IL123751A0 - Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions - Google Patents
Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositionsInfo
- Publication number
- IL123751A0 IL123751A0 IL12375196A IL12375196A IL123751A0 IL 123751 A0 IL123751 A0 IL 123751A0 IL 12375196 A IL12375196 A IL 12375196A IL 12375196 A IL12375196 A IL 12375196A IL 123751 A0 IL123751 A0 IL 123751A0
- Authority
- IL
- Israel
- Prior art keywords
- depositions
- titanium
- integrated circuit
- thin layers
- metal stack
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000010936 titanium Substances 0.000 title 1
- 229910052719 titanium Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53615595A | 1995-09-29 | 1995-09-29 | |
| PCT/US1996/015351 WO1997012399A1 (en) | 1995-09-29 | 1996-09-25 | Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL123751A0 true IL123751A0 (en) | 1998-10-30 |
Family
ID=24137384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL12375196A IL123751A0 (en) | 1995-09-29 | 1996-09-25 | Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0852809A4 (en) |
| JP (1) | JPH11511593A (en) |
| KR (1) | KR19990063767A (en) |
| CN (1) | CN1198252A (en) |
| AU (1) | AU7245396A (en) |
| IL (1) | IL123751A0 (en) |
| WO (1) | WO1997012399A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19903195B4 (en) | 1999-01-27 | 2005-05-19 | Infineon Technologies Ag | Method for improving the quality of metal interconnects on semiconductor structures |
| US6492281B1 (en) * | 2000-09-22 | 2002-12-10 | Advanced Micro Devices, Inc. | Method of fabricating conductor structures with metal comb bridging avoidance |
| DE10053915C2 (en) * | 2000-10-31 | 2002-11-14 | Infineon Technologies Ag | Manufacturing process for an integrated circuit |
| CN1324675C (en) * | 2003-04-02 | 2007-07-04 | 旺宏电子股份有限公司 | Structure and method for preventing micro image processing aligning mistake |
| CN1316613C (en) * | 2003-06-19 | 2007-05-16 | 旺宏电子股份有限公司 | Sandwich antireflection structural metal layer of semiconductor and making process thereof |
| KR100650904B1 (en) * | 2005-12-29 | 2006-11-28 | 동부일렉트로닉스 주식회사 | Method of forming aluminum line |
| CN104221130B (en) | 2012-02-24 | 2018-04-24 | 天工方案公司 | Improved structure relevant with the copper-connection of compound semiconductor, apparatus and method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4673623A (en) * | 1985-05-06 | 1987-06-16 | The Board Of Trustees Of The Leland Stanford Junior University | Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects |
| US5231053A (en) * | 1990-12-27 | 1993-07-27 | Intel Corporation | Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5470790A (en) * | 1994-10-17 | 1995-11-28 | Intel Corporation | Via hole profile and method of fabrication |
| US6285082B1 (en) * | 1995-01-03 | 2001-09-04 | International Business Machines Corporation | Soft metal conductor |
| US5747879A (en) * | 1995-09-29 | 1998-05-05 | Intel Corporation | Interface between titanium and aluminum-alloy in metal stack for integrated circuit |
-
1996
- 1996-09-25 AU AU72453/96A patent/AU7245396A/en not_active Abandoned
- 1996-09-25 JP JP9512195A patent/JPH11511593A/en active Pending
- 1996-09-25 WO PCT/US1996/015351 patent/WO1997012399A1/en not_active Application Discontinuation
- 1996-09-25 CN CN96197259A patent/CN1198252A/en active Pending
- 1996-09-25 IL IL12375196A patent/IL123751A0/en unknown
- 1996-09-25 KR KR1019980702234A patent/KR19990063767A/en not_active Application Discontinuation
- 1996-09-25 EP EP96933891A patent/EP0852809A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11511593A (en) | 1999-10-05 |
| EP0852809A4 (en) | 1999-09-15 |
| KR19990063767A (en) | 1999-07-26 |
| CN1198252A (en) | 1998-11-04 |
| AU7245396A (en) | 1997-04-17 |
| EP0852809A1 (en) | 1998-07-15 |
| WO1997012399A1 (en) | 1997-04-03 |
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