IL326619A - שקיעה סלקטיבית של חומר דיאלקטרי המכיל אלומיניום על דיאלקטרי מעל מתכת באמצעות אלקינים - Google Patents

שקיעה סלקטיבית של חומר דיאלקטרי המכיל אלומיניום על דיאלקטרי מעל מתכת באמצעות אלקינים

Info

Publication number
IL326619A
IL326619A IL326619A IL32661926A IL326619A IL 326619 A IL326619 A IL 326619A IL 326619 A IL326619 A IL 326619A IL 32661926 A IL32661926 A IL 32661926A IL 326619 A IL326619 A IL 326619A
Authority
IL
Israel
Prior art keywords
alkynes
aluminum
selective deposition
over metal
dielectric material
Prior art date
Application number
IL326619A
Other languages
English (en)
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of IL326619A publication Critical patent/IL326619A/he

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
IL326619A 2023-08-17 2024-08-15 שקיעה סלקטיבית של חומר דיאלקטרי המכיל אלומיניום על דיאלקטרי מעל מתכת באמצעות אלקינים IL326619A (he)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202363520228P 2023-08-17 2023-08-17
US202463560138P 2024-03-01 2024-03-01
PCT/US2024/042568 WO2025038887A1 (en) 2023-08-17 2024-08-15 Selective deposition of aluminum-containing dielectric material on dielectric over metal utilizing alkynes

Publications (1)

Publication Number Publication Date
IL326619A true IL326619A (he) 2026-04-01

Family

ID=92671976

Family Applications (1)

Application Number Title Priority Date Filing Date
IL326619A IL326619A (he) 2023-08-17 2024-08-15 שקיעה סלקטיבית של חומר דיאלקטרי המכיל אלומיניום על דיאלקטרי מעל מתכת באמצעות אלקינים

Country Status (4)

Country Link
CN (1) CN121925983A (he)
IL (1) IL326619A (he)
TW (1) TW202526065A (he)
WO (1) WO2025038887A1 (he)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100675897B1 (ko) * 2005-09-30 2007-02-02 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 형성 방법
KR101279990B1 (ko) * 2011-07-22 2013-07-05 국립대학법인 울산과학기술대학교 산학협력단 그라펜 시트, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 배터리, 태양전지 및 염료감응 태양전지
US20220136106A1 (en) * 2020-10-30 2022-05-05 The Board Of Trustees Of The Leland Stanford Junior University Advanced precursors for selective atomic layer deposition using self-assembled monolayers
CN117999646A (zh) * 2021-07-23 2024-05-07 朗姆研究公司 双重镶嵌互连件中的石墨烯覆盖铜

Also Published As

Publication number Publication date
CN121925983A (zh) 2026-04-24
TW202526065A (zh) 2025-07-01
WO2025038887A1 (en) 2025-02-20

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