom Chemical compound [Md] MQVSLOYRCXQRPM-UHFFFAOYSA-N 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 240000002989 Euphorbia neriifolia Species 0.000 claims 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims 1
- HAWOWGSQUYVHKC-UHFFFAOYSA-N [Hf].[Mo] Chemical compound [Hf].[Mo] HAWOWGSQUYVHKC-UHFFFAOYSA-N 0.000 claims 1
- 229910001566 austenite Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 38
- 229910052786 argon Inorganic materials 0.000 description 19
- 229910000975 Carbon steel Inorganic materials 0.000 description 14
- 238000005520 cutting process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 10
- 239000010962 carbon steel Substances 0.000 description 10
- 239000010959 steel Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910000734 martensite Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910001423 beryllium ion Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005255 carburizing Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BHMLFPOTZYRDKA-IRXDYDNUSA-N (2s)-2-[(s)-(2-iodophenoxy)-phenylmethyl]morpholine Chemical compound IC1=CC=CC=C1O[C@@H](C=1C=CC=CC=1)[C@H]1OCCNC1 BHMLFPOTZYRDKA-IRXDYDNUSA-N 0.000 description 1
- YPFNIPKMNMDDDB-UHFFFAOYSA-K 2-[2-[bis(carboxylatomethyl)amino]ethyl-(2-hydroxyethyl)amino]acetate;iron(3+) Chemical compound [Fe+3].OCCN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O YPFNIPKMNMDDDB-UHFFFAOYSA-K 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052695 Americium Inorganic materials 0.000 description 1
- 229910052694 Berkelium Inorganic materials 0.000 description 1
- 229910052686 Californium Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052685 Curium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052690 Einsteinium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052687 Fermium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052766 Lawrencium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052781 Neptunium Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- SAIFTDNQIARTIU-UHFFFAOYSA-N [N].CCC Chemical compound [N].CCC SAIFTDNQIARTIU-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- LXQXZNRPTYVCNG-UHFFFAOYSA-N americium atom Chemical compound [Am] LXQXZNRPTYVCNG-UHFFFAOYSA-N 0.000 description 1
- PWVKJRSRVJTHTR-UHFFFAOYSA-N berkelium atom Chemical compound [Bk] PWVKJRSRVJTHTR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- HGLDOAKPQXAFKI-UHFFFAOYSA-N californium atom Chemical compound [Cf] HGLDOAKPQXAFKI-UHFFFAOYSA-N 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CKBRQZNRCSJHFT-UHFFFAOYSA-N einsteinium atom Chemical compound [Es] CKBRQZNRCSJHFT-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- MIORUQGGZCBUGO-UHFFFAOYSA-N fermium Chemical compound [Fm] MIORUQGGZCBUGO-UHFFFAOYSA-N 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LFNLGNPSGWYGGD-UHFFFAOYSA-N neptunium atom Chemical compound [Np] LFNLGNPSGWYGGD-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/06—Surface hardening
- C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/582—Thermal treatment using electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Chemical Vapour Deposition (AREA)
Description
PDian nsinm o¾ a ■ns*-*'? rra-w ION PLATING METHOD AND PRODUCT THEREFROM Γ0 ALL WHOM IT MAYsCONCER : , ' Be : it known that I, NIELS N. ENGEL, a citizen of the United States of America, residing at Atlanta, Fulton County, Georgia, lave invented -certain new and useful improvements in an .„.;:·. ION PLATING METHOD AND PRODUCT THEREFROM for which the, following is a specification.
ABSTRACT OF THE DISCLOSURE ^ · , ! : i ·.
An' ion plating method and product therefrom wherein ions of a metal; are implanted into or/and plated onto a substrate to increase the hardness of the surface. After plating, the product can be reacted with carbon, boron, nitrogen or another metal, thereby forming the carbide, boride, nitride or metal compound of the plating metal coating. Hardening of the product by quenching follows which produces a cutting tool of superior qualities.
BACKGROUND OF THE INVENTION This invention relates to an improved metalic deposition on a substrate and more particularly to an ion plating method and product therefrom.
The cutting power and edge life of knife blades depend . upon the presence of a matrix structure of slightly tempered martensite Of high hardness and the embedding of a sufficient number of finely, and uniformly distributed carbides in this matrix There are many procedures utilized in the formation of cutting tools to provide a cutting edge of great hardness and durability.- ' With stainless steel, for example, the carbon content of the steel substrate has been increased in order to increase the proportion of hard chromium carbides in the structure when used as cutting materials. Other carbide -forming alloying constituents, such as molybdenum, tungsten, vanadium, titanium and the like have also been added to the substrate. coat of the carbide, boride, nitride or metal compound to form an excellent cutting edge.
It is, therefore, a primary object of the present invention to provide a method of producing improved cutting edges and products therefrom.
Another object of the present invention is to provide a method of implanting ions of a metal into a steel or iron containing alloy substrate to form carbides of the metal within the martensite of the hardened substrate, thereby increasing the surface hardness of the substrate to produce an improved cutting tool Another object of the present invention is to provide a method of ion plating a metal onto the surface of a substrate.
A further object of the present invention is to provide a method of carburizing, boriding, nitriding or metallizing an ion plated substrate.
;A still further object of the present invention is to . provide cutting.and abrading tools which have superior cutting power, durability, strength and corrosion and wear resistance; Another object of the present invention is to provide a method of ion plating which is adaptable to substrates of steel or iron containing alloys.
'■■ An- object of the present invention is to provide an iron plated product which is very resistant to thermal shock.
Another object of the present invention is to provide an improved cutting edge which has a low coefficient of friction.
Still other objects and advantages of the present invention will become apparent , after reading the accompanying description of the selected illustrative embodiment.
DESCRIPTION OF THE FIGURES OF DRAWING Figure 1 is a : photomicrograph of plain carbon steel treated in accordance with the present invention; and Figure 2 is a photomicrograph of plain carbon steel which was given the same heat treatment but which has not been ion implanted.
. DESCRIPTION OF THE INVENTION Ion implanting in any metal will generally cause an increase in the hardness and strength of the metal. Ion implantation into a carbon containing steel combined with a hardening treatment leads to a superhard martensite independent of the implanted material. In ion implanting a steel substrate, the carbon content of the substrate should range from 0.31 to 1.8% b weight, with the optimum range being from 0.5% to 0.8% by weight. A substrate having a carbon content below 0.3% is called "mild" steel and is too soft for cutting tools and various wear resistant objects. Their coats will easily break down if the support or substrate is much softer" and weaker than the coating itself.
Therefore^ substrates should be hard, preferably hardened steel. There is actually no maximum limit of the carbon percentage within the. substrate; it depends on how brittle it is desired that the substrate be after it has been quenched as discussed below. The substrate used in the present invention can be any steel or iron containing alloy.
The ion implantation yields the advantage that the hardened matrix is harder than martensite obtained by normal hardening implanted matrix constitutes a method to obtai the hardest Coats on a super ard matrix, which cannot be obtained by any other method*. At the same time* the adherence between coat and matrix is better than can be obtained by any other method* Th fj&re step in the io plating process of the present inventio is to clean the substeate. The substrate is cleaned by any suitable method and then is quickly mounted on a metal holder with the edges to be ion plated exposed. The holder is trans erred to a vacuum chamber for ion Implantation and plating wherein the substrate forms the cathode* The chamber is pumped down to a vacuum of 2xlO"¾nmHg or better with frequent flushing with argon gas. Such a low pressure is necessary to support the plasma that is created therein as described below*' Argon gas is let into the chamber* An electrical potential is then applied to the cathode(substrate) and Is radualincreased until a pink argon plasma is formed. Argon is used as It will not react with the substrate or with the ion plating material and is heavy so as to increase the Impact force of the ions on the substrate whereby better cleaning action is achieved* The plasma forming starts in the range of 1KV and 50 mamps and can then be maintained to much lower potentials* The power setting can be varied according to the needs* The object to be Ion plated Is first ion cl eaned with the argon plasma* The argon sputters off any atomic impurities or dirt that are present on the substrate surface, and Inherently implants this inert gas into the surface of the substrate to produce a subsur ace containing the argon (an iner gas) as an element which is insoluble in the substrate* The ion plating material on a filament (such as a tungsten wire) or from a poo of melted meta heated by an electron gun forms the anode within the ohamber* By passing sufficient current through this filament while the argon plasma is holding,, the filament (anode) Is gradually heated until the material on the anode melts and, aided by the substantial vaouum within the 6a - chamber, then vaporizes. These ionized particles are attracted^ to the athode (object to be ion plated) due to the great potential .difference (which can vary from 500V to 50,000V), and thus , iom mplantation and/or plating is . accomplished .
Actually, the first ions that strike the substrate surface are implanted within the substrate and cause a gradual transition between the substrate and the surface. As the sub- strate becomes "saturated" by the ion implantation, the remainder of the ions are deposited on the substrate surface.
The "penetration depth" of the ion implantation into the substrate depends on the hardness of the substrate. Generally a substrate having a hardness of less than 50 Rockwell C is preferred. ' ■ ".
When the 'implanted ions react with the carbon present in the substrate , it , is not known at this time whether they form a precipitate or are in "solution" within the crystalline · lattice of the substrate. This is due to the fact that compounds formed b the implanted ions are too small to be observed by , present day methods .
■ /^..The time of ion plating can be varied from fractions of seconds to several minutes . During the ion plating process, the pressure in the chamber does drop somewhat, but should be maintained at the right level by adjusting the argon pressure of metal vaporization.
.Ob ects Ion Plated: The above ion plating procedure can be performed on a number of steel or iron containing alloys, such as Tazor blades , industrial blades,, band saws , files , nails, ; etc.■, as.''.well as other metals and shapes including meat chopper -Ion Plating Materials : A wide range o£ elements can be ion Dlated onto the substrate. These include all of the refractory elements (scandium, titanium, zirconium, hafnium, ; vanadium:j'rcolumbium, tantalum, chromium, molybdenum and tungsten) the rare-earth elements (lanthanum, cerium, praseodymium, neodymiu , promethium,. samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, yttrium, ytterbium, · and lutetium) the actinide series (actinium, thorium, protactinium, * uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, mendelevium, nobelium, and lawrencium)',, iron , cobalt, nickel and boron. Some of these metals require a high powered vaporization unit, such as an electron gun, in order to evaporate the same. In industrial production, electron gun vaporization would be preferred.
.·; Carburizing, Boridin , Nitriding, and Metallizing: Wear resistant and corrosion resistant cutting edges are obtained with superhard materials which can be added to the ion implanted substrate surface . The hardest known materials are carbides, borides,; and nitrides and compounds of transistion elements with second period elements, for example TiC, ScN, VC, Cr^Cz, TiB, B4C, and BN. Additionally, any metal included in the above list of ion plating materials , other than the metal already plated on the substrate, tan be. added to the ion implanted substrate surface. These materials can be added to the substrate as compounds; however , they are very stable and difficult to evaporate. The best procedure . is to ion plate the pure metal (Ti , Cr, B, Sc, etc.) onto the substrate, and then convert the metal to the respective carbids boride or nitride . were carburized in a methane and hydrogen atmosphere and hardened by water quenching. It was found that there was a difference &ϊ nearly 300 points in the Knoop hardness between the two: '' '· ' ■ Annealed file 1120 Khn Unannealed file 825 Khn It is believed that this difference in hardness is caused by the ability of dislocations to penetrate into the material. The mechanism of creating superhard martensite is most probably that atoms impinging on the metal surface initiate a dislocation which moves to a certain depth into the material carrying the impinged atom with it. Soft materials are permeable to dislocations and can therefore absorb impinging atoms to penetrate below the surfac An. advantage of the present invention is that it. produces an adhesion between the coating and the substrate which is greater than the strength of the substrate. Glue was placed on a portion of the coated substrate. In an attempt to pull the coating away from the substrate surface, either the substrate or the glue broke under the tension. The "joint" or coating/substrate interface never did break.
The method of this invention produces a coating on a substrate which is very resistant to thermal shock. Extreme and sudden temperature changes do not effect either the coating or the inti This can be obtained by the selection of a coat with a smaller thermal expansion than the substrate. When cooled after plating at a somewhat elevated temperature, the coat will be under compressive stresses Also, the selection of a coat materiap. with a low coefficient of friction will prevent heating through rubbing such as with chopper plates in meai cutting. A titanium Figure Ids a photomicrograph of a sample A of plain carbon steel ion plated with titanium, carburized by a plasm .£s formed by a nitrogen-propane mixture and quenched in water.
/Figure 2 is a photomicrograph of a sample B of the same plain carbon steel carburized and quenched as sample A but without) ion plating. The test load for both samples A and B was 100 grams. The magnification of Figures 1 and 2 is 250X. As seen in the following Table I, the Knoop hardness values for the carburized sample (sample B) are fairly constant and are similar to that of a normal steel. However, for the ion implanted sample (sample A), the surface hardness is very much higher. rs Sample B 885 885 880 880 910 880 'Typical hardness values for samples under varying' experi' mental conditions of voltage, current, ion plating material and time of ion plating are presented in Table II. ater a on a ng me o age u Ion Material and Ion Plating (KV) (mamps) Medium Plated .Atmosphere (Minutes) 1. Plain Ti/Argon 100 C+H Carbon Steel 2. } Plain r Ti/Argon 2 100 C+H '·■ " Carbon Steel 3. Plain . Ti/Argon , 2 . 100 C+H Carbon Steel 4. ; Plain - Ti/Argon ½ 2 100 C+H Carbon Steel 5. Plain Ti/Argon 5 2 100 C+H. Carbon Steel 6 Plain Fe/Argon 2 2 100 C+H.
Carbon Steel ?V Plain Al/Argon 1 2 100 C+H. 3 Carbon Steel 8. Plain ·. ' Ti/Propane 2 2 100 Impulse Carbon Steel Hardene 9. Steel File - Ti/Argon 3 3 100 ¾+m Annealed 10. Steel File Ti/Argon 3 3 100· t+H. (Hardened) 11. Plain None -C,HR Carbon Steel 12. Plain None Impulse Carbon Steel Hardene VOTE:1--*'11 thf> " 1^ were nn cleaned for 2 minutes in argon except #2.
•C-cn^lmn-contair.inc caseous compounl. such as methane.
Claims (1)
1. Claims A method of producing a ooated bod comprising bombarding a substrate with a in ionic tio with such substrate is reactive and at a sufficient for the me a ions penetrate into said continuing the bombardment of said substrate with said meta a suffioient length of time to a coating of said metal over the surf ce of the implanted metal of said and reacting the coating on the sur with a substance which imparts greater hardness to the method according to Claim 1 wherein said hardening is accomplished by reacting the coating with a hardening chemica selected the group consisting of nitrogen and a seleoted one of the metals with which said substrate is reaotive othe than said bombarding A method according Claim 2 or 3 wherein said ning further includes heat treating said coated A method aooording to of Claims 1 to 3 including the step of leaning sur of said substrate prior to ste A method according to of 1 to including the steps of heat ng substrate to the austenite range of the substrate and cooling it with a supe A method according to 5 wherein said substrate is a carbon containing A method according to Claim 6 wherei said carbon containing substrate has a carbon content ging from to by A method according to Claim wherein the amount of carbon in said substrate ranges from to by A method according to any of Claims 1 to comprising the steps o bombarding a surface of the substrate with ions of a metal seleoted from the grou consisting of thulium actinium i e and boron to implant said ions to a preselected penetratio depth within continuing the bombardment until said substrate had become saturated with said ions within said lected further continuing said bombardmen to said ions to plate the surface of and reacting said io with element seleoted from the group consisting of nitrogen a seleoted of said metals other than the implanted so as to form the nitride or compound of the respective plated method of producing a ooated substantially hereinbefore coated whenever obtained by the according to any of Claims to coated product a iro an implanted subsur ace along sur ace of said said subsurface containing an element which is insoluble in aaid and coatin along said subsurface o a coating metal and a hardening substance reacted with said metal said substance with said coating a layer which is harder the coating itsel coated metal produc 12 wherein said insoluble is an inert gas and said coatin metal is the group consisting of soandium hafnium molybdenum s t thor mendelevium iron cobalt nickel A ooated metal product according to Claim 12 or wherein said hardening substance is selected group consisting of nitrogen and A coated metal product according to any of Claims 12 to 14 a knoop hardness in excess of insufficientOCRQuality
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US279244A US3915757A (en) | 1972-08-09 | 1972-08-09 | Ion plating method and product therefrom |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL42599A0 IL42599A0 (en) | 1973-08-29 |
| IL42599A true IL42599A (en) | 1977-02-28 |
Family
ID=23068203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL42599A IL42599A (en) | 1972-08-09 | 1973-06-26 | Ion plating method and product therefrom |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3915757A (en) |
| JP (1) | JPS547261B2 (en) |
| AT (1) | AT326971B (en) |
| CA (1) | CA1006844A (en) |
| CH (1) | CH586287A5 (en) |
| DE (1) | DE2340282C3 (en) |
| FR (1) | FR2195704B1 (en) |
| GB (1) | GB1423412A (en) |
| IE (1) | IE37888B1 (en) |
| IL (1) | IL42599A (en) |
| IT (1) | IT989807B (en) |
| SE (1) | SE401840B (en) |
| ZA (1) | ZA734395B (en) |
Families Citing this family (105)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT385058B (en) * | 1946-07-17 | 1988-02-10 | Vni Instrument Inst | METHOD FOR MOUNTING CUTTING TOOLS |
| JPS51115286A (en) * | 1975-04-03 | 1976-10-09 | Anelva Corp | Ornament |
| US4022947A (en) * | 1975-11-06 | 1977-05-10 | Airco, Inc. | Transparent panel having high reflectivity for solar radiation and a method for preparing same |
| DE3030149C3 (en) * | 1979-08-09 | 1996-12-19 | Mitsubishi Materials Corp | Cutting blade and method for its production |
| JPS5656636A (en) * | 1979-10-13 | 1981-05-18 | Mitsubishi Electric Corp | Processing method of fine pattern |
| GB2075069B (en) * | 1979-12-03 | 1984-09-12 | Atomic Energy Authority Uk | Wear resistance of metals |
| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| JPS5779169A (en) * | 1980-11-06 | 1982-05-18 | Sumitomo Electric Ind Ltd | Physical vapor deposition method |
| US4645715A (en) * | 1981-09-23 | 1987-02-24 | Energy Conversion Devices, Inc. | Coating composition and method |
| US4532149A (en) * | 1981-10-21 | 1985-07-30 | The United States Of America As Represented By The United States Department Of Energy | Method for producing hard-surfaced tools and machine components |
| GB2123039B (en) * | 1982-03-23 | 1985-10-23 | Atomic Energy Authority Uk | Coatings for cutting implements |
| AT381268B (en) * | 1982-05-05 | 1986-09-25 | Ver Edelstahlwerke Ag | TOOL AND METHOD FOR THE PRODUCTION THEREOF |
| GB2125442B (en) * | 1982-05-24 | 1986-02-19 | Atomic Energy Authority Uk | A procedure for the hardening of materials |
| US4486247A (en) * | 1982-06-21 | 1984-12-04 | Westinghouse Electric Corp. | Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof |
| US4751100A (en) * | 1983-06-20 | 1988-06-14 | Matsushita Electric Industrial Co., Ltd. | Magnetic recording medium and method for making the same |
| JPS6115967A (en) * | 1984-06-29 | 1986-01-24 | Sumitomo Electric Ind Ltd | Surface treatment |
| GB8423255D0 (en) * | 1984-09-14 | 1984-10-17 | Atomic Energy Authority Uk | Surface treatment of metals |
| GB8512542D0 (en) * | 1985-05-17 | 1985-06-19 | Atomic Energy Authority Uk | Improved cutting edges |
| US5250327A (en) * | 1986-04-28 | 1993-10-05 | Nissin Electric Co. Ltd. | Composite substrate and process for producing the same |
| US4737234A (en) * | 1986-08-18 | 1988-04-12 | Westinghouse Electric Corp. | Method and apparatus for permanently recording high neutron fluence |
| US4744938A (en) * | 1986-08-18 | 1988-05-17 | Westinghouse Electric Corp. | Method and apparatus for producing ultralowmass fissionable deposits for reactor neutron dosimetry by recoil ion-implantation |
| AT388394B (en) * | 1987-01-09 | 1989-06-12 | Vni Instrument Inst | METHOD FOR PRODUCING CUTTING TOOL |
| US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
| US5088202A (en) * | 1988-07-13 | 1992-02-18 | Warner-Lambert Company | Shaving razors |
| GB2227755B (en) * | 1988-12-08 | 1993-03-10 | Univ Hull | A process for improving the wear and corrosion resistance of metallic components |
| US5061512A (en) * | 1989-02-21 | 1991-10-29 | General Electric Company | Method of producing lubricated bearings |
| US5242741A (en) * | 1989-09-08 | 1993-09-07 | Taiho Kogyo Co., Ltd. | Boronized sliding material and method for producing the same |
| JP2786283B2 (en) * | 1989-12-22 | 1998-08-13 | 株式会社日立製作所 | Surface modification method and apparatus, and surface modified substrate |
| US5139876A (en) * | 1990-03-05 | 1992-08-18 | Cleveland State University | Ceramic article having wear resistant coating |
| US5167725A (en) * | 1990-08-01 | 1992-12-01 | Ultracision, Inc. | Titanium alloy blade coupler coated with nickel-chrome for ultrasonic scalpel |
| CA2065581C (en) | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
| US5393573A (en) * | 1991-07-16 | 1995-02-28 | Microelectronics And Computer Technology Corporation | Method of inhibiting tin whisker growth |
| FR2681472B1 (en) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
| JP3221892B2 (en) * | 1991-09-20 | 2001-10-22 | 帝国ピストンリング株式会社 | Piston ring and its manufacturing method |
| DE69220566T2 (en) * | 1991-11-21 | 1998-02-19 | Nisshin Steel Co Ltd | METHOD FOR DEVOLVING A COATING |
| US5224249A (en) * | 1992-01-21 | 1993-07-06 | Grumman Aerospace Corporation | Corrosion prevention of honeycomb core panel construction using ion implantation |
| US5301431A (en) * | 1992-12-01 | 1994-04-12 | Etm Corporation | Hand-held cutting tool |
| US5347887A (en) * | 1993-03-11 | 1994-09-20 | Microsurgical Techniques, Inc. | Composite cutting edge |
| US5445689A (en) * | 1994-08-23 | 1995-08-29 | Northrop Grumman Corporation | Pulsed ion beam surface treatment process for aluminum honeycomb panels to improve corrosion resistance |
| FR2748851B1 (en) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL |
| SE506949C2 (en) * | 1996-07-19 | 1998-03-09 | Sandvik Ab | Carbide tools with borated surface zone and its use for cold working operations |
| US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
| US6159824A (en) | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Silicon-on-silicon wafer bonding process using a thin film blister-separation method |
| US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
| US6077572A (en) * | 1997-06-18 | 2000-06-20 | Northeastern University | Method of coating edges with diamond-like carbon |
| US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
| FR2773261B1 (en) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS |
| DE19827803A1 (en) * | 1998-06-23 | 1999-12-30 | Bortec Gmbh | Wear resistant boron nitride layers are produced especially on cutting tools e.g. of titanium boride-based material or nickel-bonded hard metal |
| US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
| DE19840950A1 (en) * | 1998-09-08 | 2000-03-09 | Jagenberg Papiertech Gmbh | Knife for cutting running material webs |
| US6338879B1 (en) * | 1998-12-09 | 2002-01-15 | Nachi-Fujikoshi Corp. | Solid lubricant film for coated cutting tool and method for manufacturing same |
| US6200649B1 (en) * | 1999-07-21 | 2001-03-13 | Southwest Research Institute | Method of making titanium boronitride coatings using ion beam assisted deposition |
| US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
| US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
| US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
| AU6905000A (en) | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
| RU2161661C1 (en) * | 1999-08-16 | 2001-01-10 | Падеров Анатолий Николаевич | Method of applying wear-resistant coatings and improvement of durability of parts |
| US7229675B1 (en) * | 2000-02-17 | 2007-06-12 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
| US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
| CN100385605C (en) * | 2000-11-30 | 2008-04-30 | 赛米奎珀公司 | Ion implantation system and ion source |
| RU2195388C2 (en) * | 2001-01-09 | 2002-12-27 | НИИ интроскопии Томского политехнического университета | Method for strengthening hard-alloy and diamond tools for drilling rocks |
| FR2823599B1 (en) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING |
| US6723177B2 (en) | 2001-07-09 | 2004-04-20 | Southwest Research Institute | Life extension of chromium coating and chromium alloys |
| US20040112476A1 (en) * | 2001-07-09 | 2004-06-17 | Geoffrey Dearnaley | Life extension of chromium coatings and chromium alloys |
| US6933509B1 (en) * | 2001-09-11 | 2005-08-23 | Allasso Industries, Inc. | Apparatus and method using fractionated irradiation to harden metal |
| US20050100673A1 (en) * | 2002-05-22 | 2005-05-12 | Ulrich Schoof | Method for the surface treatment of a doctor element |
| DE10222453A1 (en) * | 2002-05-22 | 2003-12-04 | Voith Paper Patent Gmbh | Process for the surface treatment of a doctor element |
| US20040002202A1 (en) * | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
| US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
| KR100797138B1 (en) * | 2002-06-26 | 2008-01-22 | 세미이큅, 인코포레이티드 | Complementary Metal Oxide Semiconductor Device, and Method of Forming Metal Oxide Semiconductor Device and Complementary Metal Oxide Semiconductor Device |
| WO2004018166A1 (en) * | 2002-08-21 | 2004-03-04 | Koninklijke Philips Electronics N.V. | A cutting member having a superlattice coating |
| US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
| FR2848336B1 (en) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING |
| FR2856844B1 (en) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT |
| FR2857953B1 (en) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME |
| FR2861497B1 (en) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION |
| GB0407531D0 (en) * | 2004-04-02 | 2004-05-05 | Univ Loughborough | An alloy |
| FR2889887B1 (en) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | METHOD FOR DEFERING A THIN LAYER ON A SUPPORT |
| RU2353778C2 (en) * | 2005-11-03 | 2009-04-27 | ООО "НПП Уралавиаспецтехнология" | Method for protection of steam and gas turbines blades against salt and gas corrosion, gas-abrasive and drop-impingement erosion |
| US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
| US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
| US9362439B2 (en) * | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
| US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
| CN1966761B (en) * | 2006-11-03 | 2010-09-22 | 广东世创金属科技有限公司 | Method for adding rare earth into rare earth modified coating in ion plating |
| FR2910179B1 (en) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE |
| WO2008116159A2 (en) * | 2007-03-22 | 2008-09-25 | Skaff Corporation Of America, Inc. | Mechanical parts having increased wear-resistance |
| US20090018644A1 (en) * | 2007-07-13 | 2009-01-15 | Jan Weber | Boron-Enhanced Shape Memory Endoprostheses |
| GB2450933A (en) * | 2007-07-13 | 2009-01-14 | Hauzer Techno Coating Bv | Method of providing a hard coating |
| JP2009120405A (en) * | 2007-11-09 | 2009-06-04 | Canon Inc | Glass composition for ultraviolet light and optical device using the same |
| FR2925221B1 (en) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN LAYER |
| US20090200494A1 (en) * | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
| US20100107425A1 (en) * | 2008-05-05 | 2010-05-06 | Eveready Battery Company Inc. | Razor Blade and Method of Manufacture |
| US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
| US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
| FR2947098A1 (en) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER |
| RU2447194C1 (en) * | 2010-08-03 | 2012-04-10 | Федеральное государственное образовательное учреждение высшего профессионального образования "Алтайский государственный аграрный университет" (АГАУ) | Method of surface impregnation of steel actuator cutting edge of tiller |
| US20140003959A1 (en) * | 2012-06-27 | 2014-01-02 | General Electric Company | Modified rotor component and method for modifying a wear characteristic of a rotor component in a turbine system |
| CN103540945B (en) * | 2013-10-21 | 2015-07-01 | 哈尔滨东安发动机(集团)有限公司 | Thin-walled part nitridation deformation control method |
| CN106521406B (en) * | 2016-10-21 | 2018-10-02 | 清华大学 | It handles the method for M50 bearing steels, strengthen M50 bearing steels and bearing |
| CN106521444B (en) * | 2016-10-21 | 2018-10-02 | 清华大学 | It handles the method for M50NiL bearing steels, strengthen M50NiL bearing steels and bearing |
| JP1624793S (en) * | 2018-07-24 | 2019-02-18 | ||
| CN110042339B (en) * | 2019-06-05 | 2021-07-06 | 哈尔滨工程大学 | A vacuum carburizing method for cooling and increasing speed |
| CN111893431B (en) * | 2020-08-17 | 2022-12-20 | 中国人民解放军陆军装甲兵学院 | 20Cr2Ni4A carburizing steel with high contact fatigue resistance and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH277400A (en) * | 1948-01-08 | 1951-08-31 | Boehler & Co Ag Geb | Process for increasing the resistance of the surface of steel parts to wear, especially at high temperatures. |
| CH342980A (en) * | 1950-11-09 | 1959-12-15 | Berghaus Elektrophysik Anst | Process for the diffusion treatment of pipes made of iron and steel or their alloys |
| US3341352A (en) * | 1962-12-10 | 1967-09-12 | Kenneth W Ehlers | Process for treating metallic surfaces with an ionic beam |
| US3573098A (en) * | 1968-05-09 | 1971-03-30 | Boeing Co | Ion beam deposition unit |
| GB1380583A (en) * | 1971-01-21 | 1975-01-15 | Gillette Co | Cutting edges |
-
1972
- 1972-08-09 US US279244A patent/US3915757A/en not_active Expired - Lifetime
-
1973
- 1973-06-20 CA CA174,527A patent/CA1006844A/en not_active Expired
- 1973-06-26 IL IL42599A patent/IL42599A/en unknown
- 1973-06-26 GB GB3032873A patent/GB1423412A/en not_active Expired
- 1973-06-27 ZA ZA734395A patent/ZA734395B/en unknown
- 1973-07-06 IE IE1147/73A patent/IE37888B1/en unknown
- 1973-07-09 IT IT51344/73A patent/IT989807B/en active
- 1973-08-06 FR FR7328685A patent/FR2195704B1/fr not_active Expired
- 1973-08-08 JP JP8857173A patent/JPS547261B2/ja not_active Expired
- 1973-08-08 SE SE7310843A patent/SE401840B/en unknown
- 1973-08-08 AT AT696173A patent/AT326971B/en not_active IP Right Cessation
- 1973-08-08 CH CH1148473A patent/CH586287A5/xx not_active IP Right Cessation
- 1973-08-09 DE DE2340282A patent/DE2340282C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4958031A (en) | 1974-06-05 |
| DE2340282C3 (en) | 1979-08-23 |
| GB1423412A (en) | 1976-02-04 |
| FR2195704B1 (en) | 1977-08-26 |
| FR2195704A1 (en) | 1974-03-08 |
| SE401840B (en) | 1978-05-29 |
| IT989807B (en) | 1975-06-10 |
| AT326971B (en) | 1976-01-12 |
| IE37888L (en) | 1974-02-09 |
| DE2340282B2 (en) | 1978-12-21 |
| ATA696173A (en) | 1975-03-15 |
| US3915757A (en) | 1975-10-28 |
| ZA734395B (en) | 1974-06-26 |
| IE37888B1 (en) | 1977-11-09 |
| CH586287A5 (en) | 1977-03-31 |
| IL42599A0 (en) | 1973-08-29 |
| DE2340282A1 (en) | 1974-02-21 |
| CA1006844A (en) | 1977-03-15 |
| JPS547261B2 (en) | 1979-04-05 |
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