KR20010093616A - Method for forming micropattern on substrate by using capillary force - Google Patents

Abstract

PURPOSE: A method for forming micropattern on a substrate is provided by using a capillary phenomenon and a polymer cast to obtain the micropattern without the damage or deformation of a polymer thin film and a substrate. CONSTITUTION: The method comprises the steps of preparing a cast having the pattern structure comprising the intaglio part and the relief part; forming a polymer material(108') with a specific thickness on a substrate(104); contacting the polymer layer on a substrate to the pattern-formed surface of the cast, thereby allowing the polymer material contact with the relief part to be flowed into the empty space(110) of the intaglio part, thereby removing the polymer material contact with the relief part; and removing the cast. Preferably the substrate(104) is heated for allowing the polymer material contact with the intaglio part to be flowed into the empty space(110) after it is contacted with the cast.

Description

Method of forming micro pattern using capillary effect {METHOD FOR FORMING MICROPATTERN ON SUBSTRATE BY USING CAPILLARY FORCE}

The present invention relates to a method for forming a fine pattern on a substrate (for example, silicon substrate, ceramic substrate, metal layer, polymer layer, etc.), more specifically integrated circuit, electronic device, optical device, magnetic device, SAW (Surface Acoustic Wave) The present invention relates to a fine pattern formation method suitable for forming an ultrafine pattern (1 μm or less to several nm) on a substrate by using a capillary effect in a manufacturing process such as a filter.

As is well known, a process of forming a fine pattern on a substrate is performed when manufacturing a semiconductor, electronic, photoelectric, magnetic or display device. There is a photolithography method for forming a fine pattern by using.

The photolithography method is applied to a substrate on which a material to be patterned is laminated (or deposited) on a polymer material having a responsiveness to light (for example, a photoresist, etc.) and designed in a desired pattern. The light is transmitted through the reticle on the polymer material and exposed, and the exposed polymer material is removed through the development process, thereby forming a pattern mask (or an etching mask) having a target pattern on the material to be patterned. Thereafter, by performing an etching process using a pattern mask, the material laminated on the substrate is patterned into a desired pattern.

On the other hand, in the photolithography method as described above, the circuit line width (or pattern line width) is determined by the wavelength of light used in the exposure process. Therefore, in consideration of the current state of the art, it is very difficult to form an ultrafine pattern, for example, an ultrafine pattern having a line width of 100 nm or less, on a substrate using a photolithography process.

In addition, a pattern using a light can form a three-dimensional shape on a large-area substrate through multiple processes, but in order to perform the multiple processes, a pattern formation, an etching process, a cleaning process, etc., is performed every time one pattern is formed. There is a problem that it takes a long time and the process becomes very complicated because it has to be performed, and this problem leads to a problem that the production cost of the product is increased and productivity is lowered.

In addition, in the conventional method of forming a fine pattern on a substrate using light, if the surface of the substrate on which the pattern is to be formed is not flat, there is a problem in that the process is very complicated due to light reflection, diffraction, intensity change, or the like.

Therefore, research and development of new techniques for forming ultra-fine patterns with line widths of 100 nm or less are being actively conducted everywhere, and new techniques include micro-contact printing and imprinting. .

Among the above methods, the micro-contact printing method is a method of obtaining a pattern of a desired shape by imprinting a polymer mold on a substrate, that is, a polymer mold (eg, PDMS mold) having a shape (or pattern) of a desired shape. It is a method of changing the surface state by contacting the substrate, thereby etching or selectively depositing only the desired portion.

However, the conventional fine contact printing method as described above has the advantage of not applying a special external force, while the deformed surface state is permanently maintained unless the surface is scraped off.

Meanwhile, the stamping method forms a fine pattern on the polymer by pressing a mold having a large hardness having a desired shape (pattern) with a physical force, for example, by using a method such as reactive ion etching. It is a method of transferring to a substrate.

However, the above-described imprinting method has a fatal disadvantage that the polymer thin film and the substrate are deformed or broken because the high pressure is used when pressing.

The present invention is to solve the problems of the prior art, it is an object of the present invention to provide a fine pattern forming method that can form a target fine pattern through a simple process using a polymer mold and capillary effect.

The present invention according to one embodiment for achieving the above object is a method of forming a target fine pattern on a substrate by using a mold having an arbitrary pattern structure, wherein the pattern structure comprises an embossed portion and an intaglio portion Preparing a mold having; Forming a polymer material having a predetermined thickness on the substrate; Removing the polymer material facing the embossed part by bringing the prepared polymer material into contact with the pattern forming surface of the mold and introducing the polymer material contacting the embossed part into an empty space of the engraved part; And removing the mold to complete a fine pattern made of a polymer that selectively exposes a portion of the upper portion of the substrate.

According to another aspect of the present invention, there is provided a method for forming a target fine pattern on a substrate by using a mold having an arbitrary pattern structure, wherein the pattern structure includes an embossed portion and an intaglio portion. Preparing a mold having; Forming a thin film material having a predetermined thickness on the substrate; Forming a polymer material having a predetermined thickness over an upper front surface of the thin film material; A polymer pattern having an arbitrary shape by contacting the prepared polymer material with the pattern forming surface of the mold and introducing a polymer material contacting the embossed part into an empty space of the engraved part, thereby removing the polymer material facing the embossed part Forming process; Removing the mold and selectively removing a part of the thin film material by performing an etching process using the polymer pattern as an etching mask; And removing a polymer pattern formed on the substrate to form a fine pattern of a target thin film on the substrate.

1A to 1I are process flowcharts illustrating a process of forming a fine pattern of a thin film on a substrate using a capillary effect according to an embodiment of the present invention;

2A to 2F are process flowcharts schematically illustrating a process of forming a fine pattern of a thin film on a substrate using a capillary effect according to another embodiment of the present invention;

3 is an exemplary view showing an example in which a container in which a fluidizing material is stored is sealed to insert a substrate in which a polymer material is formed in a space that can be sealed with the outside in order to secure fluidity of the polymer material.

<Description of the symbols for the main parts of the drawings>

104, 202: silicon substrate 108 ', 206': polymer material

108, 206: polymer pattern 110, 208: polymer template

110 ', 208': void 114 ', 204': thin film material

114, 204: Fine pattern

The above and other objects and various advantages of the present invention will become more apparent from the preferred embodiments of the present invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, the core technical idea of the present invention is to prepare a polymer mold having a shape to be patterned, and contact the prepared polymer mold on the substrate on which the polymer material is deposited so that the polymer material is formed in an empty space (ie, Capillary phenomena, which are sucked into the intaglio, to form the desired fine pattern.

To this end, in the present invention, when the first polymer material is a fluid polymer material, the capillary phenomenon (that is, the polymer material is sucked into the empty space (negative part) of the polymer mold by bringing the polymer mold into close contact with the polymer material on the substrate) To form a target fine pattern, and secondly, when the polymer material is a polymer material having no fluidity, the polymer mold is brought into contact with the polymer material on the substrate, and then a capillary phenomenon is induced by performing a heat treatment process at a predetermined temperature condition. To form a target fine pattern, and when the third polymer material is a polymer material having no fluidity, it absorbs (or penetrates) a solvent or the like into the polymer material on the substrate to secure fluidity, and then the polymer template is brought into close contact with the polymer material. Induce a capillary phenomenon It provides a technical means to form, through this technical means it is possible to easily achieve the object of the present invention. In this case, in the present invention, not only a polymer mold (PDMS polymer mold) but also an inorganic mold such as SiO ₂ may be used.

Example 1

1A to 1I are process flowcharts illustrating a process of forming a fine pattern of a thin film on a substrate using a capillary effect according to an embodiment of the present invention.

Referring to FIG. 1A, a silicon substrate 104 to form a fine pattern is placed in a container 100 containing a TCE (trichloroethylene) solution 102 and ultrasonically cleaned for a predetermined time (eg, 5 minutes, etc.). Subsequently, the silicon substrate 104 is placed in the container 100 containing the methanol solution 106 and ultrasonically cleaned for a predetermined time (for example, 5 minutes, etc.), and then the silicon substrate 104 is removed from the container 100. ) And wash again with distilled water. Here, a silicon substrate is taken as an example, but the present invention may be applied to not only a silicon substrate but also a ceramic substrate, a metal layer, a polymer layer, and the like.

Next, as shown in FIG. 1C, for example, a polymer material 108 ′ dissolved in toluene on a silicon substrate 104 using a spin coating technique well known in the art may be, for example, approximately 100 nm. Form to thickness.

Meanwhile, in the present invention, when forming a fine pattern on a silicon substrate, a PDMS polymer mold in which a pattern of a desired shape is formed is used. The polymer mold 110 prepared as described above is used as an example, as shown in FIG. Intimate contact with material 108 '. At this time, it is necessary to make contact between the contact surface of the polymer mold and the polymer material 108 'so as not to float. In FIG. 1D, reference numeral 110 ′ denotes an empty space (ie, an intaglio portion) of the patterned polymer template 110.

In this case, when the polymer material 108 ′ formed on the silicon substrate 104 is a polymer material having fluidity, the polymer mold 110 is in close contact with the polymer material 108 ′ within a time in which the flow state of the polymer material is maintained. In this case, a capillary phenomenon in which the polymer material 108 ′ is sucked into the empty space 110 ′ of the polymer mold 110 is induced. As an example, as shown in FIG. 1E, an embossed portion of the polymer mold 110 is formed. Abuts on the silicon substrate 104. To this end, the empty spaces 110 'formed in the polymer mold 110 need to be large enough to accommodate all of the polymer materials 108'.

Unlike the above, when the polymer material 108 ′ formed on the silicon substrate 104 is a polymer material having no fluidity, a process of fluidizing the polymer material 108 ′ is required to cause a capillary phenomenon. To this end, this embodiment presents two methods.

That is, in the first method, the silicon substrate 104 in contact with the polymer mold 110 is put into a heat treatment furnace to perform a heat treatment process, for example, by performing heat treatment at a temperature of about 110 ° C. for about 3 hours. As shown in FIG. 1E, the polymer material 108 ′ is introduced into the empty space 110 ′ in the polymer mold 110.

As is well known, most polymers have a glass-transition temperature, at which temperature the polymer becomes liquid and has fluidity. Therefore, in close contact with the mold having a shape capable of pulling up the polymer, the polymer moves along the shape and moves (inflows) into the empty space in the mold.

Subsequently, in the second method, a silicon substrate 104 having a polymer material 108 ′ having no fluidity is formed before contacting the polymer mold 110, as shown in FIG. 3 as an example. For example, a container 302 in which a solvent or the like is stored is embedded in the space 300 which can be sealed to the outside to absorb the fluidized material evaporated from the container 302 into the polymer material 108 ′ to absorb the polymer material 108 ′. Fluidization (ie, fluidity securing) and the polymer mold 110 is brought into close contact with the fluidized polymer material 108 'to introduce the polymer material 108' into the empty space 110 'of the polymer mold 110. .

At this time, although not shown in detail in Figure 3, in the present embodiment further comprises a heating means for heating the container 302 to heat the container 302 to promote the evaporation of the fluid material through which the fluid material is a polymer By promoting absorption into the material 108 ', the time required to ensure fluidity of the polymeric material 108' may be reduced (i.e., reduced patterning process time).

That is, in this embodiment, the polymer material 108 'is introduced into the empty space 110' of the polymer mold 110 by using capillary action through the various methods as described above.

Next, when the polymer mold 110 is removed while all of the polymer material 108 'is introduced (or moved) into the empty space 110' in the polymer mold 110, as shown in FIG. 1F as an example. The target polymer pattern 108, that is, the fine pattern is formed on the silicon substrate 104.

That is, according to the present embodiment, unlike the above-described conventional technique of forming a fine pattern on the substrate through the micro-contact printing method and the imprinting method, it has a target shape on the substrate through a simple process using a capillary effect It is possible to form a fine pattern of the thin film.

Therefore, a fine pattern of a thin film, such as a metal wiring, may be formed on an arbitrary substrate using a fine pattern (ie, a polymer pattern) obtained through the above-described process.

That is, as an example, as shown in FIG. 1G, the silicon substrate 104 on which the polymer pattern 108 is formed is placed in the deposition reactor 120 containing the electroless plating solution 112 to expose the upper portion of the silicon substrate 104. (I.e., the portion where the polymer pattern does not exist), for example, a thin film 114 'such as aluminum or copper is grown by a desired thickness (Fig. 1H).

Next, the polymer pattern 108 formed on the silicon substrate 104 is removed using a solvent, and then nitrogen is blown to dry, and as an example, as shown in FIG. 1I, the final target on the silicon substrate 104 is used. A fine pattern 114 of a thin film (for example, a thin film of a conductor, an insulator, a semiconductor, or an organic material) is formed.

Therefore, according to the present embodiment, unlike the conventional fine contact printing method and the stamping method, the substrate (for example, silicon substrate, ceramic substrate, On the metal layer, polymer layer, etc.) it can be formed an ultrafine pattern of a desired shape.

Example 2

2A to 2F are process flowcharts schematically illustrating a process of forming a fine pattern of a thin film on a substrate using a capillary effect according to another embodiment of the present invention.

In the method of forming a fine pattern according to the present embodiment, an additional method, that is, a polymer pattern (ie, a fine pattern) is formed on a substrate by using a polymer template and a capillary phenomenon having an arbitrary pattern, and the polymer pattern is not formed. Unlike Example 1, in which a thin pattern is formed by growing a thin film material on a portion of a silicon substrate and then removing a polymer pattern, a damping method, that is, a polymer template and a capillary phenomenon having an arbitrary pattern is used. By forming a polymer pattern on the silicon substrate, and forming a fine pattern of a desired shape on the silicon substrate through an etching process using the formed polymer pattern as an etching mask. It is substantially the same as the processes in 1.

That is, in the method of forming a fine pattern according to the present embodiment, as shown in FIGS. 1A and 1B, the processes of cleaning the silicon substrate are substantially the same as those of the above-described embodiment 1.

Referring to FIG. 2A, a thin film material 204 ′ having a predetermined thickness is formed on the silicon substrate 202 by performing a deposition process, and as shown in FIG. 2B, a thin film material using a spin coating method or the like. A polymer material 206 'of a predetermined thickness is formed over the upper front surface of 204'. Here, as an example, a silicon substrate is taken as an example, but the present invention may be applied to not only a silicon substrate but also a ceramic substrate, a metal layer, a polymer layer, and the like as in Example 1 described above.

Subsequently, the polymer mold 208 is brought into close contact with the polymer material 206 '(in the case where the polymer material has fluidity), or the polymer mold 208 is made of the polymer material 206 similarly to the above-described embodiment 1 or the like. ') After performing a heat treatment process or in contact with the polymer material 206' formed on the silicon substrate 202 to secure the fluidity (for example, solvent, etc.) to secure the fluidity of the polymer mold 208 ), The polymer material 206 'is introduced into the empty space 208' of the polymer mold 208, as shown in FIGS. 2C and 2D.

Next, when the polymer mold 208 is removed while all of the polymer material 206 'is introduced (or moved) into the empty space 208' in the polymer mold 208, as shown in FIG. 2E as an example. The target polymer pattern 206, that is, a fine pattern, is formed on the silicon substrate 202.

In this case, the polymer material 206 ′ may be introduced into the empty space 208 ′ in the polymer mold 208. Alternatively, the polymer material 206 ′ may not be all introduced into the empty space 208 ′, but may be partially disposed on the silicon substrate 202. This may be achieved by controlling the stack thickness of the polymeric material 206 '.

Here, the remaining of the polymer material 206 ′ on the silicon substrate 202 is for controlling the etching rate in an etching process which will be described later, and the control of the etching rate can be easily realized through controlling the thickness of the remaining polymer material. Can be.

Next, the polymer mold 208 is removed by removing all of the polymer material 206 'or selectively introducing (or moving) some of the polymer material 206' into the empty space 208 'in the polymer mold 208. 204 ′), a polymer pattern 206 having an arbitrary shape is formed, and then an etching process using the formed polymer pattern 206 as an etching mask is performed, as shown in FIG. 2E as an example. A portion of 204 ′ is selectively removed to selectively expose a top portion of silicon substrate 202.

Finally, the polymer pattern 206 formed on the silicon substrate 202 is removed using a solvent, and then nitrogen is blown to dry, for example, as shown in FIG. 2F, as a final target on the silicon substrate 202. A fine pattern 204 of a thin film (for example, a thin film of a conductor, an insulator, a semiconductor, or an organic material) is formed.

Therefore, the fine pattern formation method according to the present embodiment can obtain substantially the same effects (or results) as in the above-described first embodiment.

As described above, according to the present invention, unlike the conventional microcontact printing method and the stamping method, by forming a polymer pattern by using a polymer mold (or an inorganic mold) and a capillary phenomenon, the polymer on the substrate through a simple process An additional method (thin film material growth method) or attenuating method (thin film material etching method) using the fine pattern of the polymer formed on the substrate as a thin film material growth inhibiting layer or an etching mask can be formed with high precision. Through the substrate (for example, silicon substrate, ceramic substrate, metal layer, polymer layer, etc.) it is possible to form a fine pattern of a thin film having a target shape.

Claims (23)

In the method of forming a target fine pattern on a substrate using a mold having an arbitrary pattern structure, Preparing a mold having an arbitrary pattern structure having an embossed portion and an engraved portion; Forming a polymer material having a predetermined thickness on the substrate; Removing the polymer material facing the embossed part by bringing the prepared polymer material into contact with the pattern forming surface of the mold and introducing the polymer material contacting the embossed part into an empty space of the engraved part; And A method of forming a fine pattern using a capillary effect comprising removing the mold and completing a fine pattern made of a polymer that selectively exposes a portion of the upper portion of the substrate. The heat treatment process according to claim 1, wherein the pattern forming surface of the mold is brought into contact with the polymer material in order to introduce the polymer material contacting the embossed part into the empty space of the engraved part. Method of forming a fine pattern using the capillary effect, characterized in that it further comprises the step of performing. The method of claim 1, wherein the method further comprises the step of absorbing the fluid material into the polymer material before contacting the mold with the polymer material in order to ensure the fluidity of the polymer material. Fine pattern formation method using. The method of claim 3, wherein the fluid material absorption process promotes absorption of the fluid material into the polymer material by heating the fluid material to promote evaporation thereof. The method of forming a fine pattern using the capillary effect according to claim 4, wherein the flowable material is a solvent. The method of forming a fine pattern using the capillary effect according to any one of claims 1 to 5, wherein the mold is a polymer mold. The method of forming a fine pattern using the capillary effect according to any one of claims 1 to 5, wherein the mold is an inorganic mold. 6. The method of claim 1, wherein the polymer material is formed on the substrate through a spin coating technique. 7. 6. The method of claim 1, wherein the method comprises: Forming a thin film material having a predetermined thickness on the substrate other than the fine pattern of the polymer; And Removing the micropattern of the polymer to form a micropattern of a target thin film on the substrate. 10. The method of claim 9, wherein the fine pattern of the polymer is removed using a solvent. 10. The method of claim 9, wherein the thin film is any one of a conductor, an insulator, a semiconductor, and an organic thin film. In the method of forming a target fine pattern on a substrate using a mold having an arbitrary pattern structure, Preparing a mold having an arbitrary pattern structure having an embossed portion and an engraved portion; Forming a thin film material having a predetermined thickness on the substrate; Forming a polymer material having a predetermined thickness over an upper front surface of the thin film material; A polymer pattern having an arbitrary shape by contacting the prepared polymer material with the pattern forming surface of the mold and introducing a polymer material contacting the embossed part into an empty space of the engraved part, thereby removing the polymer material facing the embossed part Forming process; Removing the mold and selectively removing a part of the thin film material by performing an etching process using the polymer pattern as an etching mask; And Removing the polymer pattern formed on the substrate to form a fine pattern of the target thin film on the substrate using a capillary effect method comprising the capillary effect. The method of claim 12, wherein the method comprises contacting the polymer-formed surface of the mold with the polymer material in order to introduce the polymer material in contact with the embossed part into the empty space of the engraved part, and then performing a heat treatment at a predetermined temperature condition. Method of forming a fine pattern using the capillary effect, characterized in that it further comprises the step of performing. 15. The method of claim 13, wherein the method introduces a portion of the polymer material into the empty space of the mold through the heat treatment process so that a part of the polymer material remains on the upper part of the thin film material. Fine pattern formation method using. The method of claim 14, wherein the polymer material remaining on the thin film material is removed through the etching process. 13. The capillary effect according to claim 12, wherein the method further comprises absorbing the fluid material into the polymer material before contacting the mold with the polymer material in order to ensure fluidity of the polymer material. Fine pattern formation method using. 17. The method of claim 16, wherein the fluid material absorption process promotes absorption of the fluid material into the polymer material by heating the fluid material to promote evaporation thereof. 18. The method of claim 17, wherein the flowable material is a solvent. The method of forming a fine pattern using the capillary effect according to any one of claims 12 to 18, wherein the mold is a polymer mold. The method of forming a fine pattern using the capillary effect according to any one of claims 12 to 18, wherein the mold is an inorganic mold. 19. The method of claim 12, wherein the polymer material is formed on the substrate through a spin coating technique. The method of forming a fine pattern using the capillary effect according to any one of claims 12 to 18, wherein the polymer pattern is removed using a solvent. The method of forming a fine pattern using the capillary effect according to any one of claims 12 to 18, wherein the thin film is any one of a conductor, an insulator, a semiconductor, and an organic thin film.