IL164300A0 - Method for coating metal surfaces and substrate having a coated metal surface - Google Patents
Method for coating metal surfaces and substrate having a coated metal surfaceInfo
- Publication number
- IL164300A0 IL164300A0 IL16430004A IL16430004A IL164300A0 IL 164300 A0 IL164300 A0 IL 164300A0 IL 16430004 A IL16430004 A IL 16430004A IL 16430004 A IL16430004 A IL 16430004A IL 164300 A0 IL164300 A0 IL 164300A0
- Authority
- IL
- Israel
- Prior art keywords
- substrate
- coating
- coated
- metal surface
- coated metal
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000011248 coating agent Substances 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title 2
- 239000011521 glass Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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- B81C2203/00—Forming microstructural systems
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- C03C2214/00—Nature of the non-vitreous component
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
- Chemical Treatment Of Metals (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE20205830 | 2002-04-15 | ||
DE10222964A DE10222964B4 (de) | 2002-04-15 | 2002-05-23 | Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile |
DE10222609A DE10222609B4 (de) | 2002-04-15 | 2002-05-23 | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
DE10222958A DE10222958B4 (de) | 2002-04-15 | 2002-05-23 | Verfahren zur Herstellung eines organischen elektro-optischen Elements und organisches elektro-optisches Element |
DE10252787A DE10252787A1 (de) | 2002-04-15 | 2002-11-13 | Verfahren zur Herstellung eines Kopierschutzes für eine elektronische Schaltung |
DE10301559A DE10301559A1 (de) | 2002-04-15 | 2003-01-16 | Verfahren zur Herstellung eines Erzeugnisses mit einer strukturierten Oberfläche |
PCT/EP2003/003872 WO2003087423A1 (de) | 2002-04-15 | 2003-04-15 | Verfahren zur beschichtung von metalloberflächen und substrat mit beschichteter metalloberfläche |
Publications (1)
Publication Number | Publication Date |
---|---|
IL164300A0 true IL164300A0 (en) | 2005-12-18 |
Family
ID=29255692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16430004A IL164300A0 (en) | 2002-04-15 | 2004-09-27 | Method for coating metal surfaces and substrate having a coated metal surface |
Country Status (11)
Country | Link |
---|---|
US (1) | US7326446B2 (de) |
EP (1) | EP1495153B1 (de) |
JP (1) | JP2006503976A (de) |
KR (1) | KR100679345B1 (de) |
CN (2) | CN1646722A (de) |
AT (2) | ATE393839T1 (de) |
AU (2) | AU2003245875A1 (de) |
CA (1) | CA2480737A1 (de) |
DE (1) | DE50310646D1 (de) |
IL (1) | IL164300A0 (de) |
WO (1) | WO2003087423A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7282272B2 (en) * | 2003-09-12 | 2007-10-16 | 3M Innovative Properties Company | Polymerizable compositions comprising nanoparticles |
US7074463B2 (en) * | 2003-09-12 | 2006-07-11 | 3M Innovative Properties Company | Durable optical element |
DE102006016373A1 (de) * | 2006-04-05 | 2007-10-11 | Merck Patent Gmbh | Großflächige OLED's mit homogener Lichtemission |
US7465681B2 (en) | 2006-08-25 | 2008-12-16 | Corning Incorporated | Method for producing smooth, dense optical films |
KR100855489B1 (ko) * | 2006-09-12 | 2008-09-01 | 엘지디스플레이 주식회사 | 평판표시소자 및 그 제조방법 |
JP5162179B2 (ja) * | 2007-07-31 | 2013-03-13 | 住友化学株式会社 | 発光素子およびその製造方法並びに照明装置 |
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
KR101594688B1 (ko) | 2014-08-28 | 2016-02-17 | 주식회사 포스코 | 레이저 폴리싱에 의한 전자소자용 금속기판의 표면처리방법 |
CN105870570A (zh) * | 2016-04-01 | 2016-08-17 | 苏州欣天新精密机械有限公司 | 一种复合材料谐振柱的制备方法 |
JP6714884B2 (ja) | 2016-09-13 | 2020-07-01 | Agc株式会社 | 高周波デバイス用ガラス基板と高周波デバイス用回路基板 |
DE102017203180B4 (de) * | 2017-02-27 | 2022-11-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen eines optischen Mikrolinsenarrays und Mikrolinsenarray |
DE102018112069A1 (de) * | 2018-05-18 | 2019-11-21 | Schott Ag | Verwendung eines Flachglases in elektronischen Bauteilen |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2961350A (en) * | 1958-04-28 | 1960-11-22 | Bell Telephone Labor Inc | Glass coating of circuit elements |
US3953652A (en) * | 1973-04-05 | 1976-04-27 | Itek Corporation | Process for coating glass onto polymeric substrates |
US4104418A (en) * | 1975-09-23 | 1978-08-01 | International Business Machines Corporation | Glass layer fabrication |
US4737252A (en) * | 1981-05-18 | 1988-04-12 | Westinghouse Electric Corp. | Method of coating a metallic article of merchandise with a protective transparent film of abrasion-resistance material |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
JPH0691108B2 (ja) * | 1988-03-22 | 1994-11-14 | インタ‐ナシヨナル・ビジネス・マシ‐ンズ・コ‐ポレ‐シヨン | 薄膜電界効果トランジスタの製造方法 |
US4964945A (en) * | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
US5543775A (en) * | 1994-03-03 | 1996-08-06 | Mannesmann Aktiengesellschaft | Thin-film measurement resistor and process for producing same |
US5451548A (en) * | 1994-03-23 | 1995-09-19 | At&T Corp. | Electron beam deposition of gallium oxide thin films using a single high purity crystal source |
US5534312A (en) * | 1994-11-14 | 1996-07-09 | Simon Fraser University | Method for directly depositing metal containing patterned films |
EP0973020B1 (de) * | 1998-07-16 | 2009-06-03 | EPIQ Sensor-Nite N.V. | Elektrischer Temperatur-Sensor mit Mehrfachschicht |
DE10222609B4 (de) | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
DE10222964B4 (de) | 2002-04-15 | 2004-07-08 | Schott Glas | Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile |
DE10222958B4 (de) | 2002-04-15 | 2007-08-16 | Schott Ag | Verfahren zur Herstellung eines organischen elektro-optischen Elements und organisches elektro-optisches Element |
DE10254160B4 (de) * | 2002-11-20 | 2006-07-20 | Infineon Technologies Ag | Transistorarray und damit hergestellte Halbleiterspeicheranordnung |
-
2003
- 2003-04-15 US US10/511,315 patent/US7326446B2/en not_active Expired - Lifetime
- 2003-04-15 AU AU2003245875A patent/AU2003245875A1/en not_active Abandoned
- 2003-04-15 AT AT03737956T patent/ATE393839T1/de not_active IP Right Cessation
- 2003-04-15 DE DE50310646T patent/DE50310646D1/de not_active Expired - Lifetime
- 2003-04-15 AU AU2003245876A patent/AU2003245876A1/en not_active Abandoned
- 2003-04-15 AT AT03737955T patent/ATE411407T1/de not_active IP Right Cessation
- 2003-04-15 KR KR1020047016629A patent/KR100679345B1/ko active IP Right Grant
- 2003-04-15 JP JP2003584356A patent/JP2006503976A/ja not_active Withdrawn
- 2003-04-15 EP EP03737955A patent/EP1495153B1/de not_active Expired - Lifetime
- 2003-04-15 CN CNA038085844A patent/CN1646722A/zh active Pending
- 2003-04-15 CN CNA038085690A patent/CN1647276A/zh active Pending
- 2003-04-15 WO PCT/EP2003/003872 patent/WO2003087423A1/de active Application Filing
- 2003-04-15 CA CA002480737A patent/CA2480737A1/en not_active Abandoned
-
2004
- 2004-09-27 IL IL16430004A patent/IL164300A0/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR100679345B1 (ko) | 2007-02-06 |
EP1495153A1 (de) | 2005-01-12 |
AU2003245876A1 (en) | 2003-10-27 |
US7326446B2 (en) | 2008-02-05 |
WO2003087423A1 (de) | 2003-10-23 |
ATE411407T1 (de) | 2008-10-15 |
DE50310646D1 (de) | 2008-11-27 |
CN1646722A (zh) | 2005-07-27 |
KR20050016346A (ko) | 2005-02-21 |
CN1647276A (zh) | 2005-07-27 |
JP2006503976A (ja) | 2006-02-02 |
AU2003245875A1 (en) | 2003-10-27 |
EP1495153B1 (de) | 2008-10-15 |
US20050175846A1 (en) | 2005-08-11 |
CA2480737A1 (en) | 2003-10-23 |
ATE393839T1 (de) | 2008-05-15 |
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