IL238371B - A reverse optical proximity correction method - Google Patents

A reverse optical proximity correction method

Info

Publication number
IL238371B
IL238371B IL238371A IL23837115A IL238371B IL 238371 B IL238371 B IL 238371B IL 238371 A IL238371 A IL 238371A IL 23837115 A IL23837115 A IL 23837115A IL 238371 B IL238371 B IL 238371B
Authority
IL
Israel
Prior art keywords
correction method
optical proximity
proximity correction
reverse optical
reverse
Prior art date
Application number
IL238371A
Other languages
Hebrew (he)
Other versions
IL238371A0 (en
Original Assignee
Synopsys Inc
Sidense Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/662,842 external-priority patent/US8735297B2/en
Application filed by Synopsys Inc, Sidense Corp filed Critical Synopsys Inc
Publication of IL238371A0 publication Critical patent/IL238371A0/en
Publication of IL238371B publication Critical patent/IL238371B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
IL238371A 2012-10-29 2015-04-19 A reverse optical proximity correction method IL238371B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/662,842 US8735297B2 (en) 2004-05-06 2012-10-29 Reverse optical proximity correction method
PCT/CA2013/050772 WO2014066997A1 (en) 2012-10-29 2013-10-11 A reverse optical proximity correction method

Publications (2)

Publication Number Publication Date
IL238371A0 IL238371A0 (en) 2015-06-30
IL238371B true IL238371B (en) 2020-02-27

Family

ID=49943719

Family Applications (1)

Application Number Title Priority Date Filing Date
IL238371A IL238371B (en) 2012-10-29 2015-04-19 A reverse optical proximity correction method

Country Status (5)

Country Link
KR (1) KR101700736B1 (en)
CA (1) CA2829970C (en)
IL (1) IL238371B (en)
TW (1) TWI466173B (en)
WO (1) WO2014066997A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10020313B2 (en) * 2014-02-11 2018-07-10 Intel Corporation Antifuse with backfilled terminals
KR102550350B1 (en) 2017-09-08 2023-07-04 에이에스엠엘 네델란즈 비.브이. Training methods for machine learning assisted optical proximity error correction
CN111399334B (en) * 2019-01-03 2021-12-21 无锡华润上华科技有限公司 Mask manufacturing method and mask
TWI718861B (en) * 2020-02-04 2021-02-11 億而得微電子股份有限公司 Low voltage anti-fuse element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3396629B2 (en) * 1998-07-29 2003-04-14 松下電器産業株式会社 Mask pattern correction method
US6613485B2 (en) * 1999-11-18 2003-09-02 United Microelectronics Crop. Optical proximity correction of pattern on photoresist through spacing of sub patterns
TW455925B (en) * 2000-05-15 2001-09-21 Winbond Electronics Corp Method to reduce the optical proximity effect
KR100589041B1 (en) * 2001-03-30 2006-06-13 삼성전자주식회사 Mask and method for forming thereof
US6369422B1 (en) * 2001-05-01 2002-04-09 Atmel Corporation Eeprom cell with asymmetric thin window
JP2006171113A (en) * 2004-12-13 2006-06-29 Toshiba Corp Mask data preparation apparatus, mask data preparation method, exposure mask, method for manufacturing semiconductor device, and mask data preparation program
KR100816194B1 (en) * 2006-08-24 2008-03-21 동부일렉트로닉스 주식회사 Semiconductor devices and photo mask for establishing OPC model

Also Published As

Publication number Publication date
KR20150079871A (en) 2015-07-08
WO2014066997A1 (en) 2014-05-08
CA2829970C (en) 2014-09-09
IL238371A0 (en) 2015-06-30
KR101700736B1 (en) 2017-01-31
TWI466173B (en) 2014-12-21
TW201428817A (en) 2014-07-16
CA2829970A1 (en) 2014-01-16

Similar Documents

Publication Publication Date Title
MY168327A (en) A stent
HK1198734A1 (en) A footgauge
GB2508701B (en) A knee-walker
EP2831249A4 (en) A fermentation method
EP2685306C0 (en) method for manufacturing a spectacle lens
GB201223264D0 (en) A hydrogen-storage-material
GB201218436D0 (en) Correcting lens
IL238371B (en) A reverse optical proximity correction method
ZA201408152B (en) Method for manufacturing a value document
HK1168501A2 (en) A positioning method
EP2700991A4 (en) Optical component
GB2510464B (en) A Footgauge
GB201202964D0 (en) Correction method
HK1211896A1 (en) Method for cold-cutting a lamp
IL239040A0 (en) Method for producing a wavefront-corrected optical arrangement comprising at least two optical elements
EP2909985A4 (en) A technique for extremely high order im correction
GB2505253B (en) A light
GB201216726D0 (en) A method
GB201200751D0 (en) A method
GB2506132B (en) A fuseboard
AU2012905056A0 (en) A method
AU2012901180A0 (en) A method
AU346341S (en) A glass
GB201102114D0 (en) A novel lens
GB201105395D0 (en) A method

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed