IL105952A - Controlled semiconductor capacitors - Google Patents

Controlled semiconductor capacitors

Info

Publication number
IL105952A
IL105952A IL10595293A IL10595293A IL105952A IL 105952 A IL105952 A IL 105952A IL 10595293 A IL10595293 A IL 10595293A IL 10595293 A IL10595293 A IL 10595293A IL 105952 A IL105952 A IL 105952A
Authority
IL
Israel
Prior art keywords
controlled semiconductor
semiconductor capacitors
capacitors
controlled
semiconductor
Prior art date
Application number
IL10595293A
Other versions
IL105952A0 (en
Inventor
German Ashkinazi
Boris Meyler
Menachem Nathan
Leonid Zolotarevski
Olga Zolotarevski
Original Assignee
Univ Ramot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Ramot filed Critical Univ Ramot
Priority to IL10595293A priority Critical patent/IL105952A/en
Publication of IL105952A0 publication Critical patent/IL105952A0/en
Priority to US08/381,973 priority patent/US5680073A/en
Priority to AU70493/94A priority patent/AU7049394A/en
Priority to PCT/US1994/006144 priority patent/WO1994029960A1/en
Priority to EP94919307A priority patent/EP0662269A4/en
Priority to JP7501907A priority patent/JPH08504061A/en
Publication of IL105952A publication Critical patent/IL105952A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1446Devices controlled by radiation in a repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/872Schottky diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Amplifiers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
IL10595293A 1993-06-08 1993-06-08 Controlled semiconductor capacitors IL105952A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IL10595293A IL105952A (en) 1993-06-08 1993-06-08 Controlled semiconductor capacitors
US08/381,973 US5680073A (en) 1993-06-08 1994-05-31 Controlled semiconductor capacitors
AU70493/94A AU7049394A (en) 1993-06-08 1994-05-31 Controlled semiconductor capacitors
PCT/US1994/006144 WO1994029960A1 (en) 1993-06-08 1994-05-31 Controlled semiconductor capacitors
EP94919307A EP0662269A4 (en) 1993-06-08 1994-05-31 Controlled semiconductor capacitors.
JP7501907A JPH08504061A (en) 1993-06-08 1994-05-31 Controlled semiconductor capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL10595293A IL105952A (en) 1993-06-08 1993-06-08 Controlled semiconductor capacitors

Publications (2)

Publication Number Publication Date
IL105952A0 IL105952A0 (en) 1993-10-20
IL105952A true IL105952A (en) 1997-02-18

Family

ID=11064919

Family Applications (1)

Application Number Title Priority Date Filing Date
IL10595293A IL105952A (en) 1993-06-08 1993-06-08 Controlled semiconductor capacitors

Country Status (5)

Country Link
EP (1) EP0662269A4 (en)
JP (1) JPH08504061A (en)
AU (1) AU7049394A (en)
IL (1) IL105952A (en)
WO (1) WO1994029960A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10323980B2 (en) 2013-03-29 2019-06-18 Rensselaer Polytechnic Institute Tunable photocapacitive optical radiation sensor enabled radio transmitter and applications thereof
DE102016013540A1 (en) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH III-V semiconductor diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508140A (en) * 1967-05-17 1970-04-21 Honeywell Inc Symmetrical voltage limiting device apparatus
US3553658A (en) * 1968-04-15 1971-01-05 Ibm Active storage array having diodes for storage elements
US3540011A (en) * 1968-09-06 1970-11-10 Philips Corp All solid state radiation imagers
CA1007308A (en) * 1972-12-29 1977-03-22 Jack A. Dorler Cross-coupled capacitor for ac performance tuning
US4045248A (en) * 1973-06-26 1977-08-30 U.S. Philips Corporation Making Schottky barrier devices
JPS5764968A (en) * 1980-10-09 1982-04-20 Ricoh Co Ltd Image sensor
JPS59181317A (en) * 1983-03-31 1984-10-15 Sumitomo Electric Ind Ltd Optical modulating element
US4839709A (en) * 1985-07-12 1989-06-13 Hewlett-Packard Company Detector and mixer diode operative at zero bias voltage
US4948989A (en) * 1989-01-31 1990-08-14 Science Applications International Corporation Radiation-hardened temperature-compensated voltage reference
JPH0349401A (en) * 1989-07-18 1991-03-04 Mitsubishi Electric Corp Microwave element
US5320971A (en) * 1990-10-05 1994-06-14 Texas Instruments Incorporated Process for obtaining high barrier Schottky diode and local interconnect
US5159296A (en) * 1991-03-28 1992-10-27 Texas Instruments Incorporated Four port monolithic gaas pin diode switch

Also Published As

Publication number Publication date
EP0662269A1 (en) 1995-07-12
WO1994029960A1 (en) 1994-12-22
EP0662269A4 (en) 1997-11-26
JPH08504061A (en) 1996-04-30
AU7049394A (en) 1995-01-03
IL105952A0 (en) 1993-10-20

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Legal Events

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MM9K Patent not in force due to non-payment of renewal fees