IL39449A - Method for producing images - Google Patents

Claims (1)

1. CLAIMS The method of forming an image comprising the step of providing a consisting essentially bf a memory material physically adhered directly to a which is substantially chemically inert with respect to the memory said memory material being capable of having selected portions thereof undergo a physical change in structure between at least two stable structural tions whereby its physical adherence to the substrate is said layer normally being in one of said conditions and wherein said memory material is capable of being changed to the other of said conditions in response to the cation of energy above a certain the step of selectively applying energy to said at any desired selected portions thereof and at a level higher than said threshold for effecting a physical change in structure in said layer at said desired selected portions from said stable structural condition to the other stable structural condition to alter the physical adherence of said layer with respect to the substrate in any desired and the step of separating said memory material said areas in one of said stable structural conditions having the lesser herence to the substrate from said substrate and removin the memory material having the lesser adherence from layer of memory material so that an image is produced sponding to said desired The method of formin an image comprising the step of providing a layer of a memory material to a said memory material being capable of substantially changing its adhesiveness to said substrate it is subjected to effects of the step of selectively subjecting selected areas of said layer of material to the effects of to produce a stantial differential in the adherence of the memory material to said substrate in those which have been subjected to energy as against which not subjected to said and the step of separating said said where it has lesser from substrate and removing the memory material ng the lesser adherence from said layer of 15 memory material to produce wherein the high parts are formed by memory material having adherence to said substrate are formed said The of Claim which the substrate i s an active su strate The of Clai which the substrate is substrate The method of Claim in whic the substrate is a material which exhibits at least some degree of thermoplastlcity The of Claim which said memory material the where has the separated and removed by mechanical 7 The method of Claim which said memory material in the where it has the lesser is separated and 8 The method of in which said material in the where has the lesser is separated and removed by means an The method of Claim 1 in memory material a glassy composition comprising as an effective nent at least one chalcogenide element than sulfur and 10 The of Claim in which said memory material glassy chalcogenide composition comprising as an effective nent at least one element other The method of 1 in which the memory material is material which is capable of having portions thereof physically changed structure between one stable and at least another stable said layer mally being in one of said conditions and capable of bein altered to the other condition by the application of energy to duce a substantial differential the adhesiveness of said memor to 12 The method of Claim 1 which the memory material is capable of a substantial change from one stable morphological state to at least another stable by the application of energy to said memory whereby the being one of morphological states has a higher adherence to substrate than the material being said morphological 13 The method of Claim 1 which the memory material amorphous and wherein the memory material is capable of into a crystalline state uxion application of energy The method of Claim 1 in which the memory material is amorphous and wherein the memory material is capable of being trans formed crystalline state by the application of energy and wherein the memory material being in the amorphous state has a substantially highe to substrate the material being the crystalline The Claim 1 which material is crystalline being capable of transformed by energy into an amorphous and wherein the amorphous memory material has a substantially higher adherence to the substrate than the crystalline form of the memory 16 The method of Claim 1 in which the memory material is strongly adhered to said an wherein the subjection of selected areas of memory material to energy produces a stantial differential the adhesiveness memory material to substrate without being accompanied by a noticeable phological change said memory The method Claim 1 in which said substrate is a material and in which said memory material substantially amorphous being capable of transformed by said energy into a different morphological state of crystalline order said material having higher crystalline order more tightly to substrate than said materia being in the amorphous The method of Claim 1 vrherein said substrate chemicall essentially memory material under the fects 19 The of Claim 1 wherein sai physical change structure is substantially a physical without substantial chemical reaction taking place 20 The method of Claim 1 in which the memory material is capable of being reversibly switched between said alternate ture conditions by the different levels of 2 The method of Claim 1 in which the memory material has essentially the chemical alternate 22 The method of Claim in which said memory material is an inorganic 23 The of Claim the memory material an which is capable undergoing a physical change in structure upon the application of energy a The method of Claim 1 i memory material is a The method of Cl i 2 in which said memory material is essentially with said substrate the effects of The of in provided adjacent the layer of memory material thin layer of a catalytic which is the layer of memory of promoting the physical chance from one structure condition to the other structure The method of Claim in which said of memory is disposed on an Intermediary layer of a which essentially with memory The method of 1 which adhesiveness material to said substrate is the application of The method of 1 which the adhesiveness of said memory to said substrate is decreased application The method Claim 1 i which said ferential in the adhesiveness caused by a transformation of the memory from one crystalline state to another crystalline 31 The of Claim 1 in which said memory material in those areas the lower adhesiveness to the substrate is rated substrate by the application f a supporting ial and of adhesive material to the surface of said film of memory material and wherein supporting material the is thereafter removed to produce an image of memory material on said original substrate and a Counter o aterial on said The of Claim 1 in which said substrate is a phlllc material and material is a material so as to produce a offset printing 33 The method Claim 1 which said substrate is an material and which said memory material is a material wherei said material treated with a pound memory material a hydrophillc material so to produce offset printing The method of Claim 1 in which the said substrate is a material which is etchable by an etching fluid and wherein the strate is on an of material which is hot etched by said etching fluid and wherein said f memory material adhering to said substrate used as a resist in an etching step of substrate to produce a 35 The method of comprising the further step of moving said memory material in the high areas of said The method of Claim 1 in which the said substrate is a material which is soluble a solvent and wherein a solvent for said substrate is afte the removal of the memory material in the portio of the lesser whereby the tions of the memory material serve as so that apertures are formed i said substrate by said 37 The method of comprises the further step of removing said memory material said areas by the a for said memory The method of Claim 1 in which the memory material is generall amorphous and in said memory material is upon subjecting it to into a crystalline tion wherein the crystalline particles have a size of more than 1000 The of Claim 1 in which the transformation of the memory material from one physical structure to the other physical structure condition under the effects of the is completed less than one The of Claim 1 in which the transformation of the material from one physical structure condition to the other physical structure condition the effects of the completed in less than one The method of in which the transformati n of the memory material from one physical structure condition to the physical structure condition is effecte in two whereby the first step is an step producing a latent and the second step brings about the actual physical from one cal structure condition to the other physical structure The of l in which the first producing the latent Image the layer of memory material is by energy comprising actinic electromagnetic radiation and the second step producing the transformation is effected by energy comprising The method of Claim 1 in which said energy comprises tromagnetic The method of Claim 1 in which said energy comprises heat whereby the memory material has a transition temperature and the memory material is heated to a temperature its transition temperature The of Claim 1 in which energy comprises f method of 1 in which said comprises a combination of light and The method of Claim 1 which at least part of the energy mechanical W of Claim 1 in which said plastic substrate having a temperature and in which said substrate is heated the interface with the said memory material the application of to a temperature above The method of Claim 1 in which the of the memory material has a thickness of from about Angstroms to about five thousandths of an 50 The method of Claim 1 which the film of the memory material has a thickness from micron to about 5 microns The method of an comprising the step of providing a memory material capable of going a morphological change from state to other morphological state in response to energy applied above a certain and wherein areas layer which have undergone morphological change exhibit a different other areas of said the step selectively subjecting selected areas o layer of material to the effects of energy level above such that a part of the thickness of undergoes morphological change so as to produce a substantial lowering of the autohesion at the betwee portions of layer having undergone said change and portions of layer which have not undergone said and the step of separating said memory material at said and removing said memory so as to duce an image formed by variations In the surface of said 52 The method of Claim in which said c ange produced in memory material a from a ally amorphous condition to ordered 53 The method of which said memory material inorganic The method of Claim 51 wherein energy Is applied at a level above but a time at such that only a part of the thickness of said layer ing the remaining portion of the thickness of said layer 55 The of 51 which the memory material is capable of being switched between said states by the application of levels of The method of which the material is a The of Claim 51 which the layer of ial is disposed on a The method of Claim 51 in the memory in which the at the is substantially lowered by said without a noticeable overt chance the crystalline nature of said memor material bein observable The method of Claim 52 which the crystalline memory formed by the selective application of separat ed removed from said amorphous memory material by the tion of a supporting material and of an adhesive material to the top surface of layer of memory materlai and wherein said supporting material adhesive material are thereafter moved to produce an image of the memory material substrate and a counter of the removed memory material to said line memor 61 The method of Claim 51 which transformation of the memory material from one of states to the other morpholog state the effects of the energy Is plete less than one The method of Claim 51 in which the the memory material of morphological states to the other morphological state under the effects of pleted less than one The method of Claim which the trans n of the memory material from one morphological state to the other morphological state effected two wher y the first is an step producing a latent image and the second step about the actual transformation of said morphological states to the morphological The method of Claim in which the energy i the first step producing the latent image the layer of memory material comprises actinic electromagnetic radiation and the energy applied in the second step the actual transformation comprises heat The od of Claim 51 in which said energy comprises electromagnetic The method of Claim which said energy comprises whereby the memory material has a transition temperature and the memor material heated to a temperature above its transitio temperature The method in which said comprises The method Claim which energy comprises n of light The method of Claim 1 whic the memory a semiconductor material having suitable electrical properties for use electronic so as to nroduce at least one electroni device after of the memory material having lesser 70 The metho of Claim 6 the is applied in a such that a plurality of electro ic devices are produce on a single substrate 71 method 70 i electron devices are by suitable electrical leads and to produce an array of electronic 72 metho of forming an active electrical component co prising the step of on a substrate layer of memory material which can be e between at least two different el trlcally conductive states which further capable of havin selected portions undergo a physical between one sta le condition and stable condition response to applic tion of the memory material b ing normally i one of sai the step of selectively y to said layer a any desired selected portions thereof altering said layer at said desired selected one stabl to the other stable condition in accordance with red patter a d the step of the memory material being i of said conditions and having the lesser adherence to said from and removing said memory material ha ing the lesser so that at least some portion of said memory material forming said electrical 73 The method of Claim 72 which said memory material is disposed on a substrate which is electrically essentially The method of Claim in which said memory material is on a substrate electrical of Claim 72 said memory material disposed on a substrate which is an electrical The of Claim in which the substrate is missive for end in which the of memory a film c The method of Claim in which the memory material highly of which the memory material con tains a ί i The method of Claim in which the memory material a e method of Claim 1 in which the memory material volatile to the tacVy adhesive 1 oh s of roller are evaporated by the application of heat The method of in which the portion of colored material on the said web are fixed to produce a permanent 65 insufficientOCRQuality