IL156694A0 - Infrared detector packaged with improved antireflection element - Google Patents

Infrared detector packaged with improved antireflection element

Info

Publication number
IL156694A0
IL156694A0 IL15669401A IL15669401A IL156694A0 IL 156694 A0 IL156694 A0 IL 156694A0 IL 15669401 A IL15669401 A IL 15669401A IL 15669401 A IL15669401 A IL 15669401A IL 156694 A0 IL156694 A0 IL 156694A0
Authority
IL
Israel
Prior art keywords
infrared detector
antireflection element
improved antireflection
packaged
detector packaged
Prior art date
Application number
IL15669401A
Other languages
English (en)
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of IL156694A0 publication Critical patent/IL156694A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
IL15669401A 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element IL156694A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,611 US6627892B2 (en) 2000-12-29 2000-12-29 Infrared detector packaged with improved antireflection element
PCT/US2001/050463 WO2002054499A2 (en) 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element

Publications (1)

Publication Number Publication Date
IL156694A0 true IL156694A0 (en) 2004-01-04

Family

ID=25022765

Family Applications (3)

Application Number Title Priority Date Filing Date
IL15669401A IL156694A0 (en) 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element
IL156694A IL156694A (en) 2000-12-29 2003-06-29 Infrared radiation detector packed with enhanced anti-reflection component
IL175508A IL175508A (en) 2000-12-29 2006-05-09 Method for manufacturing an optical device in the field of infrared waves

Family Applications After (2)

Application Number Title Priority Date Filing Date
IL156694A IL156694A (en) 2000-12-29 2003-06-29 Infrared radiation detector packed with enhanced anti-reflection component
IL175508A IL175508A (en) 2000-12-29 2006-05-09 Method for manufacturing an optical device in the field of infrared waves

Country Status (8)

Country Link
US (2) US6627892B2 (zh)
EP (1) EP1350274A2 (zh)
JP (1) JP2004521329A (zh)
KR (1) KR100853002B1 (zh)
CN (1) CN1291501C (zh)
IL (3) IL156694A0 (zh)
TW (1) TW517396B (zh)
WO (1) WO2002054499A2 (zh)

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US6627892B2 (en) * 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
US7145143B2 (en) * 2002-03-18 2006-12-05 Honeywell International Inc. Tunable sensor
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
EP1703562A1 (de) * 2005-03-17 2006-09-20 ELMOS Semiconductor AG Optischer Empfänger mit einer dem menschlichen Auge nachempfundenen spektralen Empfindlichkeit
CN100374832C (zh) * 2005-05-20 2008-03-12 中国科学院上海技术物理研究所 室温铁电薄膜红外焦平面探测器的吸收层及制备方法
EP1907807B1 (en) * 2005-06-27 2020-09-16 TE Connectivity Sensors Germany GmbH Device for the detection of electromagnetic waves and method for producing such a device
US7745788B2 (en) * 2005-09-23 2010-06-29 Massachusetts Institute Of Technology Optical trapping with a semiconductor
US7564354B2 (en) * 2005-12-29 2009-07-21 International Business Machines Corporation Monitoring device for detecting opening of packaging
US7968986B2 (en) * 2007-05-07 2011-06-28 Innovative Micro Technology Lid structure for microdevice and method of manufacture
KR100971962B1 (ko) 2008-03-07 2010-07-23 주식회사 이노칩테크놀로지 비접촉식 적외선 온도 센서 모듈 및 이의 제조 방법
FR2936868B1 (fr) * 2008-10-07 2011-02-18 Ulis Detecteur thermique a micro-encapsulation.
JP5760297B2 (ja) * 2009-03-06 2015-08-05 日本電気株式会社 熱型赤外線センサ、及び熱型赤外線センサの製造方法
EP2264765A1 (en) 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for an infrared radiation micro device and method for fabricating such housing
CN102040185B (zh) * 2009-10-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 承载晶圆的制作方法和承载晶圆
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
FR2971083B1 (fr) * 2011-02-02 2014-04-25 Ulis Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation
EP2677288A4 (en) * 2011-02-18 2017-12-13 Nec Corporation Infrared detection sensor array and infrared detection device
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
JP5363678B2 (ja) 2011-03-17 2013-12-11 日本碍子株式会社 電磁波放射素子およびその製造方法
JP2013130609A (ja) 2011-12-20 2013-07-04 Ngk Insulators Ltd 電磁波放射素子およびその製造方法
FR2985576B1 (fr) 2012-01-05 2014-10-17 Ulis Detecteur infrarouge comportant un boitier integrant au moins un reseau de diffraction
US9222842B2 (en) 2013-01-07 2015-12-29 Kla-Tencor Corporation High temperature sensor wafer for in-situ measurements in active plasma
EP3543779B1 (en) 2013-01-28 2023-04-05 Samsung Display Co., Ltd. Display device
US9337229B2 (en) * 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
DE102016111253A1 (de) 2016-06-20 2017-12-21 Jenoptik Optical Systems Gmbh Vorrichtung mit einem Infrarotdetektor und einem vorgelagerten Schutzfenster
JP2018124279A (ja) * 2017-02-02 2018-08-09 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
KR102089866B1 (ko) * 2018-09-19 2020-04-23 한국과학기술원 멤스 소자 및 멤스 디바이스의 제조 방법
CN113677965A (zh) 2019-03-11 2021-11-19 菲力尔商业系统公司 微测热辐射计系统和方法
CN112410735B (zh) * 2020-09-29 2022-10-18 天津津航技术物理研究所 一种抗潮解的y2o3基复合薄膜结构及制备方法
EP4194823A1 (en) 2021-12-01 2023-06-14 Meridian Innovation Pte Ltd A cover for an infrared detector and its method of fabrication

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US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4536608A (en) 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
US4826267A (en) * 1987-11-30 1989-05-02 Rockwell International Corporation Spectral filter with integral antireflection coating
US5151917A (en) * 1991-04-18 1992-09-29 Coherent, Inc. Laser resonators employing diffractive optical elements
US5417799A (en) * 1993-09-20 1995-05-23 Hughes Aircraft Company Reactive ion etching of gratings and cross gratings structures
WO1995017014A1 (en) * 1993-12-13 1995-06-22 Honeywell Inc. Integrated silicon vacuum micropackage for infrared devices
JP3724055B2 (ja) * 1996-05-10 2005-12-07 ブラザー工業株式会社 モータ制御装置
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US6627892B2 (en) * 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element

Also Published As

Publication number Publication date
KR100853002B1 (ko) 2008-08-19
KR20040029317A (ko) 2004-04-06
IL156694A (en) 2007-08-19
US6838306B2 (en) 2005-01-04
EP1350274A2 (en) 2003-10-08
WO2002054499A3 (en) 2002-10-17
TW517396B (en) 2003-01-11
CN1493089A (zh) 2004-04-28
IL175508A (en) 2009-11-18
JP2004521329A (ja) 2004-07-15
US20020117623A1 (en) 2002-08-29
IL175508A0 (en) 2006-09-05
US6627892B2 (en) 2003-09-30
CN1291501C (zh) 2006-12-20
WO2002054499A2 (en) 2002-07-11
US20040072384A1 (en) 2004-04-15

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