IL105952A - Controlled semiconductor capacitors - Google Patents
Controlled semiconductor capacitorsInfo
- Publication number
- IL105952A IL105952A IL10595293A IL10595293A IL105952A IL 105952 A IL105952 A IL 105952A IL 10595293 A IL10595293 A IL 10595293A IL 10595293 A IL10595293 A IL 10595293A IL 105952 A IL105952 A IL 105952A
- Authority
- IL
- Israel
- Prior art keywords
- controlled semiconductor
- semiconductor capacitors
- capacitors
- controlled
- semiconductor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Amplifiers (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL10595293A IL105952A (en) | 1993-06-08 | 1993-06-08 | Controlled semiconductor capacitors |
US08/381,973 US5680073A (en) | 1993-06-08 | 1994-05-31 | Controlled semiconductor capacitors |
AU70493/94A AU7049394A (en) | 1993-06-08 | 1994-05-31 | Controlled semiconductor capacitors |
PCT/US1994/006144 WO1994029960A1 (en) | 1993-06-08 | 1994-05-31 | Controlled semiconductor capacitors |
EP94919307A EP0662269A4 (en) | 1993-06-08 | 1994-05-31 | Controlled semiconductor capacitors. |
JP7501907A JPH08504061A (en) | 1993-06-08 | 1994-05-31 | Controlled semiconductor capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL10595293A IL105952A (en) | 1993-06-08 | 1993-06-08 | Controlled semiconductor capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
IL105952A0 IL105952A0 (en) | 1993-10-20 |
IL105952A true IL105952A (en) | 1997-02-18 |
Family
ID=11064919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL10595293A IL105952A (en) | 1993-06-08 | 1993-06-08 | Controlled semiconductor capacitors |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0662269A4 (en) |
JP (1) | JPH08504061A (en) |
AU (1) | AU7049394A (en) |
IL (1) | IL105952A (en) |
WO (1) | WO1994029960A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10323980B2 (en) | 2013-03-29 | 2019-06-18 | Rensselaer Polytechnic Institute | Tunable photocapacitive optical radiation sensor enabled radio transmitter and applications thereof |
DE102016013540A1 (en) * | 2016-11-14 | 2018-05-17 | 3 - 5 Power Electronics GmbH | III-V semiconductor diode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3508140A (en) * | 1967-05-17 | 1970-04-21 | Honeywell Inc | Symmetrical voltage limiting device apparatus |
US3553658A (en) * | 1968-04-15 | 1971-01-05 | Ibm | Active storage array having diodes for storage elements |
US3540011A (en) * | 1968-09-06 | 1970-11-10 | Philips Corp | All solid state radiation imagers |
CA1007308A (en) * | 1972-12-29 | 1977-03-22 | Jack A. Dorler | Cross-coupled capacitor for ac performance tuning |
US4045248A (en) * | 1973-06-26 | 1977-08-30 | U.S. Philips Corporation | Making Schottky barrier devices |
JPS5764968A (en) * | 1980-10-09 | 1982-04-20 | Ricoh Co Ltd | Image sensor |
JPS59181317A (en) * | 1983-03-31 | 1984-10-15 | Sumitomo Electric Ind Ltd | Optical modulating element |
US4839709A (en) * | 1985-07-12 | 1989-06-13 | Hewlett-Packard Company | Detector and mixer diode operative at zero bias voltage |
US4948989A (en) * | 1989-01-31 | 1990-08-14 | Science Applications International Corporation | Radiation-hardened temperature-compensated voltage reference |
JPH0349401A (en) * | 1989-07-18 | 1991-03-04 | Mitsubishi Electric Corp | Microwave element |
US5320971A (en) * | 1990-10-05 | 1994-06-14 | Texas Instruments Incorporated | Process for obtaining high barrier Schottky diode and local interconnect |
US5159296A (en) * | 1991-03-28 | 1992-10-27 | Texas Instruments Incorporated | Four port monolithic gaas pin diode switch |
-
1993
- 1993-06-08 IL IL10595293A patent/IL105952A/en not_active IP Right Cessation
-
1994
- 1994-05-31 WO PCT/US1994/006144 patent/WO1994029960A1/en not_active Application Discontinuation
- 1994-05-31 AU AU70493/94A patent/AU7049394A/en not_active Abandoned
- 1994-05-31 JP JP7501907A patent/JPH08504061A/en not_active Ceased
- 1994-05-31 EP EP94919307A patent/EP0662269A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0662269A1 (en) | 1995-07-12 |
WO1994029960A1 (en) | 1994-12-22 |
EP0662269A4 (en) | 1997-11-26 |
JPH08504061A (en) | 1996-04-30 |
AU7049394A (en) | 1995-01-03 |
IL105952A0 (en) | 1993-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |