IL143478A - Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors - Google Patents

Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors

Info

Publication number
IL143478A
IL143478A IL14347899A IL14347899A IL143478A IL 143478 A IL143478 A IL 143478A IL 14347899 A IL14347899 A IL 14347899A IL 14347899 A IL14347899 A IL 14347899A IL 143478 A IL143478 A IL 143478A
Authority
IL
Israel
Prior art keywords
semiconductors
production
monitoring processes
microstructured surfaces
optically monitoring
Prior art date
Application number
IL14347899A
Other languages
English (en)
Other versions
IL143478A0 (en
Original Assignee
Fraunhofer Ges Forschung
Semiconductor 300 Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19922614A external-priority patent/DE19922614A1/de
Application filed by Fraunhofer Ges Forschung, Semiconductor 300 Gmbh & Co Kg filed Critical Fraunhofer Ges Forschung
Publication of IL143478A0 publication Critical patent/IL143478A0/xx
Publication of IL143478A publication Critical patent/IL143478A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Tests Of Electronic Circuits (AREA)
IL14347899A 1998-12-04 1999-12-02 Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors IL143478A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19855983 1998-12-04
DE19922614A DE19922614A1 (de) 1998-12-04 1999-05-17 Verfahren und Vorrichtung zur optischen Kontrolle von Fertigungsprozessen feinstrukturierter Oberflächen in der Halbleiterfertigung
PCT/EP1999/009410 WO2000035002A1 (de) 1998-12-04 1999-12-02 Verfahren und vorrichtung zur optischen kontrolle von fertigungsprozessen feinstrukturierter oberflächen in der halbleiterfertigung

Publications (2)

Publication Number Publication Date
IL143478A0 IL143478A0 (en) 2002-04-21
IL143478A true IL143478A (en) 2005-09-25

Family

ID=26050569

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14347899A IL143478A (en) 1998-12-04 1999-12-02 Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors

Country Status (5)

Country Link
US (1) US7003149B2 (de)
EP (1) EP1145303A1 (de)
JP (1) JP3654630B2 (de)
IL (1) IL143478A (de)
WO (1) WO2000035002A1 (de)

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DE10014816B4 (de) 2000-03-27 2012-12-06 Nawotec Gmbh Verfahren zur Brechzahlbestimmung
US7115858B1 (en) 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
IL139368A (en) 2000-10-30 2006-12-10 Nova Measuring Instr Ltd Process control for microlithography
US7225107B2 (en) * 2001-05-24 2007-05-29 Test Advantage, Inc. Methods and apparatus for data analysis
US6898537B1 (en) 2001-04-27 2005-05-24 Nanometrics Incorporated Measurement of diffracting structures using one-half of the non-zero diffracted orders
US6713753B1 (en) 2001-07-03 2004-03-30 Nanometrics Incorporated Combination of normal and oblique incidence polarimetry for the characterization of gratings
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
DE10146944A1 (de) * 2001-09-24 2003-04-10 Zeiss Carl Jena Gmbh Meßanordnung
DE10146945A1 (de) * 2001-09-24 2003-04-10 Zeiss Carl Jena Gmbh Meßanordnung und Meßverfahren
EP1436670A4 (de) * 2001-10-10 2006-10-25 Accent Optical Tech Inc Bestimmung des fokuszentrums durch querschnittsanalyse
US6560751B1 (en) * 2001-11-06 2003-05-06 Sony Corporation Total overlay feed forward method for determination of specification satisfaction
JP4938219B2 (ja) * 2001-12-19 2012-05-23 ケーエルエー−テンカー コーポレイション 光学分光システムを使用するパラメトリック・プロフィーリング
JP3578144B2 (ja) * 2002-01-16 2004-10-20 住友電気工業株式会社 回折型光学部品の光学特性測定装置及び測定方法
US6562635B1 (en) * 2002-02-26 2003-05-13 Advanced Micro Devices, Inc. Method of controlling metal etch processes, and system for accomplishing same
US6949462B1 (en) 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7321433B2 (en) * 2002-07-12 2008-01-22 Dansk Fundamental Metrologi A/S Method and apparatus for optically measuring the topography of nearly planar periodic structures
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US6867862B2 (en) * 2002-11-20 2005-03-15 Mehrdad Nikoonahad System and method for characterizing three-dimensional structures
WO2004057317A1 (en) * 2002-12-19 2004-07-08 Aminova Vision Technology Aps A method for classifying the quality of a surface
DE10302868B4 (de) * 2003-01-25 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Bestimmung von Strukturparametern einer Oberfläche mit einem lernfähigen System
US7265364B2 (en) * 2004-06-10 2007-09-04 Asml Netherlands B.V. Level sensor for lithographic apparatus
US7310155B1 (en) * 2004-10-04 2007-12-18 Advanced Micro Devices, Inc. Extraction of tool independent line-edge-roughness (LER) measurements using in-line programmed LER and reliability structures
US20070091325A1 (en) * 2005-01-07 2007-04-26 Mehrdad Nikoonahad Multi-channel optical metrology
US11024527B2 (en) 2005-06-18 2021-06-01 Frederick A. Flitsch Methods and apparatus for novel fabricators with Cleanspace
JP2009544228A (ja) * 2006-07-18 2009-12-10 ザ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・ペンシルバニア 偏光を使用した、重複キャストシャドウ成分の分離およびコントラスト強調、ならびに陰影内の標的検出
US8699027B2 (en) * 2007-07-27 2014-04-15 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
TWI462048B (zh) * 2011-08-24 2014-11-21 Inotera Memories Inc 建立蝕刻側寫資料庫的方法
US20140011323A1 (en) * 2012-07-06 2014-01-09 Frederick Flitsch Processes relating to cleanspace fabricators
DE102012022966A1 (de) * 2012-11-21 2014-05-22 Friedrich-Schiller-Universität Jena Verfahren zur Auswertung von durch schmalbandige, kurzwellige, kohärente Laserstrahlung erzeugten Streubildern von Objektiven, insbesondere zur Verwendung in der XUV-Mikroskopie
CN105513985B (zh) * 2014-09-26 2018-08-10 中芯国际集成电路制造(上海)有限公司 光学量测方法
US10067072B2 (en) * 2015-07-10 2018-09-04 Kla-Tencor Corporation Methods and apparatus for speckle suppression in laser dark-field systems
EP3208657A1 (de) * 2016-02-22 2017-08-23 Paul Scherrer Institut Verfahren und system zur hochdurchsatz-defektinspektion unter verwendung des kontrastes im reduzierten räumlichen frequenzbereich
US11867891B2 (en) * 2016-12-22 2024-01-09 Advanced Optical Technologies, Inc. Polarimeter with multiple independent tunable channels and method for material orientation imaging
TWI768092B (zh) * 2017-08-07 2022-06-21 美商克萊譚克公司 用於臨界尺寸量測之檢測導引臨界位點選擇
CN107797391B (zh) * 2017-11-03 2020-04-24 上海集成电路研发中心有限公司 光学邻近校正方法
WO2019217330A1 (en) * 2018-05-07 2019-11-14 Stc. Unm Method and system for in-line optical scatterometry
KR102589004B1 (ko) * 2018-06-18 2023-10-16 삼성전자주식회사 반도체 불량 분석 장치 및 그것의 불량 분석 방법
GB201816526D0 (en) * 2018-10-10 2018-11-28 Univ Nottingham Surface topography sensing

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JPS61169750A (ja) 1985-01-23 1986-07-31 Hitachi Ltd ウエハパターン欠陥検査装置
JPH0610656B2 (ja) 1986-02-27 1994-02-09 株式会社神戸製鋼所 表面欠陥検出装置
US4964726A (en) * 1988-09-27 1990-10-23 General Electric Company Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy
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US5830611A (en) 1992-03-05 1998-11-03 Bishop; Kenneth P. Use of diffracted light from latent images in photoresist for optimizing image contrast
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JPH09191032A (ja) 1996-01-11 1997-07-22 Hitachi Ltd プロセス異常監視方法および装置
JP3586970B2 (ja) 1996-05-27 2004-11-10 ソニー株式会社 微細パターンの検査方法および検査装置
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6366861B1 (en) * 1997-04-25 2002-04-02 Applied Materials, Inc. Method of determining a wafer characteristic using a film thickness monitor
DE19824624A1 (de) 1997-07-23 1999-02-25 Univ Ilmenau Tech Meßanordnung zur optischen Diffraktionsanalyse periodischer Submikrometerstrukturen
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6137570A (en) * 1998-06-30 2000-10-24 Kla-Tencor Corporation System and method for analyzing topological features on a surface

Also Published As

Publication number Publication date
IL143478A0 (en) 2002-04-21
US7003149B2 (en) 2006-02-21
EP1145303A1 (de) 2001-10-17
US20020051564A1 (en) 2002-05-02
JP2002532696A (ja) 2002-10-02
WO2000035002A1 (de) 2000-06-15
JP3654630B2 (ja) 2005-06-02

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Legal Events

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